High performance visible–near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors

Longfei Mi,Hui Wang,Yan Zhang,Xudong Yao,Yajing Chang,Guopeng Li,Guohua Li,Yang Jiang
DOI: https://doi.org/10.1088/1361-6528/28/5/055202
IF: 3.5
2016-12-23
Nanotechnology
Abstract:Here we fabricate self-powered photodetectors based on PbS-quantum-dots/indium Schottky barrier diodes successfully. These devices exhibit excellent repeatability and stability at a high frequency (up to1 MHz), and show a typical fast rise time/fall time of ∼0.8 μs/3.2 μs. They also show excellent rectification ratios up to 104 with bias from -0.5 V to +0.5 V in the dark and a pronounced photovoltaic performance under light illumination. Moreover, the devices demonstrate high sensitivity in weak light illumination detection (detectivity) approaching 1012 Jones and low noise currents <1 pAHz-1/2. These findings suggest great application potential of PbS-quantum-dots for advanced fast response, low noise current, high detectivity and high stability photodetectors.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
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