Abstract:A novel dual-direction silicon-controlled rectifier (DDSCR) embedded with segmental and cross-bridge topology, which is named DDSCRESCT, is proposed and optimized for electrostatic discharge (ESD) protection. By segmenting <inline-formula> <tex-math notation="LaTeX">$\text{N}^{+}$ </tex-math></inline-formula> bridges and inserting a <inline-formula> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> bridge in DDSCR, the trigger voltage of the DDSCRESCT decreases to 10.3 V, which is attributed to the multiple avalanche breakdown effects. By embedding a floating N-type well in DDSCR, the holding voltage of the DDSCRESCT increases to 7.8 V, due to the low current gain of the parasitic bipolar junction transistors. Compared to DDSCR, the leakage current of the DDSCRESCT decreases about one order of magnitude and achieves a large failure current (<inline-formula> <tex-math notation="LaTeX">${I}_{t{2}}$ </tex-math></inline-formula>) of 3.6 A, resulting from the segmental and cross-bridge topology design. By optimizing the length of the <inline-formula> <tex-math notation="LaTeX">$\text{N}^{+}$ </tex-math></inline-formula> segmental topology and the width of the <inline-formula> <tex-math notation="LaTeX">$\text{P}^{+}$ </tex-math></inline-formula> implanted bridge across the P-type well, the DDSCRESCT exhibits a good clamping ability and a decreased turn-on resistance of <inline-formula> <tex-math notation="LaTeX">$2.1 \Omega $ </tex-math></inline-formula>, resulting in a further <inline-formula> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula>16.2% increase of <inline-formula> <tex-math notation="LaTeX">${I}_{t{2}}$ </tex-math></inline-formula>. The human body model (HBM) test of the DDSCRESCT with a finger width of <inline-formula> <tex-math notation="LaTeX">$100 \mu \text{m}$ </tex-math></inline-formula> can reach 4 kV due to the optimized segmental and cross-bridge topology design, which also offers great potential in providing high-voltage ESD protection.

A Novel Segmented LDMOS-SCR Structure With 8-kV HBM ESD Robustness in CMOS Analog Multiplexer

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Robust and area-efficient nLDMOS-SCR with waffle layout structure for high-voltage ESD protection

A Modified LDMOS Device with Improved ESD Protection Performance

Improved LDMOS for ESD Protection of High Voltage BCD Process

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

A Novel Dual-Directional DTSCR in Twin-Well Process for Ultra-Low-voltage ESD Protection

A Novel SCR-LDMOS for High Voltage ESD Protection.

A Robust Polysilicon-Assisted SCR in ESD Protection Application

Segmented SCR for High Voltage ESD Protection

A Novel Dual-Direction SCR Embedded With Segmental and Cross-Bridge Topology for High-Voltage ESD Protection

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

Investigation on MOS shunt LVTSCR for ESD application

LDMOS–SCR: a Replacement for LDMOS with High ESD Self-Protection Ability for HV Application

Design of Dual-Directional SCR Structure With High Holding Voltage and Low Dynamic Resistance for High Voltage ESD Protection

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process