Abstract:Identifying the point defects in 2D materials is important for many applications. Recent studies have proposed that W vacancies are the predominant point defect in 2D WSe2, in contrast to theoretical studies, which predict that chalcogen vacancies are the most likely intrinsic point defects in transition metal dichalcogenide semiconductors. We show using first principles calculations, scanning tunneling microscopy (STM) and scanning transmission electron microscopy experiments, that W vacancies are not present in our CVD-grown 2D WSe2. We predict that O-passivated Se vacancies (O_Se) and O interstitials (Oins) are present in 2D WSe2, because of facile O2 dissociation at Se vacancies, or due to the presence of WO3 precursors in CVD growth. These defects give STM images in good agreement with experiment. The optical properties of point defects in 2D WSe2 are important because single photon emission (SPE) from 2D WSe2 has been observed experimentally. While strain gradients funnel the exciton in real space, point defects are necessary for the localization of the exciton at length scales that enable photons to be emitted one at a time. Using state-of-the-art GW-Bethe-Salpeter-equation calculations, we predict that only Oins defects give localized excitons within the energy range of SPE in previous experiments, making them a likely source of previously observed SPE. No other point defects (O_Se, Se vacancies, W vacancies and Se_W antisites) give localized excitons in the same energy range. Our predictions suggest ways to realize SPE in related 2D materials and point experimentalists toward other energy ranges for SPE in 2D WSe2.

Defect creation in WSe2 with a microsecond photoluminescence lifetime by focused ion beam irradiation

Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe$_2$

Wide-Field Spectral Super-Resolution Mapping of Optically Active Defects in Hexagonal Boron Nitride.

Defect Activated Photoluminescence in WSe2 Monolayer

Electrically pumped single-defect light emitters in WSe$_2$

Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation

Defects As a Factor Limiting Carrier Mobility in WSe 2 : A Spectroscopic Investigation

Strong Room-Temperature Emission from Defect States in CVD-grown WSe 2 Nanosheets

Point Defects and Localized Excitons in 2D WSe2

Identifying Defect-Related Quantum Emitters in Monolayer WSe2

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

Origin of selective enhancement of sharp defect emission lines in monolayer WSe$_2$ on rough metal substrate

Giant Enhancement of Photoluminescence Emission in Monolayer WS2 by Femtosecond Laser Irradiation

Revealing the Optical Transition Properties of Interlayer Excitons in Defective WS2/WSe2 Heterobilayers

Defect Structure of Localized Excitons in A Wse2 Monolayer

Defect-Engineering-Enhanced Electrical Manipulation of Anisotropic Excitons in Two-Dimensional ReS2

Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering

Ultrafast atomic-scale scanning tunnelling spectroscopy of a single vacancy in a monolayer crystal

Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe$_2$

Robust and High Photoluminescence in WS 2 Monolayer through In Situ Defect Engineering