Abstract:Revealing the regularities of interaction of accelerated ions with an irradiated material based on the Monte Carlo simulation contributes to the efficient application of focused ion beam technique in modern nanotechnologies. The correctness of the calculation results depends on the model chosen and the parameters determining the surface binding energy (SBE) of sputtered atoms. In this work, the SBE has been determined within the discrete–continuous model, which makes it possible to consider the formation of gallium precipitates during irradiation of a silicon substrate with gallium ions. To compare the simulation results with the experimental data on material sputtering by a focused ion beam, two types of rectangular boxes have been prepared. The structures of the first type were formed at the same dose, close to 5 × 10 17 cm –2 (corresponding to the steady-state sputtering regime), at accelerating voltages of 8, 16, and 30 kV. The structures of the second type were formed at an ion energy of 30 keV and doses of 2.5 × 10 16 , 5 × 10 16 , and 1 × 10 17 cm –2 . The box cross sections were investigated by transmission electron microscopy. The sputtering yield and depth distribution profiles of gallium atoms, calculated in the SDTrimSP 5.07 software package, were compared with the experimental data using the R factor. Two sets of values have been established for the variable parameters: the SBE of gallium atoms and the α 1 parameter of the discrete–continuous model. The first set describes the experimental data with acceptable accuracy for a small number of implanted gallium atoms, which is implemented for low ion doses, as well as for a beam energy of 8 keV and a dose of 5 × 10 17 cm –2 . The second set is optimal for describing the ion beam interaction with the substrate at ion energies of 16 and 30 keV under steady sputtering conditions.

Additive ion implantation in gallium arsenide by forming alloy nanoclusters

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Ion-Beam Synthesis of Gallium Oxide Nanocrystals in a SiO2/Si Dielectric Matrix

High Pressure Processing of Ion Implanted GaN

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Study of Surface Morphology in GaAs by Hydrogen and Helium Implantation at Elevated Temperature

Ion-Beam Modification of Metastable Gallium Oxide Polymorphs

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Implantation of Gallium into Layered WS2 Nanostructures is Facilitated by Hydrogenation

Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices

Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate

Ion implantation in \b{eta}-Ga2O3: physics and technology

Preferential bond formation and interstitial/vacancy annihilation rate drive atomic clustering in gallium ion sputtered compound materials

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Structure and Chemical Composition of Ion-Synthesized Gallium Oxide Nanocrystals in Dielectric Matrices

Al-implantation induced damage in 4H-SiC

Investigation on Gallium Ions Impacting Monolayer Graphene

Plasma Deposition of Gallium Arsenide Nanoclusters on a Silicon Matrix

Modification Mechanism of Collaborative Ions Implanted into 4H-Sic by Atomic Simulation and Experiment