Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Photoluminescence Enhancement in WS 2 Nanosheets Passivated with Oxygen Ions: Implications for Selective Area Doping

Defect Activated Photoluminescence in WSe2 Monolayer

Robust and High Photoluminescence in WS 2 Monolayer through In Situ Defect Engineering

Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering

Photoluminescence Inhomogeneity and Excitons in CVD-grown Monolayer WS2

Low Temperature Single Carbon Nanotube Spectroscopy of sp3 Quantum Defects.

Photoluminescence Intensity Fluctuations and Temperature-Dependent Decay Dynamics of Individual Carbon Nanotube Sp3 Defects

(Invited) Functionalization and Environmental Dependent Emission Properties of Photoluminescent Defect States in Carbon Nanotubes

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

Dynamics of bound exciton complexes in CdS nanobelts.

Exciton Aggregation Induced Photoluminescence Enhancement of Monolayer WS2

Revealing the Competition between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS 2

Tunable Photoluminescence in WS2/WO3 Monolayer/Nanoparticles Hybrid Structure

Defect‐Mediated Efficient and Tunable Emission in van der Waals Integrated Light Sources at Room Temperature

Defect creation in WSe2 with a microsecond photoluminescence lifetime by focused ion beam irradiation

Giant Enhancement of Photoluminescence Emission in Monolayer WS2 by Femtosecond Laser Irradiation

Preparation and Photoluminescence of Tungsten Disulfide Monolayer

Ultrasmall and Monolayered Tungsten Dichalcogenide Quantum Dots with Giant Spin–Valley Coupling and Purple Luminescence