Abstract:Out of the different structural phases of molybdenum ditelluride (MoTe2), the distorted octahedral 1T' possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T'-MoTe2 is a semimetal with superconductivity, which has been predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. Large instability of monolayer 1T'-MoTe2 in environmental conditions, however, has made its investigation extremely challenging so far. In this work, we demonstrate homogeneous growth of large single-crystal (up to 500 μm) monolayer 1T'-MoTe2 via chemical vapor deposition (CVD) and its stabilization in air with a scalable encapsulation approach. The encapsulant is obtained by electrochemically delaminating CVD hexagonal boron nitride (hBN) from copper foil, and it is applied on the freshly grown 1T'-MoTe2 via a top-down dry lamination step. The structural and electrical properties of encapsulated 1T'-MoTe2 have been monitored over several months to assess the degree of degradation of the material. We find that when encapsulated with hBN, the lifetime of monolayer 1T'-MoTe2 successfully increases from a few minutes to more than a month. Furthermore, the encapsulated monolayer can be subjected to transfer, device processing, and heating and cooling cycles without degradation of its properties. The potential of this scalable heterostack is confirmed by the observation of signatures of low-temperature phase transition in monolayer 1T'-MoTe2 by both Raman spectroscopy and electrical measurements. The growth and encapsulation methods reported in this work can be employed for further fundamental studies of this enticing material as well as facilitate the technological development of monolayer 1T'-MoTe2.

Large-area and few-layered 1T'-MoTe2thin films grown by cold-wall chemical vapor deposition

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Controllable Growth of Large-Area 1T′, 2H Ultrathin MoTe2 Films, and 1T′–2H In-Plane Homojunction

Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

Low-resistivity Ohmic contacts of Ti/Al on few-layered 1T'-MoTe2/2H-MoTe2 heterojunctions grown by chemical vapor deposition

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Fast Solid-Phase Synthesis of Large-Area Few-Layer 1T’-Mote2 Films

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics

Van der Waals Heteroepitaxy of Te Crystallites/2H-MoTe2 Atomically Thin Films on GaAs Substrates by Using Metal-Organic Chemical-Vapor Deposition

Synthesis of Large-Scale Monolayer 1T'-MoTe2 and Its Stabilization via Scalable hBN Encapsulation

Cm2 Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control David

Synthesis of High-Quality Large-Area Homogenous 1t ' Mote2 from Chemical Vapor Deposition

Molecular Beam Epitaxy Growth of Atomically Ultrathin MoTe2 Lateral Heterophase Homojunctions on Graphene Substrates

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

Effective-concentration-ratio driven phase engineering of MBE-grown few-layer MoTe2

Growth of bilayer MoTe2 single crystals with strong non-linear Hall effect

Growth of bilayer MoTe 2 single crystals with strong non-linear Hall effect

Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe 2

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy