Abstract:A post‐doping process called Catalytic doping on intrinsic hydrogenated amorphous silicon thin film is performed on the electron selective side of silicon heterojunction solar cells. This architecture combines the functions of two layers by enabling excellent interface passivation and high carrier selectivity, leading to an improved short‐circuit current density and certified efficiency of 23.65%. An intrinsic hydrogenated amorphous silicon (a‐Si:H(i)) film and a doped silicon film are usually combined in the heterojunction contacts of silicon heterojunction (SHJ) solar cells. In this work, a post‐doping process called catalytic doping (Cat‐doping) on a‐Si:H(i) is performed on the electron selective side of SHJ solar cells, which enables a device architecture that eliminates the additional deposition of the doped silicon layer. Thus, a single phosphorus Cat‐doping layer combines the functions of two other layers by enabling excellent interface passivation and high carrier selectivity. The overall thinner layer on the window side results in higher spectral response at short wavelengths, leading to an improved short‐circuit current density of 40.31 mA cm−2 and an efficiency of 23.65% (certified). The cell efficiency is currently limited by sputter damage from the subsequent transparent conductive oxide fabrication and low carrier activation in the a‐Si:H(i) with Cat‐doping. Numerical device simulations show that the a‐Si:H(i) with Cat‐doping can provide sufficient field effect passivation even at lower active carrier concentrations compared to the as‐deposited doped layer, due to the lower defect density.

Structural and optical properties of phosphorous doped nanocrystalline silicon deposited using a VHF PECVD process for silicon heterojunction solar cells and optimization of a simple p-n junction cell using SCAP-1D tool

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Impact of the n+ emitter layer on the structural and electrical properties of p-type polycrystalline silicon thin-film solar cells

Using phosphorus doped hydrogenated silicon oxycarbide film as a window layer on the light entrance side of silicon heterojunction solar cells: The role of phase separation on electron transport

Doped Microcrystalline Silicon Layers for Solar Cells by 13.56 Mhz Plasma-Enhanced Chemical Vapour Deposition

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Microstructure and Photoelectric Properties of P-Doped Silicon-Rich Sinx Film As an N-Type Layer for Pin-Type Amorphous Silicon Thin Film Solar Cells

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Crystalline Silicon Heterojunction Solar Cell with 81.6% Fill Factor, Deposited by Physical Vapour Deposition Methods Only

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Improved Device Performance of Si-based Heterojunction Solar Cells by Using Phosphorus Doped Si Nanocrystals Embedded in SiC Host Matrix

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

Silicon Nanocrystal Conjugated Polymer Hybrid Solar Cells with Improved Performance

Nanocrystalline silicon thin film growth and application for silicon heterojunction solar cells: a short review

Advanced PECVD Processes for SiNW Based Solar Cells and Thin Film Transistors

Fabrication and Optimization of Single-Junction Nc-Si:H N–i–p Solar Cells Using Si:H Phase Diagram Concepts Developed by Real Time Spectroscopic Ellipsometry

Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts

Investigation of in situ grown P-doped nc-SiOx: H thin film as the n layer for the application of thin film solar cell

Influence of RF power on structural optical and electrical properties of hydrogenated nano-crystalline silicon (nc-Si:H) thin films deposited by PE-CVD