Abstract:As an eco-friendly thermoelectric material, Cu2SnSe3 has recently drawn much attention. However, its high electrical resistivity ρ and low thermopower S prohibit its thermoelectric performance. Herein, we show that a widened band gap and the increased density of states are achieved via S alloying, resulting in 1.6 times enhancement of S (from 170 to 277 μV/K). Moreover, doping In at the Sn site can cause a 19-fold decrease of ρ and a 2.2 times enhancement of S (at room temperature) due to both multivalence bands' participation in electrical transport and the further enhancement of the density of states effective mass, which allows a sharp increase in the power factor. As a result, PF = 9.3 μW cm–1 K–2 was achieved at ∼800 K for the Cu2Sn0.82In0.18Se2.7S0.3 sample. Besides, as large as 44% reduction of lattice thermal conductivity is obtained via intensified phonon scattering by In-doping-induced formation of multidimensional defects, such as Sn vacancies, dislocations, twin boundaries, and CuInSe2 nanoprecipitates. Consequently, a record high figure of merit of ZT = 1.51 at 858 K is acquired for Cu2Sn0.82In0.18Se2.7S0.3, which is 4.7-fold larger than that of pristine Cu2SnSe3.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.1c03120?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.1c03120</a>.Temperature dependence of Cp for Cu2SnSe3, Cu2SnSe2.7S0.3, and Cu2Sn0.82In0.18Se2.7S0.3; phase characterization for all investigated samples; temperature dependence of the ZT value for Cu2SnSe3–xSx and the repeatability of thermoelectric performance for Cu2Sn0.82In0.18Se2.7S0.3; calculation details of md*; optical band gaps for S-alloyed Cu2SnSe3; unfolded effective band structure of Cu2SnSe3; calculation of lattice thermal conductivity via the Debye–Callaway model; and the calculation details of thermopower-dependent thermoelectric properties (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.1c03120/suppl_file/nn1c03120_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Boosting Thermoelectric Performance of Cu2SnSe3 Via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects.

Boosting Thermoelectric Performance of Cu 2 SnSe 3 via Comprehensive Band Structure Regulation and Intensified Phonon Scattering by Multidimensional Defects

Enhancing the Thermoelectric Performance of Cu1.8S by Sb/Sn Co-Doping and Incorporating Multiscale Defects to Scatter Heat-Carrying Phonons

Carrier-filtering and phonon-blocking AgSnSe2-decorated grain boundaries to boost the thermoelectric performance of Cu2Sn0.9Co0.1S3

Enhanced thermoelectric properties of Cu3SbSe4-based materials by synergistic modulation of carrier concentration and phonon scattering

Defect Chemistry Engineering Promotes the Dopability of Cu for an Extraordinary Thermoelectric Performance of Hole-Doped PbSe with Resonant States

Band Modification Towards High Thermoelectric Performance of SnSb2Te4 with Strong Anharmonicity Driven by Cation Disorder

High Thermoelectric Performance through Crystal Symmetry Enhancement in Triply Doped Diamondoid Compound Cu 2 SnSe 3

Toward Ultrahigh Thermoelectric Performance of Cu2SnS3‐Based Materials by Analog Alloying

Enhancing thermoelectric and mechanical properties of p-type Cu3SbSe4-based materials via embedding nanoscale Sb2Se3

Thermoelectric Performance Enhancement in SnS Polycrystals Owing to Hole Doping Combined with Textured Microstructures

Ultralow Thermal Conductivity and Extraordinary Thermoelectric Performance Realized in Codoped Cu3SbSe4 by Plasma Spark Sintering

Enhancement of the thermoelectric properties of MnSb2Se4 through Cu resonant doping

Band Engineering Through Pb‐Doping of Nanocrystal Building Blocks to Enhance Thermoelectric Performance in Cu3SbSe4

Enhanced thermoelectric performance of Cu2SnSe3 via synergistic effects of Cd-doping and CuGaTe2 alloying

Improving the thermoelectric performance of Cu 2 SnSe 3 via regulating micro- and electronic structures

Realizing High Thermoelectric Performance of Cu and Ce Co-Doped P-Type Polycrystalline SnSe Via Inducing Nanoprecipitation Arrays

Dense twin and domain boundaries lead to high thermoelectric performance in Sn-doped Cu 3 SbS 4

Enhanced Thermoelectric Performance of Cu2SnSe3 by Synergic Effects Via Cobalt-Doping

Enhancing the thermoelectric performance of SnTe-CuSbSe 2 with an ultra-low lattice thermal conductivity

Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu1.8S Via Carrier Concentration Regulation and Multiscale Phonon Scattering