Abstract:The exciton–exciton annihilation (EEA) process easily occurs in monolayer transition metal dichalcogenides (TMDs) because of the strong Coulomb interaction and quantum confinement effect, which enhance the many-body interaction of excitons. This process can affect the performance of the optoelectronic devices. It is crucial to examine the effect of defect states on the EEA process and determine whether it is comparable to that at the low excitation intensities, particularly when applied to laser devices at a high exciton density. In this study, femtosecond transient absorption spectroscopy was used to explore the EEA process of four types of CVD-grown monolayer TMDs (i.e., WS2, WSe2, MoS2, and MoSe2). We demonstrated that the defect-assisted EEA process of local excitons is enhanced and plays a key role in the exciton relaxation process at high exciton densities of approximately 1012 cm–2 below a Mott density of approximately 1013 cm–2. The measured EEA rates for WS2, WSe2, MoSe2, and MoS2 were 0.016, 0.026, 0.049, and 0.102 cm2/s, respectively, implying that EEA is enhanced as defect states increase in monolayer TMDs. Our results provide a profound insight into the effect of defect states on the EEA process in monolayer TMDs at high exciton densities.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsphotonics.1c00932.Experimental data of the optical microscope images and Raman mapping (Figure S1) and AFM results (Figure S2), EAS and DAS spectra (Figure S3), calculation of saturation intensity (Figure S4), and fitting results (Figure S5 and Table S1) (PDF)This article has not yet been cited by other publications.

Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe$_2$

Long valley lifetime of free carriers in monolayer WSe2

Defect creation in WSe2 with a microsecond photoluminescence lifetime by focused ion beam irradiation

Long valley lifetime of dark excitons in single-layer WSe2

Observation of Ultralong Valley Lifetime in WSe2/MoS2 Heterostructures

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Valley coherent exciton-polaritons in a monolayer semiconductor

Direct Visualization of Exciton Transport in Defective Few-Layer WS2 by Ultrafast Microscopy

Defects inducing anomalous exciton kinetics in monolayer WS2

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Electrically Tunable Non-Radiative Lifetime in WS2/WSe2 Heterostructures

Electrically-tunable non-radiative lifetime in WS2/WSe2 heterostructure

Long-Lived Nanosecond Spin Relaxation And Spin Coherence Of Electrons In Monolayer Mos2 And Ws2

Layer-Dependent Charge State Lifetime of Single Se Vacancies in WSe$_2$

Valley-Polarized Exciton Dynamics in Exfoliated Monolayer WSe$_2$

Ultrafast valley-selective coherent optical manipulation with excitons in WSe$_2$ and MoS$_2$ monolayers

Ultrafast atomic-scale scanning tunnelling spectroscopy of a single vacancy in a monolayer crystal

Valley phonons and exciton complexes in a monolayer semiconductor

Defect-Enhanced Exciton–Exciton Annihilation in Monolayer Transition Metal Dichalcogenides at High Exciton Densities

Ultrafast Electron Transfer with Long-Lived Charge Separation and Spin Polarization in WSe2/C60 Heterojunction

Defects As a Factor Limiting Carrier Mobility in WSe 2 : A Spectroscopic Investigation