Abstract:The increasing prevalence of integrated on-chip optoelectronic devices has identified serious issues regarding inter-device transmission and coupling losses, highlighting an urgent need for on-chip waveguide amplifiers to compensate for these losses. Compared with other Er-based optical materials, erbium silicate is ideally suited to high-efficiency on-chip amplifiers and lasers because of its extremely high Er 3+ concentration (10 22 cm −3 ). Nevertheless, erbium silicate must be annealed above 1000°C to crystallize and activate the Er 3+ , which damages other on-chip optoelectronic components and is not conducive to device integration. Here, we report a low-fabrication-temperature, high-luminescence-efficiency gain material by adding Bi 2 O 3 to an erbium-ytterbium silicate mixed film. Our experiments demonstrate that the proposed film crystallizes at 600° C while the activation of Er 3+ is also achieved, which is the lowest activation temperature of on-chip waveguide amplifier to our knowledge. This material forms the basis for a new chip-scale waveguide amplifier design, with a theoretical multi-energy-level model of Bi-Er-Yb in the mixed thin films used to analyze its signal enhancement properties. We achieve a peak on-chip gain of 23 dB in a 3.3-mm-long waveguide under the pump and signal powers of 300 mW and 1 µW, respectively. These results highlight the potential of the proposed material for realizing on-chip amplifiers and lasers for large-scale nanophotonic integrated circuits.

On-chip Er-doped Ta2O5 waveguide amplifiers with a high internal net gain

On-chip Er-doped Ta_2O_5 waveguide amplifiers with a high internal net gain

Erbium-doped Ga2O3 waveguide for optical amplification

High on-chip gain spiral Al2O3:Er3+ waveguide amplifiers

Er–Tm co-doped materials for on-chip ultra-broadband waveguide amplifier

Toward a10 dB net-gain waveguide amplifier in an Er3+-Yb3+ co-doped phosphate glass

A high-gain cladded waveguide amplifier on erbium doped thin-film lithium niobate fabricated using photolithography assisted chemo-mechanical etching

On-chip Integrated Few-Mode Erbium–ytterbium Co-Doped Waveguide Amplifiers

Toward a 10 Db Net-Gain Waveguide Amplifier in an Er3+-Yb3+ Co-Doped Phosphate Glass

Synthesis and study of novel erbium-doped La2O3-Al2O3 glasses for on-chip waveguide amplifier

Erbium-Doped Lithium Niobate Thin Film Waveguide Amplifier with 16 Db Internal Net Gain

Study on Er3+-Yb3+ co-doped La2O3–Al2O3 glasses for C-band optical waveguide amplifier with high luminous efficiency and low pump threshold

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with a 27 dB internal net gain

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with 27 dB internal net gain

High-gain Erbium Silicate Waveguide Amplifier and a Low-Threshold, High-Efficiency Laser.

A Low-Fabrication-Temperature Erbium-Based Waveguide Amplifier

Erbium-Ytterbium Co-doped Tantalum Pentoxide As a Gain Material for Silicon-based Optoelectronics

A low-fabrication-temperature, high-gain chip-scale waveguide amplifier

An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW

Erbium-doped Lithium Niobate Waveguide Amplifier with Internal Net Gain Exceeding 20 Db

Erbium-ytterbium co-doped aluminium oxide waveguide amplifiers fabricated by reactive co-sputtering and wet chemical etching