Abstract:A new strategy is proposed for constructing ReS2 with high crystallinity 1T′ phase under mild conditions. The electron and bonding properties of vacancy are studied by density functional theory. The results show that the presence of defects reduces the band gap value and changes the state density. The nonlinear optical response of ReS2 is discussed in picosecond time domain. Rhenium disulfide (ReS2) with low structural symmetry and highly spontaneous, exhibits some unique optical and electrical anisotropy properties for developing optoelectronic devices. This work studies the hydrothermal synthesis and the excitonic effects in the linear and nonlinear optical properties of 1T′ phase ReS2. The growth is controlled by adjusting experimental conditions, and its growth mechanism is revealed. The varying degrees of Re vacancy are characterized. They cause the growth direction of ReS2 nanosheets from lateral to agglomeration and the stacks into self‐assembly micro‐nanospheres. The density functional theory explains the electronic and bonding properties of Re vacancy, where the existent defects reduce the band gap and change the states density. Re vacancy increases the conductivity and results in the metallization of ReS2. The photoluminescence intensity of defect emission peak is negatively correlated with the defect level for the enriching vacancies. However, compared with intrinsic peak, it will increase monotonically with the number of bound excitons in defects. Furthermore, the nonlinear absorption properties are obtained by picosecond Z‐scan technique. By adjusting temperature, different degrees of saturation absorption and reverse saturation absorption characteristics appear due to the vacancy effect. The synthesized ReS2 has broad application in photodetectors and optical devices with optical amplitude limiting.

Defect-Engineering-Enhanced Electrical Manipulation of Anisotropic Excitons in Two-Dimensional ReS2

Phase-Engineering-Induced Generation and Control of Highly Anisotropic and Robust Excitons in Few-Layer ReS2.

Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1–x)Se2x Alloys with Distorted 1T Structure

Excitonic Effects in the Linear and Nonlinear Optical Response of Rhenium Disulfide Regulated by Re Vacancy

Defect Formation and Electronic Structure Regulated by Strain Engineering in ReS2

Controllable Defects Implantation in MoS2 Grown by Chemical Vapor Deposition for Photoluminescence Enhancement

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Defect Activated Photoluminescence in WSe2 Monolayer

Defective ReS 2 Triggers High Intrinsic Piezoelectricity for Piezo-Photocatalytic Efficient Sterilization

Defect emission and its dipole orientation in layered ternary Znln2S4 semiconductor

Tunable Anisotropic Extrinsic Self‐Trapped Exciton Emission in Van Der Waals Layered In4/3P2S6

Electronic Structure and Optical Properties of Monolayer $ReS_2$ with Defect Controlled by Strain Engineering

Defect Engineering for Modulating the Trap States in Two-dimensional Photoconductor

Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering

Anisotropic point defects in rhenium diselenide monolayers

Deterministic and Scalable Generation of Exciton Emitters in 2D Semiconductor Nanodisks

Defect Engineering for Modulating the Trap States in 2D Photoconductors.

Defects inducing anomalous exciton kinetics in monolayer WS2

Defect‐Mediated Efficient and Tunable Emission in van der Waals Integrated Light Sources at Room Temperature