Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure

Yuanjun Yang,Zhenlin Luo,Shutong Wang,Wenyu Huang,Guilin Wang,Cangmin Wang,Yingxue Yao,Hongju Li,Zhili Wang,Jingtian Zhou,Yongqi Dong,Yong Guan,Yangchao Tian,Ce Feng,Yonggang Zhao,Chen Gao,Gang Xiao

DOI: https://doi.org/10.1016/j.isci.2021.102734

IF: 5.8

2021-07-01

iScience

Abstract:Electric-field (E-field) control of magnetic switching provides an energy-efficient means to toggle the magnetic states in spintronic devices. The angular tunneling magnetoresistance (TMR) of an magnetic tunnel junction (MTJ)/PMN-PT magnetoelectronic hybrid indicates that the angle-dependent switching fields of the free layer can decrease significantly subject to the application of an E-field. In particular, the switching field along the major axis is reduced by 59% from 28.0 to 11.5 Oe as the E-field increases from 0 to 6 kV/cm, while the TMR ratio remains intact. The switching boundary angle decreases (increases) for the parallel (antiparallel) to antiparallel (parallel) state switch, resulting in a shrunk switching window size. The non-volatile and reversible 180° magnetization switching is demonstrated by using E-fields with a smaller magnetic field bias as low as 11.5 Oe. The angular magnetic switching originates from competition among the E-field-induced magnetoelastic anisotropy, magnetic shape anisotropy, and Zeeman energy, which is confirmed by micromagnetic simulations.

multidisciplinary sciences

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve non - volatile magnetization reversal in magnetic tunnel junction (MTJ)/ferroelectric (FE) hybrid structures through electric - field assistance. Specifically, the authors explore how to use electric fields to control the magnetization state switching of magnetic materials in order to achieve low - energy - consumption and stable magnetic random - access memory (MRAM) technology. In traditional MRAMs, the switching of magnetization states usually requires large currents or magnetic fields, which will lead to high energy consumption and poor durability. By introducing electric - field control, the magnetic field strength required for switching can be significantly reduced, thereby improving the energy efficiency and stability of the device.

The key findings of the paper include:
1. **Electric - field - controlled angle - dependent magnetization switching**: The research shows that when an electric field is applied, the angle - dependent switching field of the magnetic free layer is significantly reduced. In particular, the switching field along the principal axis direction is reduced from 28.0 Oe to 11.5 Oe, a reduction of 59%.
2. **Non - volatile and reversible 180° magnetization reversal**: By applying an electric field, non - volatile and reversible 180° magnetization reversal can be achieved under a small magnetic field bias.
3. **Mechanism of magnetization switching**: Magnetization switching originates from the competition among electric - field - induced magnetoelastic anisotropy, shape anisotropy and Zeeman energy. Micromagnetic simulations confirm this.

These findings provide new ways for the development of efficient, low - power - consumption spintronic devices, especially in the field of magnetic random - access memory (MRAM).