Defect-induced anomalous thermal quenching of photoluminescence in the transition metal dichalcogenide ternary alloy

Navya Biju,Prahalad Kanti Barman,Jibin N. Sunil,Rajeev N. Kini
DOI: https://doi.org/10.1103/physrevmaterials.8.064005
IF: 3.98
2024-06-25
Physical Review Materials
Abstract:We report negative thermal quenching of photoluminescence (PL) in few-layered Mo0.6W0.4Se2 flakes. A comparative study of temperature-dependent PL from two groups of Mo0.6W0.4Se2 flakes, one with defects and the other with negligible defects, shows that this anomalous enhancement in the PL with increasing temperature is due to the dissociation of defect-bound excitons at higher temperatures. The relaxation dynamics of the carriers localized at these defect states were studied using the ultrafast pump-probe technique, which shows that the photogenerated carriers are trapped at these defects on a timescale of ≈3 ps. https://doi.org/10.1103/PhysRevMaterials.8.064005 ©2024 American Physical Society
materials science, multidisciplinary
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