Abstract:Bi2Te3-based compounds are thermoelectric materials with the best performance near room temperature. The existence of a large number of complex defects makes defect engineering a core stratagem for adjusting and improving the thermoelectric performance. Therefore, understanding and effectively controlling the existence form and concentration of defects is crucial for achieving high-thermoelectric performance in Bi2Te3-based alloy. Herein, a series of Cl doped n-type quaternary Bi2-xSbxTe3-ySey compounds is synthesized by the zone-melting method. The correlation between defect evolution process and thermoelectric performance is systematically investigated by first-principles calculation and experiments. Alloying Sb on Bi site and Se on Te site induce charged structural defects, leading to a significant change in the carrier concentration. For Bi2-xSbxTe2.994Cl0.006 compounds, alloying Sb on Bi site reduces the formation energy of the antisite defect, which generates the antisite defect and accompanied with the increase of the minority carrier concentration from 2.09x10(16) to 3.99x10(17) cm(-3). The increase of the minority carrier severely deteriorates the electrical transport properties. In contrast, alloying Se in the Bi1.8Sb0.2Te2.994-ySeyCl0.006 compound significantly lowers the formation energy of the complex defect +, which becomes more energetically favorable and suppresses the formation of the antisite defect. As a result, the concentration of minority carriers decreases to 1.46x10(16) cm(-3). This eliminates the deterioration effect of the minority carrier on the electrical transport properties of the material and greatly improves the power factor. A maximum power factor of 4.49 mW/(m center dot K-2) is achieved for Bi1.8Sb0.2Te2.944Se0.05Cl0.006 compound at room temperature. By reducing thermal conductivity through intensifying the phonon scattering via alloying Sb and Se, the maximum ZT value of 0.98 is attained for Bi1.8Sb0.2Te2.844Se0.15Cl0.006 compound at room temperature. Our finding provides an important guidance for adjusting point defects, carrier concentrations, and thermoelectric performances in Bi2Te3-based compounds with complex compositions.

Record High Thermoelectric Figure of Merit of a III-V Semiconductor InGaSb by Defects Engineering via the Addition of Excess Constituent Elements

Point Defect Engineering of High‐Performance Bismuth‐Telluride‐Based Thermoelectric Materials

Vacancy-Based Defect Regulation for High Thermoelectric Performance in Ge9Sb2Te12-x Compounds

Defect Structure Regulation and Thermoelectric Transfer Performance in N-Type Bi2-xSbxTe3-ySey-based Compounds

Engineering atomic-level crystal lattice and electronic band structure for extraordinarily high average thermoelectric figure of merit in n-type PbSe

Engineering an Atomic-Level Crystal Lattice and Electronic Band Structure for an Extraordinarily High Average Thermoelectric Figure of Merit in N-Type PbSe

Enhanced Thermoelectric Performance in Ge 0.955− x Sb x Te/FeGe 2 Composites Enabled by Hierarchical Defects

Evolution of defect structures leading to high ZT in GeTe-based thermoelectric materials

Point defect approach to enhance the thermoelectric performance of Zintl-phase BaAgSb

Constructing multi-type defects in In0.1Sb1.9Te3-(MgB2) composites: Simultaneously enhancing the thermoelectric and mechanical properties

Contrasting SnTe-NaSbTe2 and SnTe-NaBiTe2 Thermoelectric Alloys: High Performance Facilitated by Increased Cation Vacancies and Lattice Softening

Boosting Thermoelectric Performance of Cu2SnSe3 Via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects.

High Performance Mg2(Si,Sn) Solid Solutions: a Point Defect Chemistry Approach to Enhancing Thermoelectric Properties

Point defect engineering and machinability in n-type Mg3Sb2-based materials

Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in N‐type PbSe Rivalling PbTe

Enhancing thermoelectric performance of Sb2Te3 through swapped bilayer defects

Defect Engineering of Bi2SeO2 Thermoelectrics

Defect Engineering for Realizing High Thermoelectric Performance in N-Type Mg3sb2-Based Materials

Interstitial Defects Facilitate Dense Dislocations and Band Convergence for High Thermoelectric Performance in SnTe

Modulating the Valence of Ga and the Deep Level Impurity for High Thermoelectric Performance of N-Type Pb0.98Ga0.02Te1-xSex Compounds

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe