Abstract:Out of the different structural phases of molybdenum ditelluride (MoTe2), the distorted octahedral 1T' possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T'-MoTe2 is a semimetal with superconductivity, which has been predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. Large instability of monolayer 1T'-MoTe2 in environmental conditions, however, has made its investigation extremely challenging so far. In this work, we demonstrate homogeneous growth of large single-crystal (up to 500 μm) monolayer 1T'-MoTe2 via chemical vapor deposition (CVD) and its stabilization in air with a scalable encapsulation approach. The encapsulant is obtained by electrochemically delaminating CVD hexagonal boron nitride (hBN) from copper foil, and it is applied on the freshly grown 1T'-MoTe2 via a top-down dry lamination step. The structural and electrical properties of encapsulated 1T'-MoTe2 have been monitored over several months to assess the degree of degradation of the material. We find that when encapsulated with hBN, the lifetime of monolayer 1T'-MoTe2 successfully increases from a few minutes to more than a month. Furthermore, the encapsulated monolayer can be subjected to transfer, device processing, and heating and cooling cycles without degradation of its properties. The potential of this scalable heterostack is confirmed by the observation of signatures of low-temperature phase transition in monolayer 1T'-MoTe2 by both Raman spectroscopy and electrical measurements. The growth and encapsulation methods reported in this work can be employed for further fundamental studies of this enticing material as well as facilitate the technological development of monolayer 1T'-MoTe2.

Growth of bilayer MoTe 2 single crystals with strong non-linear Hall effect

Growth of bilayer MoTe2 single crystals with strong non-linear Hall effect

Two-Fold Anisotropic Superconductivity in Bilayer T$_d$-MoTe$_2$

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Synthesis of Large-Scale Monolayer 1T'-MoTe2 and Its Stabilization via Scalable hBN Encapsulation

One-Step Growth of Bilayer 2H-1T' MoTe 2 van der Waals Heterostructures with Interlayer-Coupled Resonant Phonon Vibration

Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2

Large-area and few-layered 1T'-MoTe2thin films grown by cold-wall chemical vapor deposition

Electronic Structure of Molecular Beam Epitaxy Grown 1T^'-Mote_2 Film and Strain Effect

Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy

Controlled Growth of large area bilayer MoS$_2$ films on SiO$_2$ substrates by chemical vapour deposition technique

Absorption Dichroism of Monolayer 1T′-Mote 2 in Visible Range

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Unraveling the multistage phase transformations in monolayer Mo-Te compounds

Circular Photogalvanic Effect from Third-Order Nonlinear Effect in 1T’-Mote2

Electronic structure of molecular beam epitaxy grown 1T$^\prime$-MoTe$_2$ film and strain effect

Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

Circular photogalvanic effect from third-order nonlinear effect in 1T’-MoTe 2

Giant spin Hall effect in AB-stacked MoTe2/WSe2 bilayers