Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene

Gang Qiu,Yixiu Wang,Yifan Nie,Yongping Zheng,Kyeongjae Cho,Wenzhuo Wu,Peide D. Ye

DOI: https://doi.org/10.1021/acs.nanolett.8b02368

2018-06-21

Abstract:Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hosted in high mobility 2DEG with large external magnetic field at low temperature. Two-dimensional van der Waals materials, such as graphene and black phosphorus, are considered interesting material systems to study quantum transport, because it could unveil unique host material properties due to its easy accessibility of monolayer or few-layer thin films at 2D quantum limit. Here for the first time, we report direct observation of QHE in a novel low-dimensional material system: tellurene.High-quality 2D tellurene thin films were acquired from recently reported hydrothermal method with high hole mobility of nearly 3,000 cm2/Vs at low temperatures, which allows the observation of well-developed Shubnikov-de-Haas (SdH) oscillations and QHE. A four-fold degeneracy of Landau levels in SdH oscillations and QHE was revealed. Quantum oscillations were investigated under different gate biases, tilted magnetic fields and various temperatures, and the results manifest the inherent information of the electronic structure of Te. Anomalies in both temperature-dependent oscillation amplitudes and transport characteristics were observed which are ascribed to the interplay between Zeeman effect and spin-orbit coupling as depicted by the density functional theory (DFT) calculations.

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The paper mainly addresses the following key issues:

1. **First observation of the Quantum Hall Effect (QHE) in Tellurene**: By preparing high-quality 2D tellurene thin films, researchers directly observed the quantum Hall effect in tellurene for the first time and revealed its fourfold degenerate Landau level structure.

2. **Exploration of the electronic structure of tellurene**: Through the study of Shubnikov-de Haas oscillations, the electronic structure characteristics of tellurene were investigated under different gate voltages, tilted magnetic fields, and temperatures. The results show that tellurene has a unique electronic structure, including the fourfold degeneracy of Landau levels, which is jointly caused by the spin degeneracy factor (gs=2) and the valley degeneracy factor (gv=2).

3. **Changes in electronic properties under quantum confinement effects**: The study examined the anomalous changes in effective mass in tellurene under strong magnetic fields due to the interaction between spin-orbit coupling and the Zeeman effect. This change leads to abnormal transport characteristics of tellurene under low temperature and strong magnetic field conditions.

4. **Demonstration of the application potential of new 2D materials**: Experiments verified that tellurene, as a new 2D material, has great potential in achieving high-quality electronic transport properties under strong quantum confinement conditions. This lays the foundation for using tellurene in future explorations of more exotic topological phenomena.

In summary, this study not only achieved the first observation of the quantum Hall effect in tellurene but also deeply explored the evolution of the electronic structure of tellurene under strong magnetic fields and its impact on transport properties. This provides an important basis for further exploration of the physical properties and potential applications of tellurene.