Near 100% external quantum efficiency 1550-nm broad spectrum photodetector

Yang Shen,Xingjun Xue,Andrew H Jones,Yiwei Peng,Junyi Gao,Ta Ching Tzu,Matt Konkol,Joe C Campbell
DOI: https://doi.org/10.1364/OE.447091
2022-01-17
Abstract:We report InGaAs/InP based p-i-n photodiodes with an external quantum efficiency (EQE) above 98% from 1510 nm to 1575 nm. For surface normal photodiodes with a diameter of 80 µm, the measured 3-dB bandwidth is 3 GHz. The saturation current is 30.5 mA, with an RF output power of 9.3 dBm at a bias of -17 V at 3 GHz.
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