Imquimod 2.5% cream.

N. Scheinfeld

2013-07-01

SKINmed Dermatology for the Clinician

Abstract:

What problem does this paper attempt to address?

Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.

Jin Wang,Qing Cai,Jianming Lei,Guofeng Yang,Junjun Xue,Dunjun Chen,Bin Liu,Hai Lu,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1021/acsami.9b02192

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:We systematically study the device characteristics of the monolayer (ML) blue phosphorene metal-oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum-transport simulations. The ML blue phosphorene MOSFETs show superior performances with ultrashort-channel length. We first predict the ultrascaled ML blue phosphorene MOSFETs with proper doping concentration and underlap structures are compliant with the high-performance (HP) and low-power (LP) requirements of the International Technology Roadmap for Semiconductors in the next decade in the aspects of the on-state current, delay time, and power dissipation. Encouragingly, the performances of the ML blue phosphorene MOSFETs are superior to that of the MOSFETs based on arsenene, antimonene, InSe, etc. in terms of the on-state current at similar device size. We also consider the electron-phonon scattering in 10.2 nm gate ML blue phosphorene MOSFET. It is found that the on-state current with the scattering of the blue phosphorene device is degraded by 25.4 and 23.6% for HP and LP applications, which can also fulfill the HP and LP application target. Therefore, we can deduce that ML blue phosphorene is an alternative channel material to silicon for ultrascaled FETs if the large-scale and high-quality blue phosphorene can be achieved.
Electrical contacts in monolayer blue phosphorene devices

Jingzhen Li,Xiaotian Sun,Chengyong Xu,Xiuying Zhang,Yuanyuan Pan,Meng Ye,Zhigang Song,Ruge Quhe,Yangyang Wang,Han Zhang,Ying Guo,Jinbo Yang,Feng Pan,Jing Lu

DOI: https://doi.org/10.1007/s12274-017-1801-2

IF: 9.9

2018-03-19

Nano Research

Abstract:Semiconducting monolayer (ML) blue phosphorene (BlueP) shares similar stability with ML black phosphorene (BP), and it has recently been grown on an Au surface. Potential ML BlueP devices often require direct contact with metal to enable the injection of carriers. Using ab initio electronic structure calculations and quantum transport simulations, for the first time, we perform a systematic study of the interfacial properties of ML BlueP in contact with metals spanning a wide work function range in a field effect transistor (FET) configuration. ML BlueP has undergone metallization owing to strong interaction with five metals. There is a strong Fermi level pinning (FLP) in the ML BlueP FETs due to the metal-induced gap states (MIGS) with a pinning factor of 0.42. ML BlueP forms n-type Schottky contact with Sc, Ag, and Pt electrodes with electron Schottky barrier heights (SBHs) of 0.22, 0.22, and 0.80 eV, respectively, and p-type Schottky contact with Au and Pd electrodes with hole SBHs of 0.61 and 0.79 eV, respectively. The MIGS are eliminated by inserting graphene between ML BlueP and the metal electrode, accompanied by a transition from a strong FLP to a weak FLP. Our study not only provides insight into the ML BlueP–metal interfaces, but also helps in the design of ML BlueP devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Three-layer Phosphorene-Metal Interfaces

Xiuying Zhang,Yuanyuan Pan,Meng Ye,Ruge Quhe,Yangyang Wang,Ying Guo,Han Zhang,Yang Dan,Zhigang Song,Jingzhen Li,Jinbo Yang,Wanlin Guo,Jing Lu

DOI: https://doi.org/10.1007/s12274-017-1680-6

IF: 9.9

2017-01-01

Nano Research

Abstract:Phosphorene has attracted much attention recently as an alternative channel material in nanoscale electronic and optoelectronic devices due to its high carrier mobility and tunable direct bandgap. Compared with monolayer (ML) phosphorene, few-layer (FL) phosphorene is easier to prepare, is more stable in experiments, and is expected to form a smaller Schottky barrier height (SBH) at the phosphorene-metal interface. Using ab initio electronic structure calculations and quantum transport simulations, we perform a systematic study of the interfacial properties of three-layer (3L) phosphorene field effect transistors (FETs) contacted with several common metals (Al, Ag, Au, Cu, Ti, Cr, Ni, and Pd) for the first time. The SBHs obtained in the vertical direction from projecting the band structures of the 3L phosphorene-metal systems to the left bilayer (2L) phosphorenes are comparable with those obtained in the lateral direction from the quantum transport simulations for 2L phosphorene FETs. The quantum transport simulations for the 3L phosphorene FETs show that 3L phosphorene forms n-type Schottky contacts with electron SBHs of 0.16 and 0.28 eV in the lateral direction, when Ag and Cu are used as electrodes, respectively, and p-type Schottky contacts with hole SBHs of 0.05, 0.11, 0.20, 0.30, 0.30, and 0.31 eV in the lateral direction when Cr, Pd, Ni, Ti, Al, and Au are used as electrodes, respectively. The calculated polarity and SBHs of the 3L phosphorene FETs are generally in agreement with the available experiments.
Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals

Xu-Dong Huang,Qian Liu,Hai-Qing Xie,Xiao-Qing Deng,Zhi-Qiang Fan,Dan Wu,Ke-Qiu Chen

DOI: https://doi.org/10.1109/ted.2023.3307503

IF: 3.1

2023-10-01

IEEE Transactions on Electron Devices

Abstract:Enhancing the band-to-band tunneling (BTBT) is the most effective method to improve the performance of the tunnel field effect transistors (TFETs). In this article, the transport properties of monolayer blue phosphorene (BP) and transition metals Ag or Mn decorated BP 5-nm TFETs along the armchair edge (AE) or zigzag edge (ZE) transport directions were studied by using density functional theory and non-equilibrium Green’s function formalism. The transfer charges between metal atoms and BP will induce the new energy bands to modulate the band structure of BP effectively. The ON-state currents of monolayer BP TFET are just 113 and $77~\mu \text{A}/\mu \text{m}$ along the AE or ZE transport directions. The adsorption Mn atom can induce band gap states, and ON-state currents of Mn-decorated TFET along the AE or ZE transport directions can be improved to 616 and $646~\mu \text{A}/\mu \text{m}$ , respectively. Although the band gap states induced by adsorbed Ag atom are less than those induced by adsorbed Mn atom, ON-state currents of Ag-decorated TFET along the AE or ZE transport directions could reach to 972 and $1308~\mu \text{A}/\mu \text{m}$ , which both meet the requirement of high performance (HP) logic applications for the next decade in the International Technology Roadmap for Semiconductors (ITRS). In addition, ON-state currents of Ag-decorated TFET including phonon-assisted tunneling along the AE and the ZE transport directions further increase to 1003 and $1823~\mu \text{A}/\mu \text{m}$ , and better meet the HP requirements in ITRS.

engineering, electrical & electronic,physics, applied
Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Ruge Quhe,Qiuhui Li,Qiaoxuan Zhang,Yangyang Wang,Han Zhang,Jingzhen Li,Xiuying Zhang,Dongxue Chen,Kaihui Liu,Yu Ye,Lun Dai,Feng Pan,Ming Lei,Jing Lu

DOI: https://doi.org/10.1103/physrevapplied.10.024022

IF: 4.6

2018-01-01

Physical Review Applied

Abstract:Two-dimensional (2D) semiconductors, e.g., MoS2 and phosphorene, are promising candidates for the channel materials of next-generation field-effect transistors (FETs). Although 2D MoS2 FETs with the gate length L-g scaled down to 1 nm have been fabricated with a quite small threshold swing, they suffer from a rather low ON current and are unsuitable for a high-performance device. Herein, we simulate sub-5-nm monolayer (ML) phosphorene MOSFETs using ab initio quantum-transport simulations. We predict that the ON current, delay time, and power dissipation indicator of the sub-5-nm double-gated ML phosphorene MOSFETs with proper underlap structure can fulfill the requirements of the international technology roadmap for semiconductors for both high-performance (along both the armchair and zigzag directions) and low-power (along the zigzag direction) devices in 2028 until L-g is scaled down to 2 nm. Therefore, phosphorene is more suitable for ultrascaled FETs than 2D MoS2 in the post-silicon era as far as the ON current is concerned.
Two-Dimensional Pnictogen for Field-Effect Transistors

Wenhan Zhou,Jiayi Chen,Pengxiang Bai,Shiying Guo,Shengli Zhang,Xiufeng Song,Li Tao,Haibo Zeng

DOI: https://doi.org/10.34133/2019/1046329

IF: 11

2019-10-30

Research

Abstract:Two-dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group-VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next-generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.

multidisciplinary sciences
The herpes simplex virus 1 UL 17 gene is required for localization of capsids and major and minor capsid proteins to intranuclear sites where viral DNA is cleaved and packaged.

Naomi S. Taus,B. Salmon,J. Baines

DOI: https://doi.org/10.1006/VIRO.1998.9439

IF: 3.513

1998-12-05

Virology

Abstract:In nuclei of cells infected with herpes simplex virus (HSV), synthesized viral DNA accumulates as concatamers that are cleaved into genomic lengths and inserted into preformed capsids. Whereas newly replicated DNA and enzymes required for DNA synthesis accumulate in sites of infected cell nuclei termed replication compartments, the intranuclear site of DNA cleavage and packaging is currently controversial. DNA packaging requires the UL6, UL15, UL17, UL25, UL28, UL32, and UL33 genes in addition to the major capsid proteins. Using confocal immunofluorescence microscopy, it was observed that in > 95% of HEp-2 cells fixed at late times after infection with wild-type HSV-1, capsids, major capsid proteins ICP5 and ICP35, and the UL6-encoded minor capsid protein localized in DNA replication compartments. These data support the hypothesis that capsid assembly and DNA cleavage/packaging normally occur in HEp-2 cell replication compartments. In contrast, cells infected with a viral mutant lacking functional UL17 contained antigenically dense nuclear aggregates that stained with ICP35, ICP5, and capsid specific antibodies. Cells infected with the UL17 mutant virus also displayed UL6-specific fluorescence in a diffuse pattern at the nuclear periphery in regions not containing ICP35 and ICP5. Displacement of ICP35 from replication compartments was not observed in cells infected with cleavage/packaging mutants lacking UL28 and UL33. We conclude that the UL17 gene is required for correct targeting of capsids and major and minor capsid proteins to the DNA replication compartment of HEp-2 cells and deduce that this targeting reflects one functional role of UL17 in viral DNA cleavage and packaging.
Schottky Barriers in Bilayer Phosphorene Transistors

Yuanyuan Pan,Yang Dan,Yangyang Wang,Meng Ye,Han Zhang,Ruge Quhe,Xiuying Zhang,Jingzhen Li,Wanlin Guo,Li Yang,Jing Lu

DOI: https://doi.org/10.1021/acsami.6b16826

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.
Realization of Fermi level unpinning and high-quality p-type contacts for 2D β-TeO 2 by a built-in intercalation

Xiaodong Zhang,Liping Feng,Huanyong Li,Yifan Liu,Pengfei Liu,Xiaoqi Zheng,Mingyang Qu,Xitong Wang,Jun He

DOI: https://doi.org/10.1016/j.mtnano.2023.100392

IF: 10.3

2023-08-17

Materials Today Nano

Abstract:Contriving an industry-compatible method for fabricating purely high-quality p-type two-dimensional (2D) field effect transistors (FETs) has been proved to be pressing but challenging due to the strong interfacial coupling and thus tight Fermi level pinning (FLP). Herein, by employing density functional theory calculations, a straightforward but effective strategy is proposed to achieve high-quality p-type contact in few-layer TeO 2 –Pt junction by using a build-in intercalation to suppress the FLP and shield the damage from electrodes to the excellent electrical properties of TeO 2 such as its ultra-high hole mobility. Specifically, the increase of TeO 2 layer number will make the charge distribution of VBM and CBM be more lumped in the inner core layer, as a result, the outlying Te–O sublayer can act as an inserting layer like BN to protect the semiconducting electronic states and avoid gap-state pinning. Thus, as the TeO 2 layer increases from 1 L to 3 L, (I) strong FLP in metal-TeO 2 interfaces is gradually unpinned; (II) the polarity of Pt–TeO 2 contact reverses from n-type to p-type; (III) the excellent electrical properties of TeO 2 such as hole effective mass is preserved as original despite strong charge transfer occurring at the interface. Besides, the tunnelling barrier at the interface is close to zero. This is quite different from introducing an extern BN intercalation, in which case the tunnelling through BN will prominently reduce the overall hole current. In addition, the contacts between 2D metal electrodes and monolayer TeO 2 are found to obey the Schottky-Mott rule, and thereby p-type Ohmic contacts can be obtained at TeO 2 -VS 2 , NbS 2 interfaces. Whereas, a relatively large tunnelling barrier exists at the 2D metal-TeO 2 interfaces. Our findings are quite essential and beneficial for designing high-performance p-type 2D FETs.

materials science, multidisciplinary,nanoscience & nanotechnology
Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

Pengpeng Sang,Qianwen Wang,Wei Wei,Lu Tai,Xuepeng Zhan,Yuan Li,Jiezhi Chen

DOI: https://doi.org/10.1109/ted.2021.3138362

IF: 3.1

2022-04-01

IEEE Transactions on Electron Devices

Abstract:To provide fully CMOS-compatible 2-D materials, novel silicon atomic-layer-based field-effect transistors (FETs) are investigated thoroughly in this work, with a focus on three 2-D silicon semiconductors hybrid honeycomb-kagome silicene (hhk-Si), large honeycomb dumbbell silicene (LHD-Si), and honeycomb dumbbell silicene (HD-Si). Based on first-principles and ballistic quantum transport simulations (QSTs), we unveil the intrinsic transport properties of the proposed 2-D silicon semiconductors, and benchmark with bulk-silicon and monolayer MoS2. More importantly, we gain an in-depth insight into electrode contact issues and device performance of LHD-Si-based Schottky-barrier (SB) FETs with different metal electrodes. Both the monolayer hhk-Si and LHD-Si exhibit excellent intrinsic transport properties, and a large ON/OFF ratio (${I} _{ ext{on}} / {I} _{ ext{off}}$ ) over 105 (${I} _{ ext{on}}$ approaching 103 $mu ext{A} / mu ext{m}$ ) can be achieved in the hhk-Si MOSFET. Moreover, with proper metal electrodes, the LHD-Si SB-FET can realize SB-free injection (Ohmic contact) and sub-thermal switching (cold-source). The LHD-Si SB-FET achieves a large ${I} _{ ext{on}}$ of 545–$660 mu ext{A} / mu ext{m}$ for Bi and Al electrodes, and a steep subthreshold swing of 48–51 mV/dec for NbTe2 and TaTe2 electrodes. This work demonstrates the promising application of 2-D silicon semiconductors in ultra-scaled FETs and the potential contact issues of metal electrodes.

engineering, electrical & electronic,physics, applied
The Study of Ambipolar Behavior in Phosphorene Field-Effect Transistors

Cheng Guo,Lin Wang,Huaizhong Xing,Xiaoshuang Chen

DOI: https://doi.org/10.1063/1.4970851

IF: 2.877

2016-01-01

Journal of Applied Physics

Abstract:The electrical characteristics of phosphorene field effect transistors (FETs) were investigated with the two-dimensional (2D) numerical simulation. In this study, it is found that the Schottky barrier plays an important role in the ambipolar transfer characteristics of phosphorene-based FETs. It is demonstrated that when the barrier heights are equal between electron and hole doping, the ambipolar current output dominates across the whole bias range. In the meantime, the saturation leakage current output of the transfer characteristic is only determined by the number of phosphorene layers or the bandgap rather than the Schottky barrier height between phosphorene and metal contact. The ambipolar behaviors become more pronounced as the channel lengths of transistors are decreased, all the geometric and material parameters are taken into account to improve the ambipolar output and understanding its underlying mechanisms. The presented results open the path to design phosphorene-based logic device, photo detector with low dark current for both electronic and optoelectronic applications.
Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts

Chen Yang,Xiuying Zhang,Xiaotian Sun,Han Zhang,Hao Tang,Bowen Shi,Hua Pang,Linqiang Xu,Shiqi Liu,Jie Yang,Jiahuan Yan,Lin Xu,Zhiyong Zhang,Jinbo Yang,Dapeng Yu,Jing Lu

DOI: https://doi.org/10.1002/pssb.201900198

2019-01-01

physica status solidi (b)

Abstract:2D semiconductor materials are promising channel materials in the next generation of field‐effect transistors (FETs). Recently, 2D In2Se3 has been fabricated and predicted to present planar direction‐dependent electrical properties. Herein, ab initio quantum transport simulations are used to explore the interfacial properties between monolayer (ML) In2Se3 and a series of common metal electrodes in a FET. By reversing the planar direction of ML In2Se3, different lateral interfacial properties are obtained: A highly desirable n‐type ohmic contact is shaped between Au and up‐directed ML In2Se3; however, a p‐type Schottky contact appears when the direction is switched. In addition, Ag can generate desirable lateral n‐type ohmic contact with both the directions of ML In2Se3. A reversion from n‐ to p‐type lateral Schottky contact occurs in both In and Sc when the direction switches from up to down. Down‐directed ML In2Se3 is dynamically unstable with the Pt and transforms into up‐direction to form a p‐type ohmic contact. The average pinning factor is 0.12 and 0.09 for up‐and down‐directed ML In2Se3, respectively, implying a strong Fermi‐level pinning. Therefore, the planar direction‐dependent interfacial properties of ML In2Se3–metal contacts are understood deeply, which can be exploited for the ML In2Se3 FET devices.
Popcorn primary colonic phytobezoar.

R. Roberge,N. S. Squyres,T. Macmath

DOI: https://doi.org/10.1016/S0196-0644(88)80510-9

IF: 6.762

Annals of Emergency Medicine

Abstract:
Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Liujian Qi,Mengqi Che,Mingxiu Liu,Bin Wang,Nan Zhang,Yuting Zou,Xiaojuan Sun,Zhiming Shi,Dabing Li,Shaojuan Li

DOI: https://doi.org/10.1039/d3nr02466k

IF: 6.7

2023-07-21

Nanoscale

Abstract:With the advantage of moderate band gap, high carrier mobility and good environmental stability, two-dimensional (2D) semiconductor shows promising applications in next-generation electronics. However, the accustomed metal-2D semiconductor contact may lead to strong Fermi level pinning (FLP) effect, which severely limits the practical performance of 2D electronics. Herein, the interfacial properties of the contacts between a promising 2D semiconductor, PtSe2, and a sequence of metal electrodes are systematically investigated. The strong interfacial interactions formed in all metal-PtSe2 contacts lead to chemical bonds and significant interfacial dipole, resulting in vertical Schottky barrier for Ag, Au, Pd and Pt based systems, however, lateral Schottky barrier for Al, Cu, Sc and Ti based systems, with strong FLP effect. Remarkably, the tunneling probability for most metal-PtSe2 are significantly high and the tunneling-specific resistivity is two orders of magnitude lower than the state-of-the-art contacts, demonstrating the high efficiency for the electron injection from metal to PtSe2. Moreover, the introduction of h-BN as buffer layer leads to the weakened FLP effect (S = 0.50) and the transformation into p-type Schottky contact for Pt-PtSe2 contact. These results reveal the underlying mechanism of the interfacial properties of metal-PtSe2 contacts, which is useful for designing advanced 2D semiconductor-based electronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Ohmic Contacts of Monolayer Tl 2 O Field-Effect Transistors

Yuanyuan Pan,Jingrou Dai,Zihui Liu,Mingbo Wu,Han Hu,Jing Lu

DOI: https://doi.org/10.1007/s10853-020-04866-2

IF: 4.5

2020-01-01

Journal of Materials Science

Abstract:Monolayer (ML) Tl 2 O, as a newly discovered metal-shrouded two-dimensional semiconductor with an appropriate bandgap and high carrier mobility, is a promising candidate as the channel materials for the next-generation field-effect transistors (FETs). Using ab initio electronic structure calculation and quantum transport simulation, the contact properties of ML Tl 2 O–metal interfaces based on FET are comprehensively investigated with Au, Sc, Tl, Ni, graphene, Ti 2 C, Ti 2 CF 2 , and Ti 2 C(OH) 2 electrodes. ML Tl 2 O undergoes metallization with Au, Sc, Tl, Ni, and Ti 2 C, while it forms van der Waals-type contact with graphene, Ti 2 CF 2 , and Ti 2 C(OH) 2 . An n -type lateral Schottky contact is formed with Ni, Au, Sc, and Ti 2 C electrodes with the electron Schottky barrier height (SBH) of 0.25, 0.27, 0.27, and 0.36 eV, respectively, while a p -type lateral Schottky contact is formed with graphene electrode with the hole SBH of 0.10 eV. Surprisingly, a desired n -type Ohmic contact arises with Tl and Ti 2 C(OH) 2 electrodes and a desired p -type Ohmic contact arises with Ti 2 CF 2 electrode. The study not only provides a deep understanding of the interfacial properties of the ML Tl 2 O FETs but also reveals a versatile approach to realize both n - and p -type Ohmic contact for the ML Tl 2 O FETs.
Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Wenhan Zhou,Shengli Zhang,Shiying Guo,Yangyang Wang,Jing Lu,Xing Ming,Zhi Li,Hengze Qu,Haibo Zeng

DOI: https://doi.org/10.1103/PhysRevApplied.13.044066

IF: 4.6

2020-01-01

Physical Review Applied

Abstract:In the post-Moore era, improving energy efficiency is an urgent requirement for microelectronics moving towards the Internet of Things, artificial intelligence, and 5G. In particular, two-dimensional (2D) materials with natural passivation, gate electrostatics, and high mobility have attracted significant attention for integrated circuits in the race towards next-generation field-effect transistors (FETs). Here, by coupling first-principles and nonequilibrium-Green's-function approaches, we obtain a physical understanding of the ballistic transport properties of a V-V binary bismuth nitride (BiN) material. Promisingly, monolayer BiN has sharp conduction-band and flat valence-band edges, which exhibit disparate effective masses. Simulated sub-10-nm monolayer BiN transistors show potential device performance and fulfill the high-performance and low-power requirements of the goals of the International Technology Roadmap for Semiconductors 2028 with their optimal parameters. Furthermore, by comprehensively analyzing the effective mass, density of states, on-state current, subthreshold swing, etc., we show that materials whose band dispersions have an extreme character have advantages for transistors. Also, benchmarking of the energy-delay product confirms that BiN FETs possess sufficient competitiveness against other 2D FETs. We believe that this could be a guide for designing potential channel materials for next-generation FETs.
Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

Tarek A. Ameen,Hesameddin Ilatikhameneh,Gerhard Klimeck,Rajib Rahman

DOI: https://doi.org/10.1038/srep28515

2015-12-16

Abstract:2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m*) outside the optimum range needed for high performance. It is shown here that the newly discovered 2D material, few-layer phosphorene, has several properties ideally suited for TFET applications: 1) direct Eg in the optimum range ~1.0-0.4 eV, 2) light transport m* (0.15m0), 3) anisotropic m* which increases the density of states near the band edges, and 4) a high mobility. These properties combine to provide phosphorene TFET outstanding ION 1 mA/um, ON/OFF ratio~1e6, scalability to 6 nm channel length and 0.2 V supply voltage, thereby significantly outperforming the best TMD-TFETs in energy-delay products. Full-band atomistic quantum transport simulations establish phosphorene TFETs as serious candidates for energy-eficient and scalable replacements of MOSFETs.

Mesoscale and Nanoscale Physics
Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces

Lianqiang Xu,Shiqi Liu,Jie Yang,Bowen Shi,Yuanyuan Pan,Xiuying Zhang,Hong Li,Jiahuan Yan,Jingzhen Li,Jinbo Yang,Jing Lu

DOI: https://doi.org/10.1021/acs.jpcc.8b12278

2019-01-01

Abstract:Due to their outstanding gate electrostatics, two-dimensional (2D) semiconducting materials are regarded as promising channel materials used in the next-generation field-effect transistors (FETs). However, a Schottky barrier often existing at the 2D semiconductor-metal interface can evidently degrade the device performance. Very lately, 2D layered semiconducting bismuth oxyselenide (Bi2O2Se) is synthesized and exhibits high carrier mobility and excellent air stability. We conduct a systematic exploration, for the first time, on the interfacial nature of bilayer (BL) Bi2O2Se in contact with six metals (Sc, Ti, Ag, Au, Pd, and Pt) that cover a wide work function range by density functional theory-based band structure calculations and quantum transport simulations in a FET configuration. Remarkably, our results reveal that all the contacts in the lateral direction are n-type Ohmic due to the robust beyond-gap Fermi level pinning at the interface. Experimentally, the actual BL Bi2O2Se FET with a Au/Pd electrode indeed shows an n-type Ohmic contact. Hence, low contact resistance can easily be expected in BL Bi2O2Se devices.
Device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors

Xingyi Tan,Qiang Li,Dahua Ren,Huahua Fu

DOI: https://doi.org/10.1039/d3nr03974a

IF: 6.7

2023-11-22

Nanoscale

Abstract:To break the scaling restriction on silicon-based field-effect transistors (FETs), two-dimensional (2D) transition metal dichalcogenides (TMDs) have been strongly proposed as alternative materials. To explore the device-scale-efficiency limit of TMD-based FETs, in this work, the ab initio quantum transport approach is utilized to study the transport properties of monolayer VTe2/WTe2 heterojunctions-based FETs supplied by double gates (DGs) with a 5-nm gate length (Lg). Our theoretical simulations demonstrate that the DG-cold-source VTe2/WTe2 FETs with 5-nm Lg and 2- or 3-nm proper underlap (UL) meet the basic requirements on the on-state current (Ion), power dissipation (PDP), and delay time (τ) for the 2028 needs of the International Technology Roadmap for Semiconductor (ITRS) 2013, which ensure their high-performance and low-power-dissipation device applications. Moreover, the DG-cold-source VTe2/WTe2-based FETs with 3-nm Lg and 2- or 3-nm UL meet the requirements on Ion, τ, and PDP for the 2028 needs of ITRS 2013. Additionally, by considering further the negative capacitance technology in devices, the parameters τ, Ion and PDP of the VTe2/WTe2-based FETs with 1-nm Lg and UL=3 nm meet well the needs for ITRS 2013 towards the device applications in the 2028 horizon. Our theoretical results uncover that the 2D DG-cold-source VTe2/WTe2 FETs can be worked as a new kind of promising material candidates to drive the scaling Moore's law down to 1 nm.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
High-performance sub-10-nm monolayer black phosphorene tunneling transistors

Hong Li,Jun Tie,Jingzhen Li,Meng Ye,Han Zhang,Xiuying Zhang,Yuanyuan Pan,Yangyang Wang,Ruge Quhe,Feng Pan,Jing Lu

DOI: https://doi.org/10.1007/s12274-017-1895-6

IF: 9.9

2018-01-01

Nano Research

Abstract:Moore’s law is approaching its physical limit. Tunneling field-effect transistors (TFETs) based on 2D materials provide a possible scheme to extend Moore’s lawdown to the sub-10-nm region owing to the electrostatic integrity and absence of dangling bonds in 2D materials. We report an ab initio quantum transport study on the device performance of monolayer (ML) black phosphorene (BP)TFETs in the sub-10-nm scale (6–10 nm). Under the optimal schemes, the ML BP TFETs show excellent device performance along the armchair transport direction.The on-state current, delay time, and power dissipation of the optimal sub-10-nm ML BP TFETs significantly surpass the latest International Technology Roadmap for Semiconductors (ITRS) requirements for high-performance devices. The subthreshold swings are 56–100 mV/dec, which are much lower than those of their Schottky barrier and metal oxide semiconductor field-effect transistor counterparts.

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Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.

Electrical contacts in monolayer blue phosphorene devices

Three-layer Phosphorene-Metal Interfaces

Transport Properties of 5-nm Tunnel Field-Effect Transistor for High-Performance Switches Decorated With Blue Phosphorene and Transition Metals

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Two-Dimensional Pnictogen for Field-Effect Transistors

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Schottky Barriers in Bilayer Phosphorene Transistors

Realization of Fermi level unpinning and high-quality p-type contacts for 2D β-TeO 2 by a built-in intercalation

Two-Dimensional Silicon Atomic Layer Field-Effect Transistors: Electronic Property, Metal-Semiconductor Contact, and Device Performance

The Study of Ambipolar Behavior in Phosphorene Field-Effect Transistors

Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts

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Mechanistic Understanding of the Interfacial Properties of Metal-PtSe2 Contacts

Ohmic Contacts of Monolayer Tl 2 O Field-Effect Transistors

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces

Device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors

High-performance sub-10-nm monolayer black phosphorene tunneling transistors