Perspective on defect characterization in semiconductors by positron annihilation spectroscopy

Ilja Makkonen,Filip Tuomisto

DOI: https://doi.org/10.1063/5.0180024

IF: 2.877

2024-01-23

Journal of Applied Physics

Abstract:This Perspective focuses on experimental and theoretical aspects of positron annihilation spectroscopy. This set of methods is highly suitable for identifying and quantifying vacancy-type defects in semiconductors and also allows for analyzing their physics characteristics. We present selected examples from the past decade, where the methods have been used for obtaining timely and useful insights into the defect-controlled phenomenon in narrow-gap (Ge, GaSb) and wide-gap (III-nitride, oxide) semiconductors. We also discuss possible future developments that may allow more detailed studies in novel semiconductor materials and devices with ever more complex lattice structures.

physics, applied

What problem does this paper attempt to address?

The paper primarily explores the application of Positron Annihilation Spectroscopy (PAS) in the characterization of defects in semiconductor materials. Below is a summary of the key issues the paper attempts to address:

### Core Issues of the Paper

- **Defect Identification and Quantification**: Identifying and quantifying vacancy-type defects in semiconductors using Positron Annihilation Spectroscopy.
- **Physical Property Analysis**: Analyzing the physical properties of defects using these methods.
- **Case Studies**: Showcasing examples of the application of this method in narrow bandgap (e.g., germanium, gallium antimonide) and wide bandgap (e.g., nitrides, oxides) semiconductors over the past 10 years.

### Specific Objectives

- **Combination of Experiment and Theory**: Combining experimental observations and theoretical calculations to explore how positrons can serve as an effective tool for detecting vacancy defects.
- **Defect Types and Properties**: Identifying different types of vacancy defects and their electrical, optical, and mechanical properties.
- **Research on New Materials**: Discussing potential future developments to allow more detailed studies in new semiconductor materials and devices with complex lattice structures.

### Main Content

- **Interaction Between Positrons and Defects**: Explaining how positrons are attracted to vacancies and how this interaction affects the positron's lifetime and annihilation behavior.
- **Temperature Effects**: Discussing the impact of temperature changes on the efficiency of positron capture by vacancy defects, especially in negatively charged vacancy defects.
- **Experimental Techniques**: Introducing several experimental techniques, including positron lifetime spectroscopy and Doppler broadening analysis.
- **Theoretical Simulations**: Emphasizing the importance of theoretical simulations, especially in interpreting experimental results and identifying specific defects.
- **Recent Advances**: Showcasing recent research achievements in fields such as germanium, germanium-tin alloys, gallium antimonide, and nitride semiconductors through specific examples.

In summary, this paper aims to gain a deeper understanding of defects in semiconductor materials through Positron Annihilation Spectroscopy and provide guidance for improving material performance.