Abstract:Topological phase transition can be induced by electronic correlation effects combined with spin-orbit coupling (SOC). Here, based on the first-principles calculations +U approach, the influence of electronic correlation effects and SOC on topological and electronic properties of the Janus monolayer OsClBr is investigated. With intrinsic out-of-plane (OOP) magnetic anisotropy, the Janus monolayer OsClBr exhibits a sequence of states, namely, the ferrovalley (FV) to half-valley-metal (HVM) to quantum anomalous valley Hall effect (QAVHE) to HVM to FV states with increasing U values. The QAVHE is characterized by a chiral edge state linking the conduction and valence bands with a Chern number C = 1, which is closely associated with the band inversion between dx2-y2/dxy and dz2 orbitals, and sign-reversible Berry curvature. The section with larger U values (2.31-2.35 eV) is very essential for determining the new HVM and QAVHE states, and also proves that a strong electron correlation effect exists in the interior of the Janus monolayer OsClBr. When taking into consideration a representative U value (U = 2.5 eV), a valley polarization value of 157 meV can be observed, which can be switched by reversing the magnetization direction of Os atoms. It is noteworthy that the Curie temperature (TC) strongly depends on the electronic correlation effects. Our work provides a comprehensive discussion on the electronic and topological properties of the Janus monolayer OsClBr, and demonstrates that the electronic correlation effects combined with SOC can drive the emergence of QAVHE, which will open up new opportunities for valleytronic, spintronic, and topological nanoelectronic applications.

Spontaneous valley polarization and valley-nonequilibrium quantum anomalous Hall effect in Janus monolayer ScBrI

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{Cr_2CHCl}$ monolayer

Intrinsic valley polarization and anomalous valley Hall effect in monolayer H -ScAt 2

Strain-engineering spin-valley locking effect in altermagnetic monolayer with multipiezo properties

Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Quantum Anomalous Valley Hall Effect in Ferromagnetic MXenes with Asymmetric Functionalization

Single-layer ScI 2 : A paradigm for valley-related multiple Hall effect

Electronic-correlation induced sign-reversible Berry phase and quantum anomalous valley Hall effects in Janus monolayer OsClBr

Single-Layer ScI2: A Paradigm for Valley-Related Multiple Hall Effect

Layer-locked Anomalous Valley Hall Effect in a Two-Dimensional A-type Tetragonal Antiferromagnetic Insulator

Stacking order modulated anomalous valley Hall effect in antiferromagnetic MXene

Layer-Locked Anomalous Valley Hall Effect in Two-Dimensional A-Type Tetragonal Antiferromagnetic Insulator

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Anomalous valley Hall effect in antiferromagnetic monolayers

Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization

Tunable Valley Polarization in Janus WSSe by Magnetic Proximity Coupling to a CrI3 Layer

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Large Valley Polarization and the Valley-Dependent Hall Effect in a Janus TiTeBr Monolayer