Abstract:Two-dimensional (2D) materials have emerged as promising platforms for quantum technologies and optoelectronics, with defects playing a crucial role in their properties. We present a comprehensive density functional theory study of silicon and carbon vacancies in monolayer silicon carbide (1L-SiC), a wide-bandgap 2D semiconductor with potential for room-temperature quantum applications. Using PBE, SCAN, r$^2$SCAN, and HSE06 functionals, we reveal distinct characteristics between Si and C vacancies. Formation energies and charge transition levels show strong functional dependence, with HSE06 consistently predicting higher values and deeper transition levels compared to PBE calculations. Electronic structure analysis demonstrates contrasting behavior: silicon vacancies create highly localized states with strong spin polarization, while carbon vacancies produce more dispersed states with weaker magnetic properties. Vacancy migration studies reveal significantly lower barriers for silicon vacancies compared to carbon vacancies, indicating higher mobility for Si vacancies at moderate temperatures. Optical properties, calculated using PBE-DFPT, show distinct charge-state dependent absorption in the far-infrared region, with positively charged states of both vacancy types demonstrating the strongest response. The complementary characteristics of Si and C vacancies - localized versus dispersed states, different magnetic properties, and distinct optical responses - suggest possibilities for defect engineering in quantum and optoelectronic applications. Our results highlight the critical importance of advanced functionals in accurately describing defect properties and provide a comprehensive framework for understanding vacancy behavior in 2D materials.

Effect of Vacancy Charge State on Positron Annihilation in Silicon

Investigation and Calculation of Positron Lifetimes of Mono-Vacancies in Crystals

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

First principles study of vacancies in Si

Charge effect on the irradiation damage of silicon: Insights from phase-field simulation

Positron lifetime and coincidence Doppler broadening study of vacancy-oxygen complexes in Si: experiments and first-principles calculations

Hole and positron interaction with vacancies and p-type dopants in epitaxially grown silicon

Identification of Vacancy-Oxygen Complexes in Si by Coincidence Doppler Broadening of Positron Annihilation Radiation and First-Principles Calculations

Monovacancies and Na Substitutional Defects in Pbte: Theoretical Positron Annihilation Study

Ab Initio Calculation of Silicon Monovacancy Defect in Amorphous-Sio2/si Interface

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

Diffusivity of the double negatively charged mono-vacancy in silicon

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations

Clustering of vacancy defects in high-purity semi-insulating SiC

Charge state and entropic effects affecting the formation and dynamics of divacancies in 3C-SiC

Quantum Monte Carlo study of Doppler broadening of positron annihilation radiation in semiconductors and insulators

Quantum Monte Carlo Study of Correlation Energy and Pair Correlation Function at Various Electron-Positron Density Ratios: Accurate Calculation of Positron Annihilation Lifetimes in Solids

The Role of Defect Charge, Crystal Chemistry, and Crystal Structure on Positron Lifetimes of Vacancies in Oxides

Vacancy Induced Jahn-Teller Distortion in Silicon and Its Influence to the Electronic Structure

Study of Annihilation Behavior of Positronium in Porous Silicon in Different Atmospheres

Anylasis and Comparison of Several Methods for Calculation of Positron Bulk Lifetime in Perfect Crystals