Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of reduced size and weight systems. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers GaN epitaxial layers for subsequent p-type ion implantation can be grown on sapphire substrates but vertical devices are optimal when using GaN homoepitaxial structures. Unlike most other semiconductor substrates, GaN substrates are not grown from the melt. Hydride vapor phase epitaxy or ammonothermal growth are predominantly used to produce substrates and these substrates will experience higher temperatures during subsequent epitaxy and ion implant activation annealing than occurs during substrate formation. In both types of substrates, the threading dislocation distribution can vary by orders of magnitude – these variations correlate well with leakage currents in vertical devices. The activation of the implanted p-type dopants requires high temperature annealing. For most semiconductors, an annealing temperature of ~ 2/3 the melting point leads to a high activation fraction (> 95%) of the implanted species. The implantation process introduces large concentrations of native defects as well as the p-type implant (typically Mg), so it is necessary to remove the defects and for the dopants to locate on substitutional sites (Ga sites for Mg). We demonstrate how the formation of inverted domain defects at temperatures below 1400 °C correlate with Mg-compound formation, whereas annealing temperatures 1400 °C and above do not lead to the formation of such compounds but rather high Mg activation efficiencies. These recent developments, partly through the ARPA-E PNDIODES program as well as international efforts, have brought understanding of the key processing steps and substrate requirements to achieve high activation efficiency p-type doping for planar, vertical device structures in a scalable framework.

Implantation of Gallium into Layered WS2 Nanostructures is Facilitated by Hydrogenation

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Additive ion implantation in gallium arsenide by forming alloy nanoclusters

Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3

Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

Plasma Hydrogenation of Strained Si∕SiGe∕Si Heterostructure for Layer Transfer Without Ion Implantation

Investigation of Plasma Hydrogenation and Trapping Mechanism for Layer Transfer

A nano-droplet hydrodynamic transformation of uniform amorphous bilayer into highly modulated Ge/Si island-chains.

Overcoming the doping limit in GaAs by ion implantation and pulsed laser melting

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

(Invited) Advancements in Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Study of Hydrogen Gettering Effects in Plasma Immersion Ion Implantation Doping Experiments

Molecular dynamics simulation of W Silicon Emitting Centers formation by Ga ion implantation

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Investigation on Gallium Ions Impacting Monolayer Graphene

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Plasma Hydrogenation of Strain-Relaxed SiGe∕Si Heterostructure for Layer Transfer

Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures