Abstract:Positron annihilation technique is an atomic-scale characterization method used to analyze the defects and microstructure of materials, which is extremely sensitive to open volume defects. By examining the annihilation behaviour of positrons and electrons in open volume defects, local electron density and atomic structure information around the annihilation site can be obtained, such as the size and concentration of vacancies, vacancy clusters, etc. In recent years, positron annihilation spectroscopy has evolved into a superior tool for characterizing features of material compared to conventional methods. The coincident Doppler broadening technique provides unique advantages for examining the local electronic structure and chemical environment (elemental composition) information around defects due to its effectiveness describe high momentum electronic information. The low momentum portion of the quotient spectrum indicates the Doppler shift generated by the annihilation of valence electrons near the vacancy defect. Changes in the peak amplitudes and positions of the characteristic peaks in the high momentum region can reveal elemental information around the positron annihilation point. The physical mechanism of element segregation, the structural features of open volume defects and the interaction between interstitial atoms and vacancy defects are well-developed in coincidence Doppler broadening technology. In recent years, based on the development of Doppler broadening technology, the sensitivity of slow positron beam coincidence Doppler broadening technology with adjustable energy has been significantly enhanced at a certain depth. Significantly, slow positron beam techniques can offer surface, defect, and interface microstructural information as a function of material depth. It compensates for the fact that the traditional coincidence Doppler broadening technique can only define the overall defect information. Positron annihilation technology has been applied to the fields of second phase evolution in irradiated materials, hydrogen/helium effect, and free volume in thin films, among others, as a result of the continuous development of slow positron beam and the improvement of various experimental test methods based on slow positron beam. In this paper, the basic principles of the coincidence Doppler broadening technique are briefly discussed, and the application research progress of the coincidence Doppler broadening technique in various materials is reviewed by combining the reported developments: 1) the evolution behaviour of nanoscale precipitation in alloys; 2) the interaction between lattice vacancies and impurity atoms in semiconductors; 3) the changes of oxygen vacancy and metal cation concentration in oxide material. In addition, coincidence Doppler broadening technology has been steadily implemented to estimate and quantify the size, quantity, and distribution of free volume holes in polymers.

Quantum Monte Carlo study of Doppler broadening of positron annihilation radiation in semiconductors and insulators

Quantum Monte Carlo Study of Correlation Energy and Pair Correlation Function at Various Electron-Positron Density Ratios: Accurate Calculation of Positron Annihilation Lifetimes in Solids

Systematic investigation of positron annihilation in transition metals from first principles

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Monte Carlo Comparisons to a Cryogenic Dark Matter Search Detector with low Transition-Edge-Sensor Transition Temperature

Research progress of coincidence Doppler broadening of Positron annihilation measurement technology in materials

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

Theoretical Study on Positron 2D-ACAR for Semiconductors

Perspective on defect characterization in semiconductors by positron annihilation spectroscopy

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Charge Diffusion and Repulsion in Semiconductor Detectors

First-Principles Calculation of Positron Annihilation Characteristics in Solids: From Positron to Positronium

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Irradiation-induced Vacancy and Cu Aggregations in Fe–Cu Model Alloys of Reactor Pressure Vessel Steels: State-of-the-art Positron Annihilation Spectroscopy

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Quantum Computing Simulation of a Mixed Spin-Boson Hamiltonian and Its Performance for a Cavity Quantum Electrodynamics Problem

Effect of Vacancy Charge State on Positron Annihilation in Silicon

Positron lifetime and coincidence Doppler broadening study of vacancy-oxygen complexes in Si: experiments and first-principles calculations

Electron Momentum Distributions In Elemental Semiconductors Probed By Positrons

Defect Characterization in Thermoelectric Zn-Sb Systems by Positron Annihilation