Programmable Dynamics of Exchange‐Biased Domain Wall via Spin‐Current‐Induced Antiferromagnet Switching
Hyun‐Joong Kim,Soong‐Geun Je,Kyoung‐Woong Moon,Won‐Chang Choi,Seungmo Yang,Changsoo Kim,Bao Xuan Tran,Chanyong Hwang,Jung‐Il Hong
DOI: https://doi.org/10.1002/advs.202100908
IF: 15.1
2021-07-15
Advanced Science
Abstract:<p>Magnetic domain wall (DW) motion in perpendicularly magnetized materials is drawing increased attention due to the prospect of new type of information storage devices, such as racetrack memory. To augment the functionalities of DW motion-based devices, it is essential to improve controllability over the DW motion. Other than electric current, which is known to induce unidirectional shifting of a train of DWs, an application of in-plane magnetic field also enables the control of DW dynamics by rotating the DW magnetization and consequently modulating the inherited chiral DW structure. Applying an external bias field, however, is not a viable approach for the miniaturization of the devices as the external field acts globally. Here, the programmable exchange-coupled DW motion in the antiferromagnet (AFM)/ferromagnet (FM) system is demonstrated, where the role of an external in-plane field is replaced by the exchange bias field from AFM layer, enabling the external field-free modulations of DW motions. Interestingly, the direction of the exchange bias field can also be reconfigured by simply injecting spin currents through the device, enabling electrical and programmable operations of the device. Furthermore, the result inspires a prototype DW motion-based device based on the AFM/FM heterostructure, that could be easily integrated in logic devices.</p>
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry