High-gain Erbium-doped Waveguide Amplifier on LNOI Platform

Minglu Cai,Junmin Xiang,Kan Wu,Jianping Chen

DOI: https://doi.org/10.1364/oecc.2021.t2e.2

2021-01-01

Abstract:We demonstrate an efficient erbium-doped waveguide amplifier based on lithium niobate thin film. With a 2.8 cm-long waveguide amplifier, optical signal at 1531.6 nm can achieve a maximum total gain of 24.8 dB.

What problem does this paper attempt to address?

Erbium-Doped Lithium Niobate Thin Film Waveguide Amplifier with 16 Db Internal Net Gain

Minglu Cai,Kan Wu,Junmin Xiang,Zeyu Xiao,Tieying Li,Chao Li,Jianping Chen

DOI: https://doi.org/10.1109/jstqe.2021.3137192

IF: 4.9

2021-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Erbium-doped lithium niobate on insulator (Er:LNOI) has attracted enormous interest as it provides gain and enables integrated amplifiers and lasers on the lithium niobate on insulator (LNOI) platform. We demonstrate a highly efficient waveguide amplifier on Er:LNOI. The 2.58-cm long amplifier can achieve 27.94 dB signal enhancement, 16.0 dB internal net gain (6.20 dB/cm), −8.84 dBm saturation power, 4.59 dB/mW power conversion efficiency, and 4.49 dB noise figure at 1531.6 nm. Besides, thorough investigation on the pumping wavelength, pumping scheme, output power and noise figure have been performed to provide a comprehensive understanding on this novel waveguide amplifier. This work will benefit the development of a powerful gain platform and can pave the way for a fully integrated photonic system on LNOI platform.
Erbium-Doped Lithium Niobate Waveguide Amplifier

Minglu Cai,Kan Wu,Di Zhu,Jiaxuan Long,Jianping Chen

DOI: https://doi.org/10.1109/CLEO/Europe-EQEC57999.2023.10232063

2023-01-01

Abstract:Lithium niobate on insulator (LNOI) has attracted great attention due to its outstanding material properties, such as strong electro-optic effect, large optical nonlinearity, lasing capability, etc. [1]. LNOI has proved to be a powerful platform for various photonic applications, and erbium-doped LNOI (Er: LNOI) with gain property has the potential to build a fully integrated photonic system with active components. Recently, many on-chip waveguide amplifiers and lasers based on Er: LNOI have been reported [2]. To our knowledge, benefiting from optimized waveguide structure, and pumping approaches, the 28.73 dB signal enhancement of the waveguide amplifier we have achieved is the highest one among all reported works on Er: LNOI. Moreover, we have demonstrated the signal amplification at the whole C band.
Integrated Erbium-Doped Waveguide Amplifier on Lithium Niobate on Insulator

Xiaotian Xue,Jing Qiu,Tingting Ding,Wenjun Ding,Jiayu Wang,Yongzhi Tang,Yuting Zhang,Hao Li,Shijie Liu,Yuanlin Zheng,Xianfeng Chen

DOI: https://doi.org/10.1364/ome.532439

2024-01-01

Optical Materials Express

Abstract:The erbium-doped lithium niobate on insulator (Er:LNOI) has garnered significant attention as it combines outstanding gain property with integration capabilities, making it a promising solution for active devices on the versatile LNOI platform. This also paves a way for the development of appealing erbium-doped waveguide amplifiers. Here, we demonstrate an efficient integrated Er:LNOI micro-waveguide amplifier directly compatible with the lens fiber. In a 5.6-cm-long Er:LNOI micro-waveguide, we demonstrate a maximum internal net gain of 18.8 dB for 1531-nm signal light with 1460-nm pumping. Moreover, the maximum output signal power surpasses 20 mW, thereby confirming the practicality of the Er:LNOI micro-waveguide amplifier. (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Erbium-doped Waveguide Amplifier on Lithium Niobate on Insulator with 27.94 Db Total Gain and 6.20 Db/cm Net Gain

Minglu Cai,Kan Wu,Junmin Xiang,Jianping Chen

DOI: https://doi.org/10.1364/oecc.2021.t5a.10

2021-01-01

Abstract:We demonstrate an erbium-doped waveguide amplifier on lithium niobate on insulator. The 2.58-cm long amplifier has 27.94 dB total gain (signal enhancement), 6.20 dB/cm net gain, and 3.48 dB noise figure at 1531.6 nm. © 2021 The Author(s)
Efficient erbium-doped thin-film lithium niobate waveguide amplifiers

Zhaoxi Chen,Qing Xu,Ke Zhang,Wing-Han Wong,De-Long Zhang,Edwin Yue-Bun Pun,Cheng Wang

DOI: https://doi.org/10.1364/OL.420250

2021-03-01

Abstract:Lithium niobate on insulator (LNOI) is an emerging photonic platform with great promise for use in future optical communications, nonlinear optics, and microwave photonics. An important integrated photonic building block, active waveguide amplifiers, however, are still missing in the LNOI platform. Here, we report an efficient and compact waveguide amplifier based on erbium-doped LNOI waveguides, achieved using a sequence of erbium-doped crystal growth, ion slicing, and lithography-based waveguide fabrication. Using a compact 5 mm long waveguide, we demonstrate an on-chip net gain of >5dB for 1530 nm signal light with a relatively low pump power of 21 mW at 980 nm. The efficient LNOI waveguide amplifiers could become an important fundamental element in future lithium niobate photonic integrated circuits.
Erbium-doped LNOI As a Gain Platform for Integrated Optics

Junmin Xiang,Minglu Cai,Tieying Li,Zeyu Xiao,Kan Wu,Jianping Chen

DOI: https://doi.org/10.1364/cleo_at.2021.jw1a.113

2021-01-01

Abstract:We demonstrate a gain platform based on erbium-doped lithium niobate thin film for integrated waveguide amplifier and laser. Luminescence properties of the film were characterized and gain properties of optical waveguide were calculated.
A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator

Congliao Yan,Shaoqian Wang,Sheng Zhao,Yulei Huang,Guoliang Deng,Sha Wang,Shouhuan Zhou

DOI: https://doi.org/10.1063/5.0137678

IF: 4

2023-03-22

Applied Physics Letters

Abstract:One hotspot of integrated optics is how to realize a highly integrated and high-gain on-chip amplification system in a thin film of lithium niobate on insulator (TFLNOI). Here, a low erbium-doped TFLNOI waveguide amplifier with shorter length is demonstrated using the photolithography-assisted oblique-reactive ion etching technique. A maximum net internal gain of 5.4 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1531.35 nm for a waveguide length of 1.5 mm and an erbium-doped concentration of 0.1 mol. %, indicating a gain per unit length of 36 dB cm −1 . This work paves the way for the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

physics, applied
On-chip erbium-doped lithium niobate waveguide amplifiers

Qiang Luo,Chen Yang,Zhenzhong Hao,Ru Zhang,Dahuai Zheng,Fang Bo,Yongfa Kong,Guoquan Zhang,Jingjun Xu

DOI: https://doi.org/10.3788/COL202119.060008

2021-03-30

Abstract:Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 dB/cm in communication band was achieved in the fabricated waveguide amplifiers under the pump of a 974-nm continuous laser. This work develops new active devices on LNOI and will promote the development of LNOI integrated photonics.

Optics,Applied Physics
Erbium-doped Lithium Niobate Waveguide Amplifier with Internal Net Gain Exceeding 20 Db

Minglu Cai,Tianyi Li,Xujia Zhang,Xianyi Cao,Long Wang,Yuanbin Liu,Jianping Chen,Kan Wu

DOI: https://doi.org/10.1364/cleo_si.2024.sw3o.3

2024-01-01

Abstract:The 10-cm long erbium-doped lithium niobate waveguide amplifier can achieve 52.2 dB signal enhancement with a 22.2 dB internal net gain at 1531 nm, which exceeds 20 dB at 45% wavelengths of the C-band.
On-chip Erbium-Doped Lithium Niobate Waveguide Amplifiers [Invited]

Qiang Luo,Chen Yang,Zhenzhong Hao,Ru Zhang,Dahuai Zheng,Fang Bo,Yongfa Kong,Guoquan Zhang,Jingjun Xu

DOI: https://doi.org/10.3788/col202119.060008

IF: 2.56

2021-01-01

Chinese Optics Letters

Abstract:Lithium niobate on insulator(LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication of on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ～30 d B/cm in the communication band was achieved in the fabricated waveguide amplifiers under the pump of a974 nm continuous laser. This work develops new active devices on LNOI and may promote the development of LNOI integrated photonics.
Highly efficient on-chip erbium-ytterbium co-doped lithium niobate waveguide amplifiers

Yuqi Zhang,Qiang Luo,Dahuai Zheng,Shuolin Wang,Shiguo Liu,Hongde Liu,Fang Bo,Yongfa Kong,Jingjun Xu

2023-06-12

Abstract:The ability to amplify optical signals is of paramount importance in photonic integrated circuits (PICs). Recently, lithium niobate on insulator (LNOI) has attracted increasing interests as an emerging PIC platform. However, the shortage of active devices on LNOI platform limits the development of optical amplification. Here, we firstly report an efficient waveguide amplifier based on erbium and ytterbium co-doped LNOI by using electron beam lithography and inductively coupled plasma reactive ion etching process. We have demonstrated that the net internal gain in the communication band is 15.70 dB/cm under the pumping of 974 nm continuous laser. Benefiting from the efficient pumping facilitated by energy transfer between ytterbium and erbium ions, signal amplification can be achieved at a low pump power of 0.1 mW. It is currently the most efficient waveguide amplifier under unidirectional pumping reported on the LNOI platform, with an internal conversion efficiency of 10%. This work proposes a new and efficient active device for LNOI integrated optical systems, which may become an important fundamental component of future lithium niobate photonic integration platforms.

Optics,Applied Physics
Erbium-doped Lithium Niobate on Insulator Waveguide Amplifier with Ultra-High Internal Net Gain of 38 Db

Yimeng Wang,Bo Wang,Bitao Shen,Sijie Yang,Ruixuan Chen,Haowen Shu,Xingjun Wang

DOI: https://doi.org/10.1364/cleo_at.2024.atu4m.3

2024-01-01

Abstract:We demonstrate an erbium-doped lithium niobate on insulator waveguide amplifier which achieved the highest internal net gain of 38 dB with a 9.16 cm waveguide at 1531.7 nm.
On-chip Integrated Waveguide Amplifiers on Erbium-doped Thin Film Lithium Niobate on Insulator

Junxia Zhou,Youting Liang,Zhaoxiang Liu,Wei Chu,Haisu Zhang,Difeng Yin,Zhiwei Fang,Rongbo Wu,Jianhao Zhang,Wei Chen,Zhe Wang,Yuan Zhou,Min Wang,Ya Cheng

DOI: https://doi.org/10.1002/lpor.202100030

2021-01-01

LASER & PHOTONICS REVIEWS

Abstract:On-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin-film lithium niobate on insulator (TFLNOI) is demonstrated using the photolithography-assisted chemomechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB cm(-1). This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.
On-chip Ytterbium-Doped Lithium Niobate Waveguide Amplifiers with High Net Internal Gain

Yuqi Zhang,Qiang Luo,Shuolin Wang,Dahuai Zheng,Shiguo Liu,Hongde Liu,Fang Bo,Yongfa Kong,Jingjun Xu

DOI: https://doi.org/10.1364/ol.486066

2023-01-01

Abstract:Integrated optical systems based on lithium niobate on insulator (LNOI) have shown great potential in recent years. However, the LNOI platform is facing a shortage of active devices. Considering the significant progress made in rare-earth-doped LNOI lasers and amplifiers, the fabrication of on-chip ytterbium-doped LNOI waveguide amplifiers based on electron-beam lithography and inductively coupled plasma reactive ion etching was investigated. The signal amplification at lower pump power (<1 mW) was achieved by the fabricated waveguide amplifiers. A net internal gain of ∼18 dB/cm in the 1064 nm band was also achieved in the waveguide amplifiers under a pump power of 10 mW at 974 nm. This work proposes a new, to the best of our knowledge, active device for the LNOI integrated optical system. It may become an important basic component for lithium niobate thin-film integrated photonics in the future.
Integrated spiral waveguide amplifiers on erbium-doped thin-film lithium niobate

Xiongshuo Yan,Yi'an Liu,Jiangwei Wu,Yuping Chen,Xianfeng Chen

DOI: https://doi.org/10.48550/arXiv.2105.00214

2021-05-01

Optics

Abstract:Integrated optical amplifiers and light sources are of great significance for photonic integrated circuits (PICs) and have attracted many research interests. Doping rare-earth ions in materials as a solution to realize efficient optical amplifiers and lasing has been investigated a lot. We investigate the erbium-doped lithium niobate on insulator (LNOI). Here, spiral waveguide amplifiers were fabricated on a 1-mol\% erbium-doped LNOI by CMOS-compatible technique. We demonstrated a maximum internal net gain of 8.3 dB at 1530 nm indicating a net gain per unit length of 15.6 dB/cm with a compact spiral waveguide of 5.3 mm length and $ \sim $0.06 mm$ ^{2} $ footprint. The erbium-doped integrated lithium niobate spiral waveguide amplifiers would pave the way in the PICs of the lithium niobate platform, especially in achieving efficient integration of active and passive devices on a lithium niobate thin film, which will make full use of its excellent physical properties such as remarkable photoacoustic, electro-optic, and piezoelectric characteristics.
A High-Gain Cladded Erbium-Doped LNOI Waveguide Amplifier Fabricated by PLACE

Youting Liang,Junxia Zhou,Zhaoxiang Liu,Haisu Zhang,Zhiwei Fang,Yuan Zhou,Difeng Yin,Jintian Lin,Jianping Yu,Rongbo Wu,Min Wang,Ya Cheng

DOI: https://doi.org/10.1109/cleo-pr62338.2022.10432272

2022-01-01

Abstract:Erbium doped integrated waveguide amplifier based on thin film lithium niobate on insulator (LNOI) is fabricated using photolithography assisted chemo-mechanical etching technique (PLACE). A thin cladding layer of tantalum pentoxide (Ta 2 O 5 ) is deposited on the fabricated LNOI waveguide which boosts the small-signal internal net gain exceeding 20 dB. Experimental characterizations reveal the advantage of Ta 2 O 5 cladding in higher optical gain compared with the amplifier without cladding. The demonstrated high-gain LNOI amplifier holds great promise in lightwave communication, optical sensing and metrology.
Modeling and Experimental Investigation of Erbium-Doped Lithium Niobate on Insulator Amplifiers

Xiang Junmin,Cai Minglu,Wu Kan,Zhang Guangjin,Chen Jianping

DOI: https://doi.org/10.3788/aos202242.1323002

2022-01-01

Acta Optica Sinica

Abstract:Erbium-doped lithium niobate on insulator (Er: LNOI) has attracted much attention because of its high gain. The Er: LNOI waveguide amplifier is modeled and the corresponding energy-level rate equation is established. The gain performance of Er:LNOI waveguide is simulated by using the model and compared with experiments. The internal net gains of the amplifier at the signal wavelength of 1531. 5 nm and 1550. 0 nm are studied at 980 nm and 1484 nm pump wavelengths. The waveguide gains with different signal powers and pump powers are compared by experiment and simulation. In addition, the effect of waveguide length on amplifier gain is also investigated.
On-chip erbium-doped lithium niobate microcavity laser and spiral waveguide amplifier

Xiongshuo Yan,Yi'an Liu,Jiangwei Wu,Xiangmin Liu,Yuping Chen,Xianfeng Chen

DOI: https://doi.org/10.1117/12.2600618

2021-01-01

Abstract:Integrated optical amplifiers and light sources are of great significance for photonic integrated circuits (PICs) and have attracted many research interests. Doping rare-earth ions in materials as a solution to realize efficient optical amplifiers and lasing has been investigated a lot. We investigated the erbium-doped lithium niobate on insulator (LNOI). Here, we fabricated a 1-mol% erbium-doped LNOI microdisk with a high-quality factor. C-band laser emission at ∼1530 and ∼1560 nm (linewidth 0.12 nm) from the high-Q erbium-doped LNOI microdisk was demonstrated with 974- and 1460-nm pumping. What’s more, spiral waveguide amplifiers were also fabricated by the CMOS-compatible technique. A maximum internal net gain of 8.3 dB at 1530 nm indicating a net gain per unit length of 15.6 dB/cm with a compact spiral waveguide of 5.3 mm length and ~0.06 mm2 footprint was demonstrated.
A high-gain cladded waveguide amplifier on erbium doped thin-film lithium niobate fabricated using photolithography assisted chemo-mechanical etching

Youting Liang,Junxia Zhou,Zhaoxiang Liu,Haisu Zhang,Zhiwei Fang,Yuan Zhou,Difeng Yin,Jintian Lin,Jianping Yu,Rongbo Wu,Min Wang,Ya Cheng

DOI: https://doi.org/10.48550/arXiv.2111.05571

2021-11-10

Optics

Abstract:Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode and moderate propagation loss, gain and power scaling in such integrated micro-to-nanoscale devices prove to be more challenging compared to their bulk counterparts. In this work, stimulated by the prevalent success of double-cladding optical fiber in high-gain/power operation, a Ta2O5 cladding is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemomechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ~980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW

Rui Bao,Zhiwei Fang,Jian Liu,Zhaoxiang Liu,Jinming Chen,Min Wang,Rongbo Wu,Haisu Zhang,Ya Cheng

2024-05-26

Abstract:We demonstrate high-power thin film lithium niobate (TFLN) erbium-doped waveguide amplifier (EDWA) with a maximum on-chip output power of 113 mW and a gain of 16 dB. The on-chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1x1 cm2. Particularly, we connect segmented LMA waveguides with waveguide tapers to achieve on-chip mode conversion which maintains single-mode propagation all over the EDWA even at the waveguide bends. The design leads to significant increase of the amplified signal power by orders of magnitude and will open an avenue for applications such as on-chip high-power lasers and amplifiers system.

Optics

High-gain Erbium-doped Waveguide Amplifier on LNOI Platform

Erbium-Doped Lithium Niobate Thin Film Waveguide Amplifier with 16 Db Internal Net Gain

Erbium-Doped Lithium Niobate Waveguide Amplifier

Integrated Erbium-Doped Waveguide Amplifier on Lithium Niobate on Insulator

Erbium-doped Waveguide Amplifier on Lithium Niobate on Insulator with 27.94 Db Total Gain and 6.20 Db/cm Net Gain

Efficient erbium-doped thin-film lithium niobate waveguide amplifiers

Erbium-doped LNOI As a Gain Platform for Integrated Optics

A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator

On-chip erbium-doped lithium niobate waveguide amplifiers

Erbium-doped Lithium Niobate Waveguide Amplifier with Internal Net Gain Exceeding 20 Db

On-chip Erbium-Doped Lithium Niobate Waveguide Amplifiers [Invited]

Highly efficient on-chip erbium-ytterbium co-doped lithium niobate waveguide amplifiers

Erbium-doped Lithium Niobate on Insulator Waveguide Amplifier with Ultra-High Internal Net Gain of 38 Db

On-chip Integrated Waveguide Amplifiers on Erbium-doped Thin Film Lithium Niobate on Insulator

On-chip Ytterbium-Doped Lithium Niobate Waveguide Amplifiers with High Net Internal Gain

Integrated spiral waveguide amplifiers on erbium-doped thin-film lithium niobate

A High-Gain Cladded Erbium-Doped LNOI Waveguide Amplifier Fabricated by PLACE

Modeling and Experimental Investigation of Erbium-Doped Lithium Niobate on Insulator Amplifiers

On-chip erbium-doped lithium niobate microcavity laser and spiral waveguide amplifier

A high-gain cladded waveguide amplifier on erbium doped thin-film lithium niobate fabricated using photolithography assisted chemo-mechanical etching

An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW