On-chip Ytterbium-Doped Lithium Niobate Waveguide Amplifiers with High Net Internal Gain

Yuqi Zhang,Qiang Luo,Shuolin Wang,Dahuai Zheng,Shiguo Liu,Hongde Liu,Fang Bo,Yongfa Kong,Jingjun Xu

DOI: https://doi.org/10.1364/ol.486066

2023-01-01

Abstract:Integrated optical systems based on lithium niobate on insulator (LNOI) have shown great potential in recent years. However, the LNOI platform is facing a shortage of active devices. Considering the significant progress made in rare-earth-doped LNOI lasers and amplifiers, the fabrication of on-chip ytterbium-doped LNOI waveguide amplifiers based on electron-beam lithography and inductively coupled plasma reactive ion etching was investigated. The signal amplification at lower pump power (<1 mW) was achieved by the fabricated waveguide amplifiers. A net internal gain of ∼18 dB/cm in the 1064 nm band was also achieved in the waveguide amplifiers under a pump power of 10 mW at 974 nm. This work proposes a new, to the best of our knowledge, active device for the LNOI integrated optical system. It may become an important basic component for lithium niobate thin-film integrated photonics in the future.