Abstract:Ionizing radiation detection devices have been widely used in recent years in various applications and experimental fields, such as high-energy physics, nuclear physics, and medical imaging. Detailed description of their operational properties and their characterization by means of numerical modelling, as simulations, are key issue to understand the characteristics of radiation detectors in terms of efficiency, resolution and signal-to-noise ratio, since they allow optimising parameters that will be further used. The modelling processes, as the simulations, are routinely carried out using various tools, like Monte Carlo approaches, for instance: PENELOPE, FLUKA or GEANT4 are used to study the interaction of the radiation with the detector accounting for the whole physical processes. However, transporting electron/hole pairs, as generated through the device sensor to conform the corresponding electronic signals uses tools based on the finite element method, such as TCAD (Technology Computer Aided Design), which are developed mainly to help the microelectronics industry to design products. Usually, modelling approaches for radiation transport and electronic signal production are not integrated, thus performing the simulation process by splitting the problem into successive independent phases. Within this framework, the present study proposes, implements, and reports on a novel methodology that allows combining the two approaches aimed at integrating the complete simulation, thus achieving astep-by-step integrated modelling flow to describe the interaction of ionizing radiation with the sensor along with thetransport of the generated charge to the photodiodes and, finally, to the generation of electronic signals.

Simulation Methods for Ionizing Radiation Single Event Effects Evaluation

The single-event effect evaluation technology for nano integrated circuits

Proposal of a Multiscale High Accuracy Engineering Approach for Single-Event Effects Analysis in Modern Technologies

Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Investigation of Single-Event Effects for Space Applications: Instrumentation for In-Depth System Monitoring

A Fast Simulation Method for Evaluating the Single-Event Effect in Aerospace Integrated Circuits

Single Event Effect Testing With Ultrahigh Energy Heavy Ion Beams

COMBINED SIMULATION METHODOLOGY FOR A COMPLETECHARACTERIZATION OF IONIZING RADIATION EFECTS IN DETECTION DEVICES

Simulation and Analysis of In-Orbit Applications under Radiation Effects on COTS Platforms

Modeling the effects of low-LET cosmic rays on electronic components

A Novel Integrated Approach for Simulation of Electromagnetic Susceptibility Problem

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Near-Field Scanning Based Shielding Effectiveness Analysis of System in Package

Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC

Space environments variability and its impact on total dose and single event effects in electronic parts

Simulation studies of Single Event Effects in Ga$_2$O$_3$ MOSFETs

Simulation of Particle-Material Interactions

SSRESF: Sensitivity-aware Single-particle Radiation Effects Simulation Framework in SoC Platforms based on SVM Algorithm

The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment