Abstract:Waveguide amplifiers have always been significant key components for optical communication. Unfortunately, the low concentration of rare earth ions doped in the host material and the inadequate optimization of the waveguide structure have been the common bottleneck limitations. Here, a novel material, NaYF4/NaLuF4: 20% Yb3+, 2% Er3+ nanoparticle-Polymeric Methyl Methacrylate covalent-linking nanocomposite, was synthesized. The concentrations of Er3+ and Yb3+ doping increased an order of magnitude. Under a 980 nm laser excitation, highly efficient emission at 1.53 μm was obtained. The characteristic parameters of the single mode waveguide were carefully designed and optimized by using a finite difference method. A formulized iteration method is presented for solving the rate equations and the propagation equations of the EYCDWA, and both the steady state behavior and the gain were numerically simulated. The optimal Er3+ and Yb3+ concentrations are 2.8 × 1026 m−3 and 2.8 × 1027 m−3, and the optimal waveguide length is 1.3 cm. Both theoretical and experimental results indicated that, for an input signal power of 0.1 mW and a pump power of 400 mW, a net gain of 15.1 dB at 1530 nm is demonstrated. This result is the highest gain ever reported in polymer-based waveguide amplifiers doped with inorganic Er3+-Yb3+ codoped nanocrystals.

On-chip integrated Yb3+-doped waveguide amplifiers on thin film lithium niobate

On-chip Ytterbium-Doped Lithium Niobate Waveguide Amplifiers with High Net Internal Gain

On-chip Integrated Waveguide Amplifiers on Erbium-doped Thin Film Lithium Niobate on Insulator

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with a 27 dB internal net gain

On-chip erbium-doped lithium niobate waveguide amplifiers

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with 27 dB internal net gain

Efficient erbium-doped thin-film lithium niobate waveguide amplifiers

On-chip Erbium-Doped Lithium Niobate Waveguide Amplifiers [Invited]

Highly efficient on-chip erbium-ytterbium co-doped lithium niobate waveguide amplifiers

A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator

Integrated spiral waveguide amplifiers on erbium-doped thin-film lithium niobate

An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW

Erbium-Doped Lithium Niobate Thin Film Waveguide Amplifier with 16 Db Internal Net Gain

On-chip erbium-doped lithium niobate microcavity laser and spiral waveguide amplifier

Integrated Erbium-Doped Waveguide Amplifier on Lithium Niobate on Insulator

A high-gain cladded waveguide amplifier on erbium doped thin-film lithium niobate fabricated using photolithography assisted chemo-mechanical etching

Erbium-ytterbium co-doped aluminium oxide waveguide amplifiers fabricated by reactive co-sputtering and wet chemical etching

On-chip Microdisk Laser on Yb3+-doped Thin-Film Lithium Niobate

Gain Optimization of Lithium Niobate Ridge Waveguide Amplifiers

Erbium-Doped Lithium Niobate Waveguide Amplifier

High-gain Polymer Optical Waveguide Amplifiers Based on Core-Shell NaYF4/NaLuF4: Yb3+, Er3+ NPs-PMMA Covalent-Linking Nanocomposites.