I-1 performance comparison of MOSLSI built using bulk and SOS technology

E. Sun

DOI: https://doi.org/10.1109/T-ED.1981.20514

IF: 3.1

1981-10-01

IEEE Transactions on Electron Devices

Abstract:

What problem does this paper attempt to address?

Simulation for a Novel Vertical SOI Configuration

J. Tong,X. Zou,X. B. Shen

DOI: https://doi.org/10.1016/j.vlsi.2005.05.001

IF: 1.345

2006-01-01

Integration

Abstract:A novel vertical SOI configuration has been simulated to improve the MOSFET scaling. The new structure combines the advantages of vertical MOSFET and SOI. The floating body effect of a usual SOI can be suppressed by an asymmetric source-drain configuration by connecting the source and the substrate. The optimizations on some structural parameters including silicon film thickness tsi, gate dielectric constant k and channel concentration Nb are done to improve the subthreshold characteristics and the output currents of the drain.
Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Yang Liu,Xufeng Wang,Mathieu Luisier,Mark Lundstrom

DOI: https://doi.org/10.1109/isdrs.2009.5378204

2009-01-01

Abstract:In this paper, numerical simulations were used to study the device physics in the In x Ga 1-x As MOSFETs with a gate length of 15 nm (initial) and 10 nm after optimizing the device structure. Key device metrics were identified at the ballistic limit using a 2-D Schrodinger-Poisson solver with effective masses imported from accurate tight-binding calculations. It was concluded that the simulation of a prototype for III-V quantum well MOSFETs with a gate length of 15 nm predicts decent performances if Si-matched series resistance can be obtained. The device has very high injection velocities, but suffers from significant S/D leakage under offstate. As a next step, the possibility of designing high-performance III-V MOSFETs at a gate length of 10 nm will be investigated.
Advantages and challenges of high performance CMOS on SOI

mario m pelella,w p maszara,s sundararajan,s p sinha,andy wei,d ju,william g en,s krishnan,d chan,s chan,pingcheng yeh,michael lee,dongping wu,mark b fuselier,r vanbentum,gert burbach,chowyang lee,ginel c hill,d greenlaw,c riccobenc,olov b karlsson,derick j wristers,n kepler

DOI: https://doi.org/10.1109/SOIC.2001.957957

2001-01-01

Abstract:The key performance advantages and challenges of SOI CMOS for ULSI applications are discussed in detail. Included is an insightful analysis comparing the performance benefits of SOI technologies over its bulk-Si counterpart. The hysteretic trends of a floating-body PD/SOI inverter circuit are uniquely characterized using a Teradyne J971 system; and the charge-dump and self-heating effects are shown to be under control using an advanced 0.13 /spl mu/m SOI device technology. Future technology opportunities are described that could provide a viable roadmap of SOI technologies to leverage in the future.
Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

林羲,董业民,何平,陈猛,王曦,田立林,李志坚

DOI: https://doi.org/10.3321/j.issn:1000-0054.2003.07.039

2003-01-01

Abstract:The drain and source on ins ul ator (DSOI) structure was proposed to suppress floating body effects (FBEs) and the severe self-heating effect in SOI devices, which are the main drawbacks of the SOI structure. The DSOI structure was investigated using a local oxygen imp lantation process to successfully fabricate DSOI, bulk-Si and SOI MOSFETs on th e same die. Measurements of their electrical and thermal characteristics showed that the DSOI devices successfully suppressed the FBEs and that the self-heatin g effect of the DSOI devices was much less than in the SOI devices. In addition the electrical advantages of the SOI devices over the bulk-Si devices remained in the DSOI devices because of the buried oxide layer below the drain and source region. Therefore, the DSOI devices combine the advantages of SOI and bulk-Si devices as promising designs for high-speed, low-power applications.
Performance of SiC Cascode Switches with Si MOS Gate

G Brezeanu,C Boianceanu,M Brezeanu,A Mihaila,F Udrea,G Amaratunga

DOI: https://doi.org/10.4028/www.scientific.net/msf.483-485.825

2005-01-01

Materials Science Forum

Abstract:The behavior of the MOS switch and of two cascode configurations are evaluated, by using OR-CAD simulations, and the resulting data are comparatively presented. By analytical and numerical investigations, the superior performance of the multiple cascode circuit is demonstrated.
High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Hongxiao Lin,Xing Zhao,Xue Luo,Yuanhao Miao,Yongkui Zhang,Zhenzhen Kong,Guilei Wang,Hong Yang,Zhenhua Wu,Yunfei Shi,Bin Lu,Linpeng Dong,Wenjuan Xiong,Renrong Liang,Jun Xu,Xuewei Zhao,Tianchun Ye,Henry H. Radamson

DOI: https://doi.org/10.1016/j.mssp.2023.108007

IF: 4.1

2024-01-01

Materials Science in Semiconductor Processing

Abstract:This paper presents a novel FDSOI FinFETs with SiGe channel/Si cap layer (35 nm/5 nm) formed on SOI wafers with 20 nm Si body. Electrical characterization result shows that JL FDSOI FinFETs with SiGe channel exhibited low subthreshold slope (SS) of 86 mV/decade and record high ON-OFF current ratio (I-ON/I-OFF = 2 x 10(6)) at V-D = -0.5V, respectively. Device performance improvement was mainly attributed to high-epitaxial quality compressive strained SiGe channel and novel device structure. The strain in the channel of the transistors was estimated locally in TEM using Nano beam diffraction (NBD) technique. The FDSOI FinFET with SiGe channel, lays the foundation for the further development of high speed, high density, low cost, and 3D monolithic integration circuits.
Performance Of Ligbts Built On Simox Substrates Using Double Epitaxial Layer Dielectric Isolation Technology

Ems Narayanan,G Amaratunga

DOI: https://doi.org/10.1109/ISPSD.1995.515038

1995-01-01

Abstract:In this paper, the measured characteristics of lateral power devices fabricated using the novel double epitaxial layer dielectric isolation (DELDI) technology is presented for the first time. The results show enhanced breakdown and on-state performance of lateral insulated gate bipolar transistors (LIGBTs) in DELDI technology in comparison to conventional SOI based structures
Comparison of different MOS-triggered SCR structures for on-chip ESD protection

Fei Ma,Yan Han,Bo Song,Shurong Dong,Meng Miao

DOI: https://doi.org/10.1109/ICCRD.2011.5764207

2011-01-01

Abstract:Three types of MOS-triggered SCR structures: Merged MOS-triggered SCR, compact MOS-triggered SCR and boundary-MOS-triggered SCR devices have been fabricated and compared in 0.13 μm CMOS process for on-chip ESD protection. TLP testing results show boundary-MOS-triggered SCR structures can achieve adjustable and lower switching voltage, smaller turn-on resistance, faster turn-on speed, the best ESD robustness and sufficient latch-up immunity compared with other MOS-triggered SCRs.
First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Yueyang Ma,Linpeng Dong,Penghui Li,Lanting Hu,Bin Lu,Yuanhao Miao,Bo Peng,Ailing Tian,Weiguo Liu

DOI: https://doi.org/10.1021/acsami.2c12266

IF: 9.5

2022-01-01

ACS Applied Materials & Interfaces

Abstract:The electronic properties of monolayer (ML) Ga2O3 and transport properties of ML Ga2O3-based n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated by first-principles calculations under the framework of density functional theory (DFT) coupled with the nonequilibrium Green's function (NEGF) formalism. The results show that ML Ga2O3 has a quasi-direct band gap of 4.92 eV, and the x- and y-directed electron mobilities are 1210 and 816 cm2 V-1 s-1 at 300 K, respectively, under the full consideration of phonon scattering. The electron-phonon scattering mechanism shows a temperature-dependent behavior, with the acoustic modes dominating below 300 K and optical modes dominating above 300 K. At a gate length of Lg = 5 nm, the on-current of ML Ga2O3 n-MOSFET for high-performance (HP) application is 2890 μA/μm, which is more than those of the most reported two-dimensional (2D) materials. The delay time as well as the power delay product of ML Ga2O3 MOSFETs can meet the demands of the latest International Technology Roadmap for Semiconductors (ITRS) for HP and low-power (LP) applications until Lg is less than 4 and 5 nm, respectively. Through underlap structure and doping optimization strategies, ML Ga2O3 n-MOSFET can further fulfill the ITRS requirements for 1 nm. At last, we compare the performance of the 32-bit arithmetic logic unit (ALU) built on ML Ga2O3 MOSFETs with the recently reported beyond-CMOS devices. Our results indicate that ML Ga2O3 can serve as a promising channel material in the post-silicon era.
Quasi-SOI MOSFETs—A Promising Bulk Device Candidate for Extremely Scaled Era

Yu Tian,Han Xiao,Ru Huang,Chuguang Feng,Mansun Chan,Baoqin Chen,Runsheng Wang,Xing Zhang,Yangyuan Wang

DOI: https://doi.org/10.1109/ted.2007.899401

IF: 3.1

2007-01-01

IEEE Transactions on Electron Devices

Abstract:Results from a novel quasi-SOI CMOS architecture fabricated on bulk Si are reported for the first time, demonstrating its viability as an alternative device for the nanometer regime. All of the processing is basically compatible with the conventional CMOS technology. The short-channel effects and the drain-induced barrier-lowering effects can be effectively suppressed by the "L-type" insulator surrounding the source/drain regions. In addition, quasi-SOI MOSFETs can be more tolerant of process-induced variation for the deep nanometer regime. The quasi-SOI MOSFET can be considered as one of the promising candidates for highly scaled devices.
Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

ChengKuei Lee,Jinyu Zhang,Yan Wang

DOI: https://doi.org/10.1109/CSTIC.2017.7919749

2017-01-01

Abstract:This paper adapts 3-D quantum transmission model to evaluate the performances of the junctionless (JL) FinFET devices for silicon-on-insulator (SOI) and bulk FinFET structures using high-k/materials as gate oxide dielectrics materials. Silicon dioxides (SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ), silicon nitride (Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> ), hafnium dioxide (HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) are used as the dielectric materials of the simulated JL FinFETs. Various device characteristics, such a subthreshold swing, drain-induced barrier lowering and On/Off current, are also explored under different gate lengths and fin widths. The simulated results reveal the device characteristic degrades with the gate length decreases from 20 to 10 nm dramatically under any configurations. The JL bulk transistor have greater performance than SOI structure under the short channel by adjusting the device's threshold voltage with the doping concentration of the substrate. Considering the transistor performance, HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is the only acceptable gate oxide dielectric material as the gate length is less than 14 nm.
Simulation and Optimization of High Performance On-Chip Solenoid MEMS Inductor

Shengrui Zhou,Ling Xu,Jicun Lu,Yinglin Yang

DOI: https://doi.org/10.1109/icept.2018.8480563

2018-01-01

Abstract:In this paper, we proposed a vertical spiral structure to realize high performance (high Q and high L) on-chip inductor based on MEMS technology. It aims to reduce the substrate loss by the approach of 3D vertical integration so that the quality factor of the on-chip inductors could be improved. In order to verify and explore the improvement of the quality factor of the vertical spiral solenoid structure, finite element method was used to analysis the performance of designed inductor, and an optimal solution was raised through modeling and simulation by commercial software HFSS. Combining the thermal oxidation process level, we tried to isolate silicon by 10um silicon dioxide isolation layer. Simulation results show that more than 10um silicon dioxide isolation layer no longer improves the inductive performance. The simulation results show that the same scalar-isolated vertical spiral inductors provide superior performance (peak Q = 32 @ 7 GHz, L=4nH). Compared with ordinary silicon planar inductors, the quality factor Q increased 30%, inductance L increased 100%. In addition, self-resonant frequency is greater than 10 GHz which makes our inductor could adapt to a wider spectrum of applications.
Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

H Xiao,Y Tian,X An,R Huang,YY Wang

DOI: https://doi.org/10.1088/0268-1242/20/9/007

IF: 2.048

2005-01-01

Semiconductor Science and Technology

Abstract:In this paper, a novel structure named as quasi-SOI MOSFET is proposed, which can combine the advantages of both SOI structure and bulk structure. In the quasi-SOI structure, the source/drain regions are quasi-surrounded with insulator and the channel region is directly connected with the bulk substrate. Short channel effects (SCE), parasitic capacitance and self-heating effects (SHE) can be well alleviated. A method to fabricate the quasi-SOI MOSFET is also put forward and realized by process simulation. Quasi-SOI devices can be realized with a channel formed by epitaxial technology and a buried oxide layer formed by thermal oxidation. Simulation results show good scaling capability and excellent heat dissipation. The drive current and the leakage current can be adjusted by changing the substrate doping for specific applications. Cut-off frequencies as high as 220 GHz for NMOS and 130 GHz for PMOS at 20 nm effective channel length (L-eff) can be obtained according to process simulation results.
Performance of Submicron and Deep-Submicron Conventional/ldd MOSFET

SUN Zimin,LIU Litian,LI Zhijian

DOI: https://doi.org/10.3321/j.issn:1000-0054.1999.z1.029

1999-01-01

Abstract:Conventional and LDD structured NMOSFET were fabricated. Results of simulation and practical measurement indicated that, if the device structure is appropriately designed to limit the value of I off in a acceptable range, MOSFET working in a carefully defined and relatively lowered voltage region will have better performance and smaller hot carrier effect than those of LDD MOSFET with same channel length. Meanwhile, one can get the advantage of the conventional structure with less area and reduced working power dissipation. It was shown that, the conclusion is true even for MOSFET with channel lengths of 0.5μn and 0.35μm, which are now in mass production using LDD structure.
Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Ping He,Bo Jiang,Xi Lin,Litian Liu,Lilin Tian,Zhijian LI,Yeming Dong,Meng Chen,Xi Wang

DOI: https://doi.org/10.3969/j.issn.1674-4926.2003.06.006

2003-01-01

Abstract:To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.
Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSix/CoSi2/Si Stack Interface

Bin Wang,Hao-Yu Kong,Lei Sun

DOI: https://doi.org/10.1088/0256-307x/37/3/038501

2020-01-01

Chinese Physics Letters

Abstract:A dual silicide layer structure is proposed for Schottky barrier metal-oxide-semiconductor field effect transistors (MOSFETs) on bulk substrates. The source/drain regions are designed to be composed with dual stacked silicide layers, forming different barrier heights to silicon channel. Performance comparisons between the dual barrier structure and the single barrier structure are carried out with numerical simulations. It is found that the dual barrier structure has significant advantages over the single barrier structure because the drive current and leakage current of the dual barrier structure can be modulated. Furthermore, the dual barrier structure's performance is nearly insensitive to the total silicide thickness, which can relax the fabrication requirements and even make an SOI substrate unnecessary for planar device design. The formation of ErSix/CoSi2 stacked multilayers has been proved by experiments.
Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

P He,B Jiang,X Lin,LT Liu,LL Tian,ZJ Li,YM Dong,M Chen,X Wang

DOI: https://doi.org/10.1016/s0038-1101(02)00466-5

IF: 1.916

2003-01-01

Solid-State Electronics

Abstract:To overcome the floating-body effect and self-heating effect of SOI devices, the drain and source on insulator (DSOI) structure [IEEE Int. Solid-State Integr. Circ. Technol. Conf. Proc., 1998, p. 575] is fabricated and tested. The recently developed low dose and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices. Using this method, DSOI, SOI and bulk MOSFETs are successfully integrated on a single chip. Test results show that the drain induced barrier lowering effect is greatly suppressed and the drain-to-source breakdown voltage is greatly increased for DSOI devices due to the elimination of the floating-body effect. And the self-heating effect is also reduced and thus the reliability increased. At the same time, the advantage of SOI devices in speed is maintained. The technology makes it possible to integrate low voltage, low power, low speed SOI devices and high voltage, high power, high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.
Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Yu Tian,Han Xiao,Ru Huang,Chuguang Feng,Mansun Chan,Xing Zhang,Yangyuan Wang

2006-01-01

Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.
Investigation of Edge- and Bulk-Related Resistive Switching Behaviors and Backward-Scan Effects in SiOx-based Resistive Switching Memory

Yao-Feng Chang,Li Ji,Yanzhen Wang,Pai-Yu Chen,Fei Zhou,Fei Xue,Burt Fowler,Edward T. Yu,Jack C. Lee

DOI: https://doi.org/10.1063/1.4829526

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Switching characteristics of edge and bulk device structures and an unusual backward-scan effect are investigated in SiOx-based resistive memory. Adding external resistance is found to dramatically affect reset voltage, providing insight into the unique unipolar operation. Non-edge, bulk SiOx-based devices allow flexibility in the fabrication process and hydrogen incorporation improves electroforming and device yield. A backward-scan phenomenon is examined by investigating the DC and AC pulse responses, which defines requirements for ON and OFF programming duration. Circuit-level simulation using a Verilog-A model aids device characterization and programming strategy development for future nonvolatile memory applications.
A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy

Jixiang Tan,Zhongfu Zhou,Gongjie Zou

DOI: https://doi.org/10.3390/electronics13224379

IF: 2.9

2024-11-09

Electronics

Abstract:Silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs), as a new material, have the advantages of low drain-source resistance, high thermal conductivity, low leakage current, and high switching frequency compared with silicon (Si)-based MOSFETs. Therefore, in many industrial applications, Si MOSFETs have been replaced by SiC MOSFETs. However, as the switching speed increases exponentially, some problems are amplified, the most serious of which is the overshoot of current and voltage. The increase in voltage and current slope caused by high switching speeds inevitably leads to overshoot, oscillations, and additional losses in the circuit. This paper focusses on the actual performance of the optimised switching strategy (OSS) in circuit testing and combines the existing simulation results to verify the practicability of OSS. In this paper, the optimised switching strategy is introduced first, and then, the LTspice model of SiC MOSFET is established in detail and verifies the feasibility of the OSS through half-bridge circuit simulation. Finally, the test platform is built using a programmable gate drive module (2ASC-12A1HP). Through a 400 V/30 A double-pulse test, the practicality of the OSS is verified. The experiments show that the OSS can greatly improve the switching performance of SiC MOSFETs.

engineering, electrical & electronic,computer science, information systems,physics, applied

I-1 performance comparison of MOSLSI built using bulk and SOS technology

Simulation for a Novel Vertical SOI Configuration

Simulation Study of Device Physics Issues in III&amp;#x2013;V MOSFETs at 10 Nm Node

Advantages and challenges of high performance CMOS on SOI

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Performance of SiC Cascode Switches with Si MOS Gate

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Performance Of Ligbts Built On Simox Substrates Using Double Epitaxial Layer Dielectric Isolation Technology

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Quasi-SOI MOSFETs—A Promising Bulk Device Candidate for Extremely Scaled Era

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

Simulation and Optimization of High Performance On-Chip Solenoid MEMS Inductor

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

Performance of Submicron and Deep-Submicron Conventional/ldd MOSFET

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Performance Analyses of Planar Schottky Barrier MOSFETs with Dual Silicide Layers at Source/Drain on Bulk Substrates and Material Studies of ErSix/CoSi2/Si Stack Interface

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Investigation of Edge- and Bulk-Related Resistive Switching Behaviors and Backward-Scan Effects in SiOx-based Resistive Switching Memory

A Programmable Gate Driver Module-Based Multistage Voltage Regulation SiC MOSFET Switching Strategy

Simulation Study of Device Physics Issues in III–V MOSFETs at 10 Nm Node