D. Rhodes,D. A. Chenet,B. E. Janicek,C. Nyby,Y. Lin,W. Jin,D. Edelberg,E. Mannebach,N. Finney,A. Antony,T. Schiros,T. Klarr,A. Mazzoni,M. Chin,Y. -c Chiu,W. Zheng,Q. R. Zhang,F. Ernst,J. I. Dadayp,X. Tong,J. Ma,R. Lou,S. Wan,T. Qian,H. Ding,R. M. Osgood,D. W. Paley,A. M. Lindenberg,P. Y. Huang,A. N. Pasupathy,M. Dubey,J. Hone,L. Balicas

Abstract:MoTe2 is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T'- or β-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ∼1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2 through W substitution by unveiling the phase-diagram of the Mo1-xWxTe2 solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration xc ∼ 8% stabilizes the γ-phase at room temperature. This suggests that crystals with x close to xc might be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe2.

Quantum Effects and Phase Tuning in Epitaxial Hexagonal and Monoclinic Mote2 Monolayers

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy

Unraveling the multistage phase transformations in monolayer Mo-Te compounds

Electronic Structure of Molecular Beam Epitaxy Grown 1T^'-Mote_2 Film and Strain Effect

Electronic structure of molecular beam epitaxy grown 1T$^\prime$-MoTe$_2$ film and strain effect

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Topological Phase Transition Between Distinct Weyl Semimetal States in MoTe2

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution

Enhanced 1t '-Phase Stabilization And Chemical Reactivity In A Mote2 Monolayer Through Contact With A 2d Ca2n Electride

Phase-Controlled Growth of One-Dimensional Mo6Te6 Nanowires and Two-Dimensional MoTe2 Ultrathin Films Heterostructures

Engineering the Structural and Electronic Phases of MoTe2 Through W Substitution

Electronic Janus lattice and kagome-like bands in coloring-triangular MoTe2 monolayers

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors.

Controllable phase modulation and electronic structures of monolayer MoSe2xTe2(1−x) alloys grown via molecular beam epitaxy

Absorption Dichroism of Monolayer 1T′-Mote 2 in Visible Range

Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films

Controllable Growth of Large-Area 1T′, 2H Ultrathin MoTe2 Films, and 1T′–2H In-Plane Homojunction

Molecular Beam Epitaxy Growth of Atomically Ultrathin MoTe2 Lateral Heterophase Homojunctions on Graphene Substrates

Atomic Insights into Phase Evolution in Ternary Transition-Metal Dichalcogenides Nanostructures.

Effective-concentration-ratio driven phase engineering of MBE-grown few-layer MoTe2