Abstract:Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moire superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at similar to 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Gamma-K transition based on a systematic analysis and comparison of experimental photoluminescence spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation approach indicates that both the electron and hole of the excitons are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the so-called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insight into the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures. The twist-angle-modulated excitons in vertically stacked WS2/WSe2 heterobilayers are proven to be an indirect G-K intralayer transition, with a nearly in-plane transition dipole moment.

Revealing the Optical Transition Properties of Interlayer Excitons in Defective WS2/WSe2 Heterobilayers

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Defects inducing anomalous exciton kinetics in monolayer WS2

Revealing the Competition between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS 2

Atypical Defect-Mediated Photoluminescence and Resonance Raman Spectroscopy of Monolayer WS2

Defect-mediated strong exciton-phonon coupling between flower-like WS2 film with vicinity layers

Moire excitons at line defects in transition metal dichalcogenides heterobilayers

Identification of twist-angle-dependent excitons in WS2/WSe2 heterobilayers

<i>In Situ</i> Probing the Localized Optoelectronic Properties of Defective Monolayer WS<sub>2</sub>

Localization and Interaction of Interlayer Excitons in MoSe2/WSe2 Heterobilayers.

Reduced absorption due to defect-localized interlayer excitons in transition metal dichalcogenide-graphene heterostructures

Localization and interaction of interlayer excitons in MoSe$_2$/WSe$_2$ heterobilayers

Influence of Edges and Interlayer Electron-phonon Coupling in WS2/h-BN Heterostructure

Moiré excitons in defective van der Waals heterostructures

Optical Microcavity‐Induced Moiré Exciton Localization in Twisted WSe2 Homobilayer

Photoluminescence Inhomogeneity and Excitons in CVD-grown Monolayer WS2

Observation of split defect-bound excitons in twisted WSe 2 /WSe 2 homostructure

Twisted-Angle-Dependent Optical Behaviors of Intralayer Excitons and Trions in WS2/WSe2 Heterostructure

Observation of Split Defect-Bound Excitons in Twisted WSe2/WSe2 Homostructure

Robust and High Photoluminescence in WS2 Monolayer Through in Situ Defect Engineering