Abstract:Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode and moderate propagation loss, gain and power scaling in such integrated micro-to-nanoscale devices prove to be more challenging compared to their bulk counterparts. In this work, stimulated by the prevalent success of double-cladding optical fiber in high-gain/power operation, a Ta2O5 cladding is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemomechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ~980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.

A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator

On-chip Integrated Waveguide Amplifiers on Erbium-doped Thin Film Lithium Niobate on Insulator

Efficient erbium-doped thin-film lithium niobate waveguide amplifiers

Integrated Erbium-Doped Waveguide Amplifier on Lithium Niobate on Insulator

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with 27 dB internal net gain

Erbium-Doped Lithium Niobate Thin Film Waveguide Amplifier with 16 Db Internal Net Gain

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with a 27 dB internal net gain

On-chip Ytterbium-Doped Lithium Niobate Waveguide Amplifiers with High Net Internal Gain

High-gain Erbium-doped Waveguide Amplifier on LNOI Platform

A high-gain cladded waveguide amplifier on erbium doped thin-film lithium niobate fabricated using photolithography assisted chemo-mechanical etching

On-chip erbium-doped lithium niobate waveguide amplifiers

Highly efficient on-chip erbium-ytterbium co-doped lithium niobate waveguide amplifiers

Integrated spiral waveguide amplifiers on erbium-doped thin-film lithium niobate

On-chip Erbium-Doped Lithium Niobate Waveguide Amplifiers [Invited]

Erbium-Doped Lithium Niobate Waveguide Amplifier

A High-Gain Cladded Erbium-Doped LNOI Waveguide Amplifier Fabricated by PLACE

An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW

On-chip erbium-doped lithium niobate microcavity laser and spiral waveguide amplifier

On-chip integrated Yb3+-doped waveguide amplifiers on thin film lithium niobate

High-gain optical parametric amplification with continuous-wave pump using domain-engineered thin film lithium niobate waveguide

Erbium-doped LNOI As a Gain Platform for Integrated Optics