Abstract:The increasing prevalence of integrated on-chip optoelectronic devices has identified serious issues regarding inter-device transmission and coupling losses, highlighting an urgent need for on-chip waveguide amplifiers to compensate for these losses. Compared with other Er-based optical materials, erbium silicate is ideally suited to high-efficiency on-chip amplifiers and lasers because of its extremely high Er 3+ concentration (10 22 cm −3 ). Nevertheless, erbium silicate must be annealed above 1000°C to crystallize and activate the Er 3+ , which damages other on-chip optoelectronic components and is not conducive to device integration. Here, we report a low-fabrication-temperature, high-luminescence-efficiency gain material by adding Bi 2 O 3 to an erbium-ytterbium silicate mixed film. Our experiments demonstrate that the proposed film crystallizes at 600° C while the activation of Er 3+ is also achieved, which is the lowest activation temperature of on-chip waveguide amplifier to our knowledge. This material forms the basis for a new chip-scale waveguide amplifier design, with a theoretical multi-energy-level model of Bi-Er-Yb in the mixed thin films used to analyze its signal enhancement properties. We achieve a peak on-chip gain of 23 dB in a 3.3-mm-long waveguide under the pump and signal powers of 300 mW and 1 µW, respectively. These results highlight the potential of the proposed material for realizing on-chip amplifiers and lasers for large-scale nanophotonic integrated circuits.

On-chip Integrated Few-Mode Erbium–ytterbium Co-Doped Waveguide Amplifiers

Design Of An On-Chip Electrically Driven, Position-Adapted, Fully Integrated Erbium-Based Waveguide Amplifier For Silicon Photonics

Design of a Few-Mode Erbium-Ytterbium Co-Doped Polymer Optical Waveguide Amplifier With Low Differential Modal Gain

Highly efficient on-chip erbium-ytterbium co-doped lithium niobate waveguide amplifiers

High-order mode waveguide amplifier with high mode extinction ratio written in an Er3+-doped phosphate glass

A Low-Fabrication-Temperature Erbium-Based Waveguide Amplifier

On-chip Er-doped Ta2O5 waveguide amplifiers with a high internal net gain

An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW

High-gain Erbium Silicate Waveguide Amplifier and a Low-Threshold, High-Efficiency Laser.

Toward a10 dB net-gain waveguide amplifier in an Er3+-Yb3+ co-doped phosphate glass

A low-fabrication-temperature, high-gain chip-scale waveguide amplifier

High on-chip gain spiral Al2O3:Er3+ waveguide amplifiers

Toward a 10 Db Net-Gain Waveguide Amplifier in an Er3+-Yb3+ Co-Doped Phosphate Glass

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

All-optical Wavelength Conversion for Telecommunication Mode-Division Multiplexing Signals in Integrated Silicon Waveguides.

Design of Silicon Photonic Wavelength Conversion Chip for Mode-division Multiplexing Signals

On-chip erbium-doped lithium niobate waveguide amplifiers

Erbium-ytterbium co-doped aluminium oxide waveguide amplifiers fabricated by reactive co-sputtering and wet chemical etching

Ion-Exchanged Silica-On-Silicon Structured Channel Erbium-Doped Waveguide Amplifiers

Design of an on-chip wavelength conversion device assisted by an erbium-ytterbium co-doped waveguide amplifier

Efficient erbium-doped thin-film lithium niobate waveguide amplifiers