Abstract:Despite the widespread use of charge-trap flash (CTF) memory, the atomistic mechanism behind the exceptionally stable charge storage at the localized trap sites is still controversial. Herein, by combining first-principles calculations and orbital interaction analysis, a charge-dependent switchable chemical-bond reorganization is elucidated as the underpinning chemistry in the working mechanism of CTF. Especially, positively charged fourfold-coordinated nitrogen (dubbed N+ center), unappreciated until now, is the decisive component of the entire process; once an electron occupies this site, the N+ center disappears by breaking one N─Si bond, simultaneously forming a new Si─Si bond with a nearby Si atom which, in turn, creates fivefold coordinated Si. As a result, the electron is stored in a multi-center orbital belonging to multiple atoms including the newly formed Si─Si bond. It is also observed that hole trapping accompanies the creation of an N+ center by forming a new N─Si bond, which represents the reverse process. To further support and validate this model by means of core-level calculations, it is also shown that an N+ center's 1s core level is 1.0-2.5 eV deeper in energy than those of the threefold coordinated N atoms, in harmony with experimental X-ray photoelectron spectroscopy data.

Switchable Chemical-Bond Reorganization for the Stable Charge Trapping in Amorphous Silicon Nitride

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Charge Storage in Nitrided Nanocrystalline Silicon Dots

Charge Storage in Si-nanocrystals Embedded NOS Structure Characterized by Kelvin Probe Force Microscopy

Atomistic structure of amorphous silicon nitride from classical molecular dynamics simulations

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Simulation of Charge Trapping Memory with Novel Structures

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High- K Dielectric Multilayer Structure

Toward Long-Term Retention-Time Single-Electron-memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Memory Effect in Silicon Nitride in Silicon Devices

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Formation of a Positive Fixed Charge Atc−si(111)/a−si3n

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory