Abstract:Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile memory and logic technologies in which domain walls, rather than domains, serve as an active element. Especially interesting are charged domain walls in ferroelectric structures, which have subnanometre thicknesses and exhibit non-trivial electronic and transport properties that are useful for various nanoelectronics applications(1-3). The ability to deterministically create and manipulate charged domain walls is essential to realize their functional properties in electronic devices. Here we report a strategy for the controllable creation and manipulation of in-plane charged domain walls in BiFeO3 ferroelectric films a few nanometres thick. By using an in situ biasing technique within a scanning transmission electron microscope, an unconventional layer-by-layer switching mechanism is detected in which ferroelectric domain growth occurs in the direction parallel to an applied electric field. Based on atomically resolved electron energy-loss spectroscopy, in situ charge mapping by in-line electron holography and theoretical calculations, we show that oxygen vacancies accumulating at the charged domain walls are responsible for the domain-wall stability and motion. Voltage control of the in-plane domain-wall position within a BiFeO3 film gives rise to multiple non-volatile resistance states, thus demonstrating the key functional property of being a memristor a few unit cells thick. These results promote a better understanding of ferroelectric switching behaviour and provide a new strategy for creating unit-cell-scale devices.

Current and field stimulated motion of domain wall in narrow permalloy stripe

Current-driven Domain Wall Dynamics And Its Electric Signature In Ferromagnetic Nanowires

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Electric Field Control of Multiferroic Domain Wall Motion

Current Polarity-Dependent Manipulation of Antiferromagnetic Domains

Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction

Current-Induced Domain Wall Motion in a Compensated Ferrimagnet

Current-induced domain wall motion in compensated ferrimagnet

Coherent magnon-induced domain-wall motion in a magnetic insulator channel

Strain-tunable Magnetism at Oxide Domain Walls

Efficient domain wall motion driven by the out-of-plane spin polarization

All-Linear Multistate Magnetic Switching Induced by Electrical Current

Nanoscale domain wall devices with magnetic tunnel junction read and write

Magnetic memory and current amplification devices using moving domain walls

Current-Induced Domain Wall Motion in Permalloy Nanowires with A Rectangular Cross-Section

Conduction control at ferroic domain walls via external stimuli.

Current-Driven Domain Wall Motion in Curved Ferrimagnetic Strips Above and Below the Angular Momentum Compensation

Magnetic Domain-Wall Motion Twisted by Nanoscale Probe-Induced Spin Transfer

Charged ferroelectric domain walls for deterministic a.c. signal control

Current-controlled Propagation of Spin Waves in Antiparallel, Coupled Domains

Programmable Dynamics of Exchange‐Biased Domain Wall via Spin‐Current‐Induced Antiferromagnet Switching