Abstract:Phase engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoTe2 offers tremendous opportunities in various device applications. However, most of the existing methods so far only address the small-area local phase change or the growth of certain kinds of phases of MoTe2 film by laser irradiation, mechanical strain, or procursor type. Obtaining facile, tunable, reversible, and continuous-phase transition and evolution between different phases in direct growth of large-area, few-layer MoTe2 still remains challenging. Here, we develop a facile method to achieve phase control and transition and report a highly tunable, tellurization velocity-dependent metallic-semiconducting-metallic phase evolution in chemical vapor deposition (CVD) growth of large-area, few-layer MoTe2. We found four different phase stages, including two different types of coexistence phases of both 2H and 1 T' phases, 100% 2H phase, and 100% 1T' phase, would emerge, relying on the adopted tellurization velocity. Importantly, the tellurization velocity should be extremely controlled to obtain 100% 2H phase MoTe2, while 100% 1T' phase requires a fast tellurization velocity. We further found that such metallic-semiconducting-metallic phase evolution took place with a homogeneous spatial distribution and differs from previous reports in which obvious phase separations are usually found during the phase transition. The resulting MoTe2 shows high quality with room-temperature mobility comparable with mechanically exfoliated materials. The results might impact large-scale phase engineering of TMDs and other 2D materials for Weyl semimetal topological physics and potential 2D semiconductor device applications.

Thermodynamics and Kinetics Synergetic Phase-Engineering of Chemical Vapor Deposition Grown Single Crystal MoTe2 Nanosheets

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Robust temperature–strain coupling in phase and shape evolution of MoTe2 nanosheets

Unraveling the multistage phase transformations in monolayer Mo-Te compounds

Hydrothermal controlled growth of MoTe2/MoO3−x materials: Synthesis mechanism, light-matter interaction and its photoelectrochemical activity

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy

Transformation of Monolayer MoS 2 into Multiphasic MoTe 2 : Chalcogen Atom-Exchange Synthesis Route

Polymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallization

Controllable 2H-to-1t' Phase Transition in Few-Layer MoTe2.

Phase-selective Synthesis of 1T′ MoS2 Monolayers and Hetero-Phase Bilayers

Effective-concentration-ratio driven phase engineering of MBE-grown few-layer MoTe2

Phase transformations in single-layer MoTe2stimulated by electron irradiation and annealing

In Situ STEM Observation of Phase Transition Triggered by Mo Migration in MoTe2.

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe2: Implications for Low Contact Resistance Electronic Devices

Ordered growth of hexagonal and monoclinic phases of MoTe2 on a sapphire substrate

In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2