Abstract:The emerging two‐dimensional (2D) tellurium (tellurene) has attracted much attention due to its high carrier transportability and prominent air stability. Micrometer‐scale bilayer (BL) tellurene field‐effect transistors (FETs) are successfully fabricated with a large on/off current ratio of about 105. Here, the transport properties of both the n‐ and p‐type double‐gated sub‐10 nm BL tellurene metal‐oxide‐semiconductor FETs (MOSFETs) are systematically explored by using ab initio quantum transport simulation. The optimized 5, 7, and 9 nm gate‐length p‐type x‐ and y‐directed BL tellurene MOSFETs with a proper underlap and negative capacitance dielectric can meet or nearly meet the on‐state current, delay time, power dissipation, and energy‐delay product requirements of the International Technology Roadmap for Semiconductors for the 2022–2028 horizons for high‐performance applications. This renders BL tellurene to join the air‐stable channel candidate for the p‐type sub‐10 nm transistors. The performance of the n‐ and p‐type sub‐10 nm double‐gated air‐stable bilayer (BL) tellurene metal‐oxide‐semiconductor field‐effect transistors along the x and y directions is explored for the first time by using ab initio quantum transport calculations. With the help of the underlap and negative capacitance dielectric layers, the air‐stable BL tellurene possesses an application prospect in the p‐type sub‐10 nm high‐performance transistors.

Charge Noise in Low Schottky Barrier Multilayer Tellurium Field-Effect Transistors

Schottky barrier lowering due to interface states in 2D heterophase devices

Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene

Bilayer Tellurene–metal Interfaces

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Assessing the role of quantum effects in 2D heterophase MoTe$_2$ field effect transistors

Topological phase change transistors based on tellurium Weyl semiconductor

Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

Weyl Node-Participated Magnetoresistance and Nonreciprocal Transport in Two-Dimensional Tellurene Nanostructures

Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors

Charge tunable structural phase transitions in few-layer tellurium: a step toward building mono-elemental devices

Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Performance potential of transistors based on tellurium nanowire arrays: A quantum transport study

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe$_2$ and 2H-NbSe$_2$

Field-effect transistors made from solution-grown two-dimensional tellurene

Monolayer 2D semiconducting tellurides for high-mobility electronics