Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Quantum Effects and Phase Tuning in Epitaxial Hexagonal and Monoclinic Mote2 Monolayers

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Unraveling the multistage phase transformations in monolayer Mo-Te compounds

MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Enhanced 1t '-Phase Stabilization And Chemical Reactivity In A Mote2 Monolayer Through Contact With A 2d Ca2n Electride

Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

Engineering the Structural and Electronic Phases of MoTe2 Through W Substitution

Transformation of Monolayer MoS 2 into Multiphasic MoTe 2 : Chalcogen Atom-Exchange Synthesis Route

Electronic Structure of Molecular Beam Epitaxy Grown 1T^'-Mote_2 Film and Strain Effect

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Structural Phase Stability Control of Monolayer MoTe2 with Adsorbed Atoms and Molecules

Effective-concentration-ratio driven phase engineering of MBE-grown few-layer MoTe2

Chemical Vapor Deposition Growth of Few-Layer MoTe2 in the 2H, 1T', and 1T Phases: Tunable Properties of MoTe2 Films.

Controllable Growth of Large-Area 1T′, 2H Ultrathin MoTe2 Films, and 1T′–2H In-Plane Homojunction

Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures

Thermodynamics and Kinetics Synergetic Phase-Engineering of Chemical Vapor Deposition Grown Single Crystal MoTe2 Nanosheets

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Molecular Beam Epitaxy growth of MoTe$_2$ on Hexagonal Boron Nitride