„Aktive Sterbehilfe“ auf dem Weg nach Deutschland?

L. Kovács,A. Frewer

DOI: https://doi.org/10.1007/s00481-004-0277-2

2004-03-01

Ethik in der Medizin

Abstract:

What problem does this paper attempt to address?

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Dawei Di,Ivan Perez-Wurfl,Gavin Conibeer,Martin A. Green

DOI: https://doi.org/10.1117/12.859715

2010-01-01

Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.
Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Dongke Li,Junnan Han,Teng Sun,Jiaming Chen,Etienne Talbot,Remi Demoulin,Wanghua Chen,Xiaodong Pi,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1088/1674-1056/acd7cf

2023-01-01

Chinese Physics B

Abstract:Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community. In this study, atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO2 multilayers. Compared with phosphorous singly doped Si nanocrystals, it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly improved. Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy, which also reduces the formation energy of phosphorous in Si nanocrystals. The results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals, which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.
Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Junnan Han,Dongke Li,Jiaming Chen,Teng Sun,Yuhao Wang,Xiaodong Pi,Wei Li,Ling Xu,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1021/acs.jpcc.3c04190

2023-01-01

Abstract:Co-doping in Si nanocrystals (Si NCs) is an intriguing research topic as the co-doping mechanism at the nanoscale is considerably more complex than the bulk Si. In this study, we utilized ab initio molecular dynamics simulations to investigate the impact of phosphorus (P) and boron (B) co-doping on the properties of Si NCs in the SiO2 matrix. Our findings demonstrate that P and B impurities exhibit a tendency to aggregate within sub-interfaces and interfacial regions. Furthermore, introducing B impurities during the co-doping process facilitates bonding between P and B near the interface to form P-B pairs. The results of ionic conductivity derived from the diffusion coefficient indicate that with increasing B concentration, the conductance activation energy first decreases before increasing, implying that the introduction of B impurity leads to greater bonding of P impurity to Si or B atoms. Vibrational simulations and bonding configurations on the structure reveal that P-B pair formation weakens the intensity of the vibrational density peak due to the P-B co-doping process, thereby stabilizing the structure.
Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

C. Blackwell,Xiaodong Pi,U. Kortshagen,J. Kakalios

DOI: https://doi.org/10.1557/PROC-1066-A06-08

2008-01-01

Abstract:Hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) that have been n-type doped have been synthesized using a dual-plasma co-deposition system. We report the structural and electronic properties of n-type doped a/nc-Si:H as a function of phosphine doping level and nanocrystalline concentration. The volume fraction of nanocrystals in the doped a/nc-Si:H thin films is measured using Raman spectroscopy, and the hydrogen binding configurations are characterized using infra-red absorption spectroscopy. In undoped a/nc-Si:H, the inclusion of low and moderate nanocrystalline concentrations results in an increase in the dark conductivity, compared to a-Si:H films grown without nanocrystalline inclusions. In contrast, the addition of even a low concentration of silicon nanoparticles in doped a/nc-Si:H thin films leads to a decrease in the dark conductivity and photoconductivity, compared to pure a-Si:H films.
Doping silicon nanocrystals with boron and phosphorus

Xiaodong Pi

DOI: https://doi.org/10.1155/2012/912903

IF: 3.791

2012-01-01

Journal of Nanomaterials

Abstract:The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping. Recent progress in the simulation of B- and P-doped Si NCs has led to improved explanation for Band P-doping-induced changes in the optical properties of Si NCs. This is mainly enabled by comprehensive investigation on the locations of B and P in Si NCs and the electronic properties of B- and P-doped Si NCs. I remarks on the implications of newly gained insights on B- and P-doped Si NCs. Continuous research to advance the understanding of the doping of Si NCs with B and P is envisioned.
Lightly boron and phosphorus co-doped silicon nanocrystals

Yeshi Ma,Xiaobo Chen,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1007/s11051-012-0802-z

IF: 2.533

2012-01-01

Journal of Nanoparticle Research

Abstract:The co-doping of silicon nanocrystals (Si NCs) with boron (B) and phosphorus (P) is an important means to tune the optical properties of Si NCs. However, all the previous work only concerns heavy co-doping. In this study, we carry out first-principles study on light co-doping that leads to the incorporation of dopants at the NC surface, rather than inside NCs. The size (diameter) of Si NCs currently investigated is ~2.2 nm. A Si NC without doping is in the form of Si 179 H 148 . It is found that the formation energy of a lightly co-doped Si NC is between those of B- and P-doped Si NCs, hardly being affected by the distance between dopants. Electron localization around P is mainly responsible for the light co-doping-induced reduction of the bandgap of Si NCs. The redshifts of excitation- and emission-energy induced by light co-doping is slightly larger than those induced by B and P doping in most cases. The band-edge radiative recombination rates of undoped, B-doped, P-doped, and lightly co-doped Si NCs have been compared.
Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Guohua Shi,Gang Xu,Gaorong Han

DOI: https://doi.org/10.1016/j.matlet.2006.04.080

IF: 3

2007-01-01

Materials Letters

Abstract:Nanocrystalline Si-rich silicon oxide films were deposited using plasma enhanced chemical vapor deposition technique with the mixture of silane (SiH4), nitrous oxide (N2O) and hydrogen (H-2) as gas source on quartz glass substrate at the substrate temperature of 300 degrees C. The effect of the ratio N2O/SiH4 on the oxidation, microstructures and photoluminescence (PL) of the as-deposited Si-rich silicon oxide films was investigated with FTIR, XRD and HRTEM. The results reveal that with the increasing ratio of N2O/SiH4, more amounts of oxygen are incorporated in the as-deposited films and more nanosized silicon particles are embedded in the films, forming nanocrystalline Si-rich silicon oxide films. The quantum confinement effect or the cooperation of quantum confinement and luminescence center results in the nanocrystalline Si-rich silicon oxide films of higher PL intensity. (c) 2006 Elsevier B.V. All rights reserved.
Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

FENG Ren-hua,ZHANG Xi-wen,HAN Gao-rong

2008-01-01

Abstract:Boron-doped nano-structured amorphous silicon (na-Si∶H) thin films were deposited by plasma enhanced chemical vapor deposition. The influence of doping gas ratio, substrate temperature, and RF power on the electrical property of the films, were systemically studied. Differ from traditional boron-doped a-Si∶H, with the increasing of boron doping content, the conductivity of doped na-Si:H thin films first decreased then increased to a constant level. The doped na-Si∶H thin films, with conductivity activation energy Ea≈0.50eV and σph/σd102, are suggested a potential application as the p-type layer material for silicon thin film solar cells.
Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

X. D. Pi,R. Gresback,R. W. Liptak,S. A. Campbell,U. Kortshagen

DOI: https://doi.org/10.1063/1.2897291

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Gas-phase plasma-synthesized silicon nanocrystals (Si-NCs) are doped with boron (B) or phosphorous (P) during synthesis. The doping efficiency of B is smaller than that of P, consistent with the theoretical prediction of impurity formation energies. Despite vastly different synthesis conditions, the effect of doping on the photoluminescence (PL) of gas-phase-synthesized Si-NCs is qualitatively similar to that of Si-NCs doped during solid phase nucleation. Studies of oxidation-induced changes in PL and etching-induced changes in dopant concentration show that P resides at or near the Si-NC surface, while B is in the Si-NC cores. The oxidation of Si-NCs follows the Cabrera–Mott mechanism [N. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1948)].
Enhanced Subband Light Emission from Si Quantum Dots/sio2 Multilayers Via Phosphorus and Boron Co-Doping

Dongke Li,Jiaming Chen,Teng Sun,Yangyi Zhang,Jun Xu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1364/oe.453086

IF: 3.8

2022-01-01

Optics Express

Abstract:Seeking light sources from Si-based materials with an emission wavelength meeting the requirements of optical telecommunication is a challenge nowadays. It was found that the subband emission centered near 1200 nm can be achieved in phosphorus-doped Si quantum dots/SiO2 multilayers. In this work, we propose the phosphorus/boron co-doping in Si quantum dots/SiO2 multilayers to enhance the subband light emission. By increasing the B co-doping ratio, the emission intensity is first increased and then decreased, while the strongest integrated emission intensity is almost two orders of magnitude stronger than that of P solely-doped sample. The enhanced subband light emission in co-doped samples can be attributed to the passivation of surface dangling bonds by B dopants. At high B co-doping ratios, the samples transfer to p-type and the subband light emission from phosphorus-related deep level is suppressed but the emission centered around 1400 nm is appeared.
The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Zhe Li,Juncao Bian,Haiyan He,Xiwen Zhang,Gaorong Han

DOI: https://doi.org/10.1088/1742-6596/276/1/012173

2011-01-01

Journal of Physics Conference Series

Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.
Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Shu Zhou,Xiaodong Pi,Zhenyi Ni,Qingbin Luan,Yingying Jiang,Chuanhong Jin,Tomohiro Nozaki,Deren Yang

DOI: https://doi.org/10.1002/ppsc.201400103

IF: 3.467

2014-01-01

Particle & Particle Systems Characterization

Abstract:Hyperdoping silicon nanocrystals (Si NCs) to a concentration exceeding the solubility limit of a dopant may enable their novel applications. Here, the successful hyperdoping of Si NCs with boron (B) and phosphorus (P) is demonstrated, which are the most important dopants for Si. Despite the hyperdoping, the diamond structure of Si NCs is hardly modified. There are both electrically active B and P in hyperdoped Si NCs. It is proposed that the hyperdoping is made possible mainly by the kinetics in the nonthermal plasma synthesis of Si NCs. Collision between Si NCs and B or P atoms and the binding energy of B or P at the NC surface are critical to the understanding on the differences in the doping efficiency and dopant distribution between B and P. B-hyperdoping-induced tensile stress needs to be taken into account in the investigation on the doping and oxidation of Si NCs.
Doped Silicon Nanocrystals from Organic Dopant Precursor by A Sicl4-Based High Frequency Nonthermal Plasma

Shu Zhou,Yi Ding,Xiaodong Pi,Tomohiro Nozaki

DOI: https://doi.org/10.1063/1.4901278

IF: 4

2014-01-01

Applied Physics Letters

Abstract:Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl4, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si–H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.
Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Terry Chien-Jen Yang,Keita Nomoto,Binesh Puthen-Veettil,Ziyun Lin,Lingfeng Wu,Tian Zhang,Xuguang Jia,Gavin Conibeer,Ivan Perez-Wurfl

DOI: https://doi.org/10.1088/2053-1591/aa7328

IF: 2.025

2017-07-10

Materials Research Express

Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

materials science, multidisciplinary
Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

Pi Xiaodong,Anthony Rebecca,Campbell Stephen,Kortshagen Uwe

DOI: https://doi.org/10.1557/proc-1031-h14-04

2007-01-01

MRS Proceedings

Abstract:Silicon nanoparticles (Si-NPs) < 6 nm have been doped with B and P in nonthermal plasma. The doping efficiency of B is smaller than that of P, consistent with the theoretically predicted larger formation energy of B than P. The effect of doping on the oxidation-induced changes in light emission from Si-NPs is different between B and P. It appears that P is at or near the surface of Si-NPs, and that B is well incorporated inside Si-NPs. Inks based on doped Si-NPs are produced by attaching alkyl ligands to the surface of Si-NPs and dispersing them in organic solvents.
The Phosphorus and Boron Co-Doping Behaviors at Nanoscale in Si Nanocrystals/Sio2 Multilayers

Dongke Li,Yicheng Jiang,Pei Zhang,Dan Shan,Jun Xu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1063/1.4984949

IF: 4

2017-01-01

Applied Physics Letters

Abstract:Phosphorus (P) and Boron (B) co-doping effects at the nanoscale in Si nanocrystals/SiO2 multilayers have been studied in the present work. Several interesting experimental results are achieved which are in contrast to the case in bulk-Si and the previous observations on the doped Si nanocrystals. It is found that all the co-doping samples are n-type regardless of B doping ratios. The P doping efficiency in Si NCs is higher than B dopants, and it can be improved via B co-doping with suitable levels. Raman and ESR spectra indicate that the different occupation preferences of P and B in Si NCs are responsible for the interesting co-doping behaviors. It looks like that the electronic structures and the physical properties of Si NCs can be modulated via the impurities co-doping approach.
Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Zhe Li,Xiwen Zhang,Gaorong Han

DOI: https://doi.org/10.1002/pssa.200925107

2010-01-01

Abstract:Boron doped nanocrystalline silicon (nc-Si, H) films were deposited by plasma-enhanced chemical vapor deposition (PECVD). A variety of techniques, including X-ray diffraction (XRD), Raman scattering (RS), UV-Vis-NIR spectroscopy and conductivity measurement were used to characterize the grown materials. Lightly B-doped samples are well crystallized, while the undoped and heavily doped ones are amorphous. The optical bandgap decreases as the substrate temperature, radio-frequency (RF) power density and diborane concentration increase. The influence of many deposition parameters such as diborane concentration, substrate temperature RF power and deposition pressure on electrical, optical properties, and deposition rate were systemically studies. The optimum combination of deposition parameters was suggested to obtain the appropriate boron doped nc-Si-H thin films that can be applied as a p type layer or window layer material for silicon thin-film solar cells.
Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Zhenyi Ni,Xiaodong Pi,Stefaan Cottenier,Deren Yang

DOI: https://doi.org/10.1103/physrevb.95.075307

2017-01-01

Abstract:Doping silicon nanocrystals (Si NCs) embedded in silicon dioxide (SiO2) with boron (B) and phosphorus (P) is a promising way of tuning the properties of Si NCs. Here we take advantage of density functional theory to investigate the dependence of the structural and electronic properties of Si NCs embedded in SiO2 on the doping of B and P. The locations and energy-level schemes are examined for singularly B-doped or B/P-codoped Si NCs embedded in SiO2 with a perfect or defective Si/SiO2 interface at which a Si dangling bond exists. A dangling bond plays an important role in the doping of Si NCs with B or B/P. The doping behavior of B in Si NCs embedded in SiO2 vastly differs from that of P. The electronic structure of a B/P-codoped Si NC largely depends on the distribution of the dopants in the NC.
Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

Pengyu Wang,Qi Wang,Xin Guo,Zhigang Jia,Tianhe Li,Xiaomin Ren,Shiwei Cai

DOI: https://doi.org/10.1117/12.917901

2011-01-01

Abstract:We have fabricated strain-reduced InAs quantum dots (QDs) by boron incorporation grown on GaAs(100) substrate. The size of uncapped InAs QDs was increased with boron incorporation. The effect of boron on the PL spectra of InAs QDs capped by an InGaAs strain-reducing layer wasn't obvious. However, when boron atoms were incorporated in InAs QDs capped by a GaAs overgrown layer, the PL intensity was strongly enhanced, and the PL peak shifted towards a longer wavelength. It was found that the incorporation of boron atoms within the InAs QDs could drastically reduce the In/Ga intermixing effects during capping coverage.
First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Junnan Han,Dongke Li,Teng Sun,Jiaming Chen,Yuhao Wang,Xiaodong Pi,Wei Li,Ling Xu,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1088/1402-4896/acd08f

2023-01-01

Physica Scripta

Abstract:Doping in Si nanocrystals (Si NCs) is an interesting topic since the doping behaviors in the nanoscale are quite complicated compared with the case in bulk Si. In our present work, we use the first-principles calculation to study Phosphorus (P) or Boron (B) doping in Si NCs with the size of 2-8 nm embedded in SiO2 matrix by taking into account the existence of dangling bonds on the interfacial region. It is found that both P and B impurities tend to stay at the interfacial region to passivate the dangling bonds when the dot size is as small as 2 nm. However, P impurities exhibit the possibility to occupy the inner sites of Si NCs while B impurities are more difficult to be introduced into Si NCs due to the large formation energy. Our detailed study suggests that P or B impurities preferentially stay at the intermediate sites between Si and oxygen to form stable bonding configurations. With increasing the dot size from 2 nm to 8 nm, both P and B impurities can enter into the Si NCs more easily due to the relaxation of stress in the larger-sized Si NCs. Our theoretical results are in good agreement with the experimental observations.

„Aktive Sterbehilfe“ auf dem Weg nach Deutschland?

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Doping silicon nanocrystals with boron and phosphorus

Lightly boron and phosphorus co-doped silicon nanocrystals

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Enhanced Subband Light Emission from Si Quantum Dots/sio2 Multilayers Via Phosphorus and Boron Co-Doping

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Doped Silicon Nanocrystals from Organic Dopant Precursor by A Sicl4-Based High Frequency Nonthermal Plasma

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Doped Silicon Nanoparticles Synthesized by Nonthermal Plasma

The Phosphorus and Boron Co-Doping Behaviors at Nanoscale in Si Nanocrystals/Sio2 Multilayers

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Effect of Boron on the Surface and Optical Properties for (b)inas/gaas Self-Assembled Quantum Dots Grown by MOCVD

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix