Hybrid perovskite exchange of PbS quantum dots for fast and high-detectivity visible–near-infrared photodetectors

Longfei Mi,Yajing Chang,Yan Zhang,Enze Xu,Yang Jiang

DOI: https://doi.org/10.1039/d0tc01373k

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:A hybrid perovskite decorated with PbS-QDs by using a ligand exchange process to fabricate high-performance photodetectors.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Efficient Visible–Near‐Infrared Hybrid Perovskite:PbS Quantum Dot Photodetectors Fabricated Using an Antisolvent Additive Solution Process

Dan Zhao,Jiang Huang,Ruiheng Qin,Genjie Yang,Junsheng Yu

DOI: https://doi.org/10.1002/adom.201800979

IF: 9

2018-01-01

Advanced Optical Materials

Abstract:Organometal lead‐halide perovskites demonstrate excellent photovoltaic performance in the visible (Vis) region. However, their lack of response in the near‐infrared (NIR) region limits their applications in broadband photodetectors. Herein, an efficient Vis–NIR perovskite photodetector (PePD) created by doping PbS quantum dots (QDs) in perovskite precursors via an antisolvent additive solution process is reported. By changing the volume of the antisolvent additive, perovskite hybrid films of MAPbI 3 :PbS QDs with good crystallinity and uniform grain size are created. The resultant Vis–NIR PePD exhibits a specific detectivity of 10 12 and 10 11 Jones in the visible and NIR regions, respectively. These results suggest that the antisolvent additive solution process can disperse PbS QDs between perovskite grain boundaries and control the perovskite crystallinity and morphology, providing a simple method to broaden the spectral response range of PePDs.
High performance visible–near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors

Longfei Mi,Hui Wang,Yan Zhang,Xudong Yao,Yajing Chang,Guopeng Li,Guohua Li,Yang Jiang

DOI: https://doi.org/10.1088/1361-6528/28/5/055202

IF: 3.5

2016-12-23

Nanotechnology

Abstract:Here we fabricate self-powered photodetectors based on PbS-quantum-dots/indium Schottky barrier diodes successfully. These devices exhibit excellent repeatability and stability at a high frequency (up to1 MHz), and show a typical fast rise time/fall time of ∼0.8 μs/3.2 μs. They also show excellent rectification ratios up to 104 with bias from -0.5 V to +0.5 V in the dark and a pronounced photovoltaic performance under light illumination. Moreover, the devices demonstrate high sensitivity in weak light illumination detection (detectivity) approaching 1012 Jones and low noise currents <1 pAHz-1/2. These findings suggest great application potential of PbS-quantum-dots for advanced fast response, low noise current, high detectivity and high stability photodetectors.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Self-powered Photodetectors Based on CsPbBr3 Quantum Dots/organic Semiconductors/sno2 Heterojunction for Weak Light Detection

Ben Yang,Pu Guo,Dandan Hao,Yan Wang,Li,Shilei Dai,Jia Huang

DOI: https://doi.org/10.1007/s40843-022-2155-0

2022-01-01

Science China Materials

Abstract:All-inorganic lead halide perovskite quantum dots (QDs) show great potential in the development of photodetectors (PDs) due to their excellent photoelectric properties. However, the photoresponse performance of the pure perovskite QDs-based PDs is usually limited by the poor charge transport efficiency of the perovskite QDs films. Here, high-performance self-powered PDs based on perovskite QDs and organic semiconductor PQT-12 (poly(3,3‴-didodecyl quarterthiophene)) are reported. Even in a self-powered mode, the devices can still show stable photoresponse to light signals and achieve excellent photodetection performance, including a detectivity up to 5.8 × 1012 Jones, and Ilight/Idark ratio up to 105. More importantly, the devices exhibit obvious photoresponse to weak light with intensity as low as 3 nW cm−2. To the best of our knowledge, the weak light detection ability of the device is better than most reported PDs based on perovskite QDs. In addition, the devices can be fabricated into flexible PDs with almost unchanged photocurrent under different bending angles. The overall performances of our devices are excellent among the reported self-powered PDs. This method utilized here provides new guides for developing high-performance self-powered PDs based on perovskite QDs for weak light detection.
Bilayer PbS Quantum Dots for High-Performance Photodetectors.

Zhenwei Ren,Jiankun Sun,Hui Li,Peng Mao,Yuanzhi Wei,Xinhua Zhong,Jinsong Hu,Shiyong Yang,Jizheng Wang

DOI: https://doi.org/10.1002/adma.201702055

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Due to their wide tunable bandgaps, high absorption coefficients, easy solution processabilities, and high stabilities in air, lead sulfide (PbS) quantum dots (QDs) are increasingly regarded as promising material candidates for next-generation light, low-cost, and flexible photodetectors. Current single-layer PbS-QD photodetectors suffer from shortcomings of large dark currents, low on-off ratios, and slow light responses. Integration with metal nanoparticles, organics, and high-conducting graphene/nanotube to form hybrid PbS-QD devices are proved capable of enhancing photoresponsivity; but these approaches always bring in other problems that can severely hamper the improvement of the overall device performance. To overcome the hurdles current single-layer and hybrid PbS-QD photodetectors face, here a bilayer QD-only device is designed, which can be integrated on flexible polyimide substrate and significantly outperforms the conventional single-layer devices in response speed, detectivity, linear dynamic range, and signal-to-noise ratio, along with comparable responsivity. The results which are obtained here should be of great values in studying and designing advanced QD-based photodetectors for applications in future flexible optoelectronics.
Organic-inorganic Hybrid Sn-based Perovskite Photodetectors with High External Quantum Efficiencies and Wide Spectral Responses from 300 to 1000 Nm

Yukun Wang,Dezhi Yang,Dongge Ma,Dong Ha Kim,Tansir Ahamad,Saad M. Alshehri,Agafonv Vadim

DOI: https://doi.org/10.1007/s40843-018-9377-3

2018-01-01

Science China Materials

Abstract:Organic-inorganic hybrid perovskites are ideal materials for photodetection owing to their high charge carrier mobility, long charge carrier diffusion length, low dark current density and sharp absorption edge. However, a relatively small band gap (1.6 eV) limits their photon-harvesting efficiency in the near-infrared region. In the present work, we demonstrate a hybrid methylamine iodide and Pb-Sn binary perovskite as the light absorption layer in photodetectors. Experimentally, the wavelength of photoresponse onset for the photodetectors can be extended to as great as 1,000 nm when the Sn content of the hybrid perovskite is increased to 30 mol%. In addition, the photodetectors exhibit a photoresponsivity of 0.39 A W −1 , a specific detectivity of 7×10 12 Jones, a fast photoresponse with rise and decay time constants and an external quantum efficiency greater than 50% in the wavelength range of 350–900 nm, with a maximum value of about 80% at 550 nm.
CsPbBr3 Perovskite Quantum Dots/p-Gan Heterojunction for Ultraviolet-Visible Spectrum Photodetectors

Yushen Liu,Bingjie Ye,Yang Gao,Xifeng Yang,Mingfa Peng,Guofeng Yang

DOI: https://doi.org/10.1063/5.0238223

IF: 4

2024-01-01

Applied Physics Letters

Abstract:All-inorganic perovskites have attracted increasing attention because of their strong environmental stability and excellent photoelectric properties. However, the limited spectral response range of perovskite photodetectors restricts them in practical applications. In this work, an ultraviolet–visible photodetector with a wide spectral response and a high responsivity was prepared by constructing a CsPbBr3 quantum dots (QDs)/p-GaN heterojunction. The type-II energy band alignment formed by the heterojunction is conducive to the transport of photogenerated carriers, resulting in a high responsivity. Under certain conditions, the device can obtain responsivity values of 5 A/W and 850 mA/W under 350 and 725 nm illumination, respectively, which are comparable to those of other perovskite-based photodetectors. In addition, the photoresponse mechanism of the device is revealed through first-principles calculations of the heterojunction and the device. The enhanced light absorption of the heterojunction and the special band bending under different bias voltages improve the photoelectric performance of the device. This work can provide valuable insights into high-performance photodetectors based on all-inorganic perovskite QDs heterojunctions in terms of band regulation and device performance improvement.
SnS Quantum Dots Enhancing Carbon-Based Hole Transport Layer-Free Visible Photodetectors

Rui Zhang,Jing Li,Sainan Liao,Shuxin Huang,Chenguang Shen,Mengwei Chen,Yingping Yang

DOI: https://doi.org/10.3390/nano14110956

2024-05-29

Abstract:The recombination of charges and thermal excitation of carriers at the interface between methylammonium lead iodide perovskite (PVK) and the carbon electrode are crucial factors that affect the optoelectronic performance of carbon-based hole transport layer (HTL)-free perovskite photodetectors. In this work, a method was employed to introduce SnS quantum dots (QDs) on the back surface of perovskite, which passivated the defect states on the back surface of perovskite and addressed the energy-level mismatch issue between perovskite and carbon electrode. Performance testing of the QDs and the photodetector revealed that SnS QDs possess energy-level structures that are well matched with perovskite and have high absorption coefficients. The incorporation of these QDs into the interface layer effectively suppresses the dark current of the photodetector and greatly enhances the utilization of incident light. The experimental results demonstrate that the introduction of SnS QDs reduces the dark current by an order of magnitude compared to the pristine device at 0 V bias and increases the responsivity by 10%. The optimized photodetector exhibits a wide spectral response range (350 nm to 750 nm), high responsivity (0.32 A/W at 500 nm), and high specific detectivity (>1 × 1012 Jones).
Ambient-Stable and High On/Off Ratio Near-Infrared Photodetector Based on Perovskite-Treated PbS Colloidal Quantum Dots

Qingqing Wu,Yajie Yan,Ziqi Liang,Shaojian Hu,Jianjun Zhu,Shoumian Chen

DOI: https://doi.org/10.1109/cstic49141.2020.9282505

2020-01-01

Abstract:Due to their low-cost in manufacturing, size-tunable spectral sensitivity, and flexible substrate compatibility, lead sulphide colloidal quantum dots (PbS CQDs) are increasingly regarded as promising active material candidates for next-generation NIR photodetectors. In this study, the effective passivation on the surface of PbS CQDs with perovskites is demonstrated, and the perovskite-treated PbS CQDs show improved ambient stability and reduced agglomeration. The PbS CQDs photodiode detectors are self-powered and exhibit a high on/off ratio up to 3×10 4 along with a large photocurrent density of 2 mA cm -2 . Meanwhile, the photoconductor structured photodetectors based on the same materials, displays a responsivity of 0.48 A W -1 and excellent long-term stability in ambient atmosphere.
On the mechanism to suppress dark current via blending all-inorganic pervoskite precursor for colloidal quantum dots photodetectors

Ying Wu,Shengyi Yang,Feiyang Sun,Xiaoxuan Liu,Zhenheng Zhang,Yi Tang,Yurong Jiang,Bingsuo Zou

DOI: https://doi.org/10.1039/d3tc02894a

IF: 6.4

2023-10-24

Journal of Materials Chemistry C

Abstract:PbS colloidal quantum dots (CQDs) are commonly used for infrared photodetectors due to its broad absorption range into infrared region, size-dependent behavior, facile solution-synthesis processing and excellent optoelectronic properties. However, the conventional hot-injection method used to synthesize PbS CQDs is still complicated, and the device performance of pure PbS CQDs photodetectors is not always very high due to the large density of surface states and the low mobility of the PbS CQDs layer. In this paper, a 'one-step' method was firstly used to synthesize PbS CQDs capped with short chain ligand I (i.e. PbS-I), and then it was blended with all-inorganic perovskite CsPbBr3 precursor as the active layer via a facile solution processing, thus high-performance photodetectors Si/PbS:CsPbBr3/Ag on silicon wafer substrate were obtained after optimizing the volume ratio of PbS to CsPbBr3 precursor, and the underlain physical mechanism is believed to be the surface passivation and the heightened carriers' injection barrier raised by blending CsPbBr3, as a result, a maximum responsivity of 12.97 A/W with a specific detectivity of 6.89×1012 Jones under 4.8 μW/cm2 980 nm illumination at -1 V was obtained, as well as a responsivity of 4.38 A/W with a specific detectivity of 1.44×1013 Jones in self-driven mode.

materials science, multidisciplinary,physics, applied
High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

Hefu Zhong,Libin Tang,Pin Tian,Lijing Yu,Wenbin Zuo,Kar Seng Teng

DOI: https://doi.org/10.3390/s23042254

IF: 3.9

2023-02-18

Sensors

Abstract:Quantum dots have found significant applications in photoelectric detectors due to their unique electronic and optical properties, such as tunable bandgap. Recently, colloidal quantum dots (CQDs) have attracted much interest because of the ease of controlling the dot size and low production cost. In this paper, a high-performance ZnO/PbS heterojunction photodetector was fabricated by spin-coating PbS CQDs onto the surface of a hydrothermally grown vertical array of ZnO nanowires (NWs) on an indium tin oxide (ITO) substrate. Under 940 nm near-infrared light illumination, the device demonstrated a responsivity and detectivity of ~3.9 × 104 A/W and ~9.4 × 1013 Jones, respectively. The excellent performances and low cost of this nanocomposite-based photodetector show that it has the potential for widespread applications ranging from medical diagnosis to environmental monitoring.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Enhanced Surface Passivation of Lead Sulfide Quantum Dots for Short-Wavelength Photodetectors

Shichen Yin,Carr Hoi Yi Ho,Shuo Ding,Xiangyu Fu,Liping Zhu,Julian Gullett,Chen Dong,Franky So

DOI: https://doi.org/10.1021/acs.chemmater.2c00293

IF: 10.508

2022-01-01

Chemistry of Materials

Abstract:Lead sulfide (PbS) quantum dots are promising solution-processed materials for short-wave infrared (SWIR) photodetectors due to their tunable band gap and solution processability. Phase-transfer ligand exchange is a common method to prepare quantum dot (QD) inks used in device fabrication. For large-sized PbS QDs used for SWIR detection, the conventional phase-transfer ligand exchange has been problematic due to the densely packed organic ligands and charge-neutral (100) facets. Here, we report a new strategy to carry out the efficient phase-transfer ligand exchange in large-sized QDs. Specifically, using lead acetate trihydrate (PbAc2 center dot 3H(2)O) as a precursor and methylammonium acetate (MAAc) as an additive in the ligand solution, we can facilitate the efficient phase-transfer ligand exchange and epitaxial growth of perovskite intermediate (MAPbI(3-x)Ac(x)) on the (100) facets, resulting in a significant improvement in film quality suitable for device fabrication. The resulting photodiodes show a 2.5X enhancement in external quantum efficiency (EQE) compared to devices using QD inks obtained using the conventional method. Considering the low transmittance of the ITO electrode in the SWIR regime, our devices exhibit an internal quantum efficiency of over 90%.
Perovskite/Polymer Hybrid Thin Films for High External Quantum Efficiency Photodetectors with Wide Spectral Response from Visible to Near‐Infrared Wavelengths

Yukun Wang,Dezhi Yang,Xiaokang Zhou,Dongge Ma,Agafonov Vadim,Tansir Ahamad,Saad M. Alshehri

DOI: https://doi.org/10.1002/adom.201700213

IF: 9

2017-01-01

Advanced Optical Materials

Abstract:The characteristics such as high charge carrier mobility, long diffusion length, low dark current, and sharp absorption edge of perovskites make the material ideal for realizing photodetection, that is, simultaneously fast and sensitive. However, narrow spectral (850 nm) response limits their application. Here, this study successfully demonstrates an integrated perovskite/polymer device structure based on perovskite/hybrid thin films for efficient light harvesting. The expansion of the photoresponse spectrum is achieved by selecting an appropriate low band gap polymer (poly(diketopyrrolopyrrole-terthiophene)), which has a wider response (950 nm). It can be seen that the resulting photodetectors (PDs) yield an external quantum efficiency of approximate to 70% over a 500-700 nm range, and the photoresponse extends to 950 nm, which is obviously wider than the photoresponse of perovskite-based PDs. Moreover, the dark current density of the hybrid PDs is more efficiently suppressed compared with polymer-based PDs. The reduced dark current enhances the detectivity and linear dynamic range of the fabricated hybrid PDs, which achieve values of 1013 Jones and 110 dB, respectively.
Achieving High Responsivity and Detectivity in a Quantum-Dot-in-Perovskite Photodetector

Zhirong Liu,Zhiguo Zhang,Xuning Zhang,Xiongjie Li,Zhiyong Liu,Guanglan Liao,Yan Shen,Mingkui Wang

DOI: https://doi.org/10.1021/acs.nanolett.2c04144

IF: 10.8

2023-02-09

Nano Letters

Abstract:This work reports on quantum dots (QDs) in perovskite photodetectors showing high optoelectronic performance via quantum-dot-assisted charge transmission. The self-powered broad-band photodetector constructed with SnS QDs in FAPb(0.5)Sn(0.5)I(3) perovskite can capture incoming optical signals directly at zero bias. The QDs-in-perovskite photodetector exhibits a high sensitivity in the wavelength range from 300 to 1000 nm. Its responsivity at 850 nm reaches 521.7 mA W^(-1), and a high specific...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Converting Perovskite Nanocrystals to PbS Quantum Dots Toward Short‐Wave Infrared Photodetectors

Wenjie Zhang,Fan Fang,Huaying Zhong,Lili Huang,Haodong Tang,Xi Chen,Junjie Hao,Lei Zhang,Leifeng Cao,Jun Tang,Keyu Zheng,Peter Müller‐Buschbaum,Wei Chen

DOI: https://doi.org/10.1002/adom.202402740

IF: 9

2024-12-01

Advanced Optical Materials

Abstract:PbS quantum dots (QDs) fabricated via the perovskite nanocrystals conversion method (PCM) show reduced trap densities and enhanced charge transport, outperforming conventional hot injection method QDs in SWIR photodetectors. PCM‐QD devices exhibit higher responsivity, detectivity, and faster response, offering promise for advanced optoelectronic applications. PbS quantum dots (QDs) are particularly promising in low‐cost short‐wave infrared (SWIR) photodetection and imaging applications. Herein, a novel method is introduced defined as the perovskite conversion method (PCM) fabricating PbS QDs by using perovskite nanocrystals (PeNCs) as the lead precursor. The elemental substitution mechanism for PbS QDs from PeNCs is proposed, and it is confirmed that PCM‐QDs are exhibiting a smaller trap density due to a natural perovskite passivated surface condition compared to QDs prepared via conventional hot injection method (HIM). Grazing‐incidence small‐angle X‐ray scattering (GISAXS) results indicate that a short‐range disorder of the QDs can lead to a long‐range disorder configuration in the inner structure of PCM‐QD superlattice, which leads to a compact configuration in the QD solid film facilitating charge carrier transport in devices. In a photoconductor‐typed SWIR photodetector (PD) comparison, PCM‐QD PDs exhibit a high responsivity of 468 A W−1 and detectivities of 2.1 × 1012 Jones, which are almost three times higher than the values in HIM‐QDs PDs. Moreover, PCM‐QD PDs further show a higher response speed and one magnitude order higher loss frequency than PCM‐QD PDs. PCM is promising in the fabrication of high‐quality QDs for advanced optoelectronic applications.

materials science, multidisciplinary,optics
High-performance flexible and broadband photodetectors based on PbS quantum dots/ZnO nanoparticles heterostructure

Mingfa Peng,Yongjie Wang,Qingqing Shen,Xinkai Xie,Hechuang Zheng,Wanli Ma,Zhen Wen,Xuhui Sun

DOI: https://doi.org/10.1007/s40843-018-9311-9

2018-06-28

Science China Materials

Abstract:Flexible and broadband photodetectors have drawn extensive attention due to their potential application in foldable displays, optical communications, environmental monitoring, etc. In this work, a flexible photodetector based on the crystalline PbS quantum dots (QDs)/ZnO nanoparticles (NPs) heterostructure was proposed. The photodetector exhibits a broadband response from ultraviolet-visible (UV-Vis) to near infrared detector (NIR) range with a remarkable current on/off ratio of 7.08×103 under 375 nm light illumination. Compared with pure ZnO NPs, the heterostructure photodetector shows the three orders of magnitude higher responsivity in Vis and NIR range, and maintains its performance in the UV range simultaneously. The photodetector demonstrates a high responsivity and detectivity of 4.54 A W−1 and 3.98×1012 Jones. In addition, the flexible photodetectors exhibit excellent durability and stability even after hundreds of times bending. This work paves a promising way for constructing next-generation high-performance flexible and broadband optoelectronic devices.

materials science, multidisciplinary
Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

Yuanlin Shi,Zhiming Wu,Zihao Xiang,Pengyu Chen,Chunyu Li,Hongxi Zhou,Xiang Dong,Jun Gou,Jun Wang,Yadong Jiang

DOI: https://doi.org/10.1088/1361-6528/abb105

IF: 3.5

2020-09-15

Nanotechnology

Abstract:Silicon-based photodetectors as the main force in visible and near-infrared detection devices have been deeply embedded in modern technology and human society, but due to the characteristics of silicon itself, its response wavelength is generally less than 1100 nm. It is an interesting study to combine the state-of-art silicon processing with emerging infrared-sensitive Lead sulfide colloidal quantum dots (PbS-CQDs) to produce a photodetector that can detect infrared light. Here, we demonstrated a silicon-compatible photodetector that could be integrated on-chip, and also sensitive to infrared light which is owing to a PbS-CQDs absorption layer with tunable bandgap. The device exhibit extremely high gain which reaches maximum detectivity , fast response 211/558 <i>μ</i>s, and extremely high external quantum efficiency , which is owing to new architecture and reasonable ligand exchange options. The performance of the device originates from the new architecture, that is, using the photovoltaic voltage generated by the surface of PbS-CQDs to change the width of the depletion layer to achieve detection. Besides, the performance improvement of devices comes from the addition of PbS-CQDs (Ethanedithiol treated) layer, which effectively reduces the fall time and makes the device expected to work at higher frequencies. Our work paves the way for the realization of cost-efficient high-performance silicon compatible infrared optoelectronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Two-Step Ligand-Exchange-Assisted Charge Transfer in Graphene/PbS Quantum Dots Hybrid Near-Infrared Photodetector

Tian Jia,Yuanze Hong,Zhipeng Wei,Baoxia Mu,Xuechao Yu

DOI: https://doi.org/10.1021/acsaelm.4c00164

IF: 4.494

2024-01-01

ACS Applied Electronic Materials

Abstract:Near-infrared photoelectric detectors are widely used in the military and national economy, such as aerospace, optical communication, and near-infrared imaging. Graphene/quantum dots (QDs) hybrid photodetectors possessing high responsivity and broadband spectral range have been prodigiously studied due to the combination of high mobility of graphene, broad spectral response, and high light absorption of QDs. However, the long-chain ligands that modify the outer surface of the QDs stem the transfer of charge carriers, thus hindering the performance of the hybrid photodetectors. Here, we demonstrate colossal response in Graphene/QDs detectors via a two-step ligand exchange method to exchange the inceptive long chains with specifically selected molecules. Prior to the solid-state ligand exchange, QDs were pretreated with methylammonium iodide (MAI) in solution as the first ligand exchange and 1,2-ethanedithiol (EDT) was redeposited after the tetrabutylammonium iodide (TBAI) ligand exchange in the second step to ensure complete passivation of surface defects. After the two-step ligand exchange process, the device performances have been significantly improved. The responsivity and detectivity of the device are 6.7 x 10(3) A center dot W(-1)and 1.86 x 10(9) Jones, respectively, which are increased by 2 orders of magnitude, heralding the development of high-performance near-infrared photodetection and imaging systems in integrated photonics applications.
Solution-processed, flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot heterostructures

Jinming Hu,Shengyi Yang,Zhenheng Zhang,Hailong Li,Chandrasekar Perumal Veeramalai,Muhammad Sulaman,Muhammad Imran Saleem,Yi Tang,Yurong Jiang,Libin Tang,Bingsuo Zou

DOI: https://doi.org/10.1016/j.jmst.2020.06.047

IF: 10.319

2021-03-01

Journal of Materials Science and Technology

Abstract:A facile heterostructure arrays construction strategy is presented.Photodetectors based on CsPbBr3/PbSe quantum dot heterostructure arrays exhibit high performance from UV to LW-IR regions, excellent flexibility and stability.The response time of the device is shorten more than three orders of magnitude as that of pristine PbSe.Improved exciton dissociation and carrier transfer enhance the device performance.Due to their promising applications in foldable displays, optical communication equipment and environmental monitoring systems, flexible and broadband optoelectronic devices have gained extensive attention in recent years. Here, a flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot (QD) heterostructures is firstly presented. The integrated QD heterostructures possess consecutive detection range from ultraviolet (UV) to long-wavelength infrared (LW-IR) regions with efficient light absorption and chemical stability, in comparison with the pristine PbSe QDs. Systematic material characterizations reveal the improved exciton dissociation, carrier transport and carrier lifetime of the QD heterostructures. Flexible photodetector Ag/CsPbBr3/PbSe/Ag demonstrate a high responsivity of 7.17 A/W with a specific detectivity of 8.97 × 1012 Jones under 25 μW/cm2 365 nm illumination at 5 V. Furthermore, it could maintain 91.2% (or 94.9%) of its initial performance even after bending for thousands of times (or exposing in ambient air for 4 weeks). More importantly, its response time is shortened more than three orders of magnitude as that of pristine PbSe QDs-based photodetectors. Therefore, it provides a feasible and promising method for the next-generation high-performance broadband photodetectors via constructing heterostructures of various QDs.Download : Download high-res image (138KB)Download : Download full-size image

materials science, multidisciplinary,metallurgy & metallurgical engineering
Enhancing Hybrid Perovskite Detectability in the Deep Ultraviolet Region with Down-Conversion Dual-Phase (Cspbbr3-Cs4pbbr6) Films.

Guoqing Tong,Huan Li,Zhifeng Zhu,Yan Zhang,Linwei Yu,Jun Xu,Yang Jiang

DOI: https://doi.org/10.1021/acs.jpclett.8b00429

IF: 6.888

2018-01-01

The Journal of Physical Chemistry Letters

Abstract:Hybrid perovskite photodetectors (PDs) exhibit outstanding performance in the ultraviolet-visible (UV-vis) spectrum but have poor detectability in the deep ultraviolet (DUV) region (200-350 nm). In this work, a novel inorganic-hybrid architecture that incorporates a dual-phase (CsPbBr3-Cs4PbBr6) inorganic perovskite material as a down-conversion window layer and a hybrid perovskite as a light capture layer was prepared to achieve faster, highly sensitive photodetection in the DUV spectrum. A dual-phase inorganic perovskite film coated on the back surface of the photodetector enables strong light absorption and tunes the incident energy into emission bands that are optimized for the perovskite photodetector. The presence of Cs4PbBr6 enhances the capture and down-conversion of the incident DUV light. Due to the down-conversion and transport of the DUV photons, a self-driven perovskite photodetector with this composite structure exhibits a fast response time of 7.8/33.6 μs and a high responsivity of 49.4 mA W-1 at 254 nm without extra power supply.
Organic Amine-Bridged Quasi-2D Perovskite/PbS Colloidal Quantum Dots Composites for High-Gain Near-Infrared Photodetectors

Wanting Pan,Mingrui Tan,Yuhong He,Haotong Wei,Bai Yang

DOI: https://doi.org/10.1021/acs.nanolett.1c04569

IF: 10.8

2022-03-08

Nano Letters

Abstract:Near-infrared (NIR) II detection at weak flux intensity is required in medical imaging and is especially urgent in light of the low quantum efficiency of NIR-II dyes. The low responsivity of traditional photodetectors in this region limits image quality. Here, we report a NIR-II photodetector with high gain based on perovskite coupled PbS colloidal quantum dots (CQDs). Tailoring the trap density of CQDs by designing surface ligands with dual functionality contributed to control over trap-induced charge-injection upon light illumination. As a result, a detector with high gain is realized, showing external quantum efficiency of 1260% at 1200 nm and achieving the lowest detectable light intensity, that is, as low as 0.67 pW cm–2 with a linear dynamic range of 200 dB. Devices maintain over 90% of responsivity after 150 days of storage. We acquired images of a butterfly wing, showing the skeleton texture with a maximum spatial resolution of 3.9 lp/mm.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.1c04569.Detailed experimental procedure and Figures S1–S13. Synthesis, size characterization, and UPS spectra of PbS CQDs, the optical field simulation of pure perovskite film, and UV-NIR absorbance spectra, PL lifetime, hall measurements, DFT simulation, SCLC measurement, J–V curves, On–Off transient measurement, EQE plots, MTF calculation, operational stability, and ion migration characterization (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Hybrid perovskite exchange of PbS quantum dots for fast and high-detectivity visible–near-infrared photodetectors

Efficient Visible–Near‐Infrared Hybrid Perovskite:PbS Quantum Dot Photodetectors Fabricated Using an Antisolvent Additive Solution Process

High performance visible–near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors

Self-powered Photodetectors Based on CsPbBr3 Quantum Dots/organic Semiconductors/sno2 Heterojunction for Weak Light Detection

Bilayer PbS Quantum Dots for High-Performance Photodetectors.

Organic-inorganic Hybrid Sn-based Perovskite Photodetectors with High External Quantum Efficiencies and Wide Spectral Responses from 300 to 1000 Nm

CsPbBr3 Perovskite Quantum Dots/p-Gan Heterojunction for Ultraviolet-Visible Spectrum Photodetectors

SnS Quantum Dots Enhancing Carbon-Based Hole Transport Layer-Free Visible Photodetectors

Ambient-Stable and High On/Off Ratio Near-Infrared Photodetector Based on Perovskite-Treated PbS Colloidal Quantum Dots

On the mechanism to suppress dark current via blending all-inorganic pervoskite precursor for colloidal quantum dots photodetectors

High-Performance Near-Infrared Photodetector Based on PbS Colloidal Quantum Dots/ZnO-Nanowires Hybrid Nanostructures

Enhanced Surface Passivation of Lead Sulfide Quantum Dots for Short-Wavelength Photodetectors

Perovskite/Polymer Hybrid Thin Films for High External Quantum Efficiency Photodetectors with Wide Spectral Response from Visible to Near‐Infrared Wavelengths

Achieving High Responsivity and Detectivity in a Quantum-Dot-in-Perovskite Photodetector

Converting Perovskite Nanocrystals to PbS Quantum Dots Toward Short‐Wave Infrared Photodetectors

High-performance flexible and broadband photodetectors based on PbS quantum dots/ZnO nanoparticles heterostructure

Silicon-based PbS-CQDs infrared photodetector with high sensitivity and fast response

Two-Step Ligand-Exchange-Assisted Charge Transfer in Graphene/PbS Quantum Dots Hybrid Near-Infrared Photodetector

Solution-processed, flexible and broadband photodetector based on CsPbBr3/PbSe quantum dot heterostructures

Enhancing Hybrid Perovskite Detectability in the Deep Ultraviolet Region with Down-Conversion Dual-Phase (Cspbbr3-Cs4pbbr6) Films.

Organic Amine-Bridged Quasi-2D Perovskite/PbS Colloidal Quantum Dots Composites for High-Gain Near-Infrared Photodetectors