Abstract:Out of the different structural phases of molybdenum ditelluride (MoTe2), the distorted octahedral 1T' possesses great interest for fundamental physics and is a promising candidate for the implementation of innovative devices such as topological transistors. Indeed, 1T'-MoTe2 is a semimetal with superconductivity, which has been predicted to be a Weyl semimetal and a quantum spin Hall insulator in bulk and monolayer form, respectively. Large instability of monolayer 1T'-MoTe2 in environmental conditions, however, has made its investigation extremely challenging so far. In this work, we demonstrate homogeneous growth of large single-crystal (up to 500 μm) monolayer 1T'-MoTe2 via chemical vapor deposition (CVD) and its stabilization in air with a scalable encapsulation approach. The encapsulant is obtained by electrochemically delaminating CVD hexagonal boron nitride (hBN) from copper foil, and it is applied on the freshly grown 1T'-MoTe2 via a top-down dry lamination step. The structural and electrical properties of encapsulated 1T'-MoTe2 have been monitored over several months to assess the degree of degradation of the material. We find that when encapsulated with hBN, the lifetime of monolayer 1T'-MoTe2 successfully increases from a few minutes to more than a month. Furthermore, the encapsulated monolayer can be subjected to transfer, device processing, and heating and cooling cycles without degradation of its properties. The potential of this scalable heterostack is confirmed by the observation of signatures of low-temperature phase transition in monolayer 1T'-MoTe2 by both Raman spectroscopy and electrical measurements. The growth and encapsulation methods reported in this work can be employed for further fundamental studies of this enticing material as well as facilitate the technological development of monolayer 1T'-MoTe2.

Synthesis of High-Quality Large-Area Homogenous 1t ' Mote2 from Chemical Vapor Deposition

Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

Fast Solid-Phase Synthesis of Large-Area Few-Layer 1T’-Mote2 Films

Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe 2

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Controllable Growth of Large-Area 1T′, 2H Ultrathin MoTe2 Films, and 1T′–2H In-Plane Homojunction

Large-area and few-layered 1T'-MoTe2thin films grown by cold-wall chemical vapor deposition

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Cm2 Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control David

Thermodynamics and Kinetics Synergetic Phase-Engineering of Chemical Vapor Deposition Grown Single Crystal MoTe2 Nanosheets

Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

Transformation of Monolayer MoS 2 into Multiphasic MoTe 2 : Chalcogen Atom-Exchange Synthesis Route

Ultrahigh Yield and Large-Scale Fast Growth of Large-Size High-Quality Van Der Waals Transition-Metal Telluride Single Crystals

Synthesis of Large-Scale Monolayer 1T'-MoTe2 and Its Stabilization via Scalable hBN Encapsulation

Structural Evolution of Atomically Thin 1t’‐mote2 Alloyed in Chalcogen Atmosphere

Hydrothermal controlled growth of MoTe2/MoO3−x materials: Synthesis mechanism, light-matter interaction and its photoelectrochemical activity

Continuous Template Growth of Large-Scale Tellurene Films on 1T'-MoTe2

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Seeded 2D Epitaxy of Large-Area Single-Crystal Films of the Van Der Waals Semiconductor 2H MoTe2.