Abstract:In recent years, materials with metal-to-insulator phase transitions have attracted great attention due to their property variations before and after the transition. As nearly all good thermoelectric materials are small band gap semiconductors, a metal-insulator transition makes a profound difference in thermoelectric performance. Revealing the microscopic reasons for these variations is critical to understanding the structure-property relation in these materials. MgAgSb is an important thermoelectric material around room temperature, due to its high zT value and intrinsic low lattice thermal conductivity in the semiconducting alpha-phase. However, the thermoelectric properties of mid-temperature beta-phase MgAgSb significantly deteriorate because the beta-phase has no band gap. In this work, we reveal that the Ag atomic rearrangement between the two phases is the major reason responsible for the metal-insulator transition and deterioration of thermoelectric properties. In MgAgSb, there are strong interactions between Mg and Sb, as well as Ag and Sb, leading to bands of mixed character around the Fermi Level. In alpha-MgAgSb, the Mg-Sb bands in the conduction band minimum separate well with the bands around the valence band maximum, and form a finite band gap. Due to the Ag rearrangement and the formation of a quasi two-dimensional structure of beta-MgAgSb, the interactions among Mg-Ag-Sb atoms form multiple bands crossing the Fermi level, and realize the "two-dimensional metallization ". In addition, the structural variations in the beta-phase results in higher phonon velocities and removal of additional low-frequency optical phonons as only shown in the alpha-phase, both of which leading to the relatively high kappa L of the beta-phase. Our work provides new perspectives for the performance research and application of materials with metal-insulator phase transitions.

Revealing the intrinsic p-to-n transition mechanism on Mg 3 Sb 2 through extra Mg

Revealing the temperature-driven Lifshitz transition in p -type Mg3Sb2-based thermoelectric materials

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

Realizing Excellent Structural and Thermoelectric Performance in Mg 3 Sb 2 -Based Alloys by Manipulating Mg Intrinsic Migration Kinetics with Interstitial Ni Doping

Electronic structure and transport property of p-type Mg3Sb2 from first-principles study

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Revealing the Defect-Dominated Electron Scattering in Mg 3 Sb 2 -Based Thermoelectric Materials

Inhibiting Mg Diffusion and Evaporation by Forming Mg‐Rich Reservoir at Grain Boundaries Improves the Thermal Stability of N‐Type Mg3Sb2 Thermoelectrics

Visualizing the Mg atoms in Mg<sub>3</sub>Sb<sub>2</sub> thermoelectrics using advanced iDPC-STEM technique

Charge compensation weakening ionized impurity scattering and assessing the minority carrier contribution to the Seebeck coefficient in Pb-doped Mg3Sb2 compounds

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Evolution of Nanometer-Scale Microstructure within Grains and in the Intergranular Region in Thermoelectric Mg3(Sb, Bi)2 Alloys

Ag rearrangement induced metal-insulator phase transition in thermoelectric MgAgSb

Probing efficient n-type lanthanide dopants for Mg$_3$Sb$_2$ thermoelectrics

Synergy of grain size and texture effect for high-performance Mg3Sb2-based thermoelectric materials

Enhancing Thermoelectric Performance of Mg3Sb2 Through Substitutional Doping: Sustainable Energy Solutions via First-Principles Calculations

Significantly Enhanced Thermoelectric Performance of p -Type Mg 3 Sb 2 via Zn Substitution on Mg(2) Site: Optimization of Hole Concentration Through Ag Doping

Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

Synergistic effects of Mg vacancy and Ag doping on thermoelectric transport properties of p-type Mg3Sb2