Analysis of the effects of isoxsuprine on guinea-pig atria and trachea [proceedings].

D. Farrar,A. Verity

IF: 7.3

1976-11-01

British Journal of Pharmacology

Abstract:

What problem does this paper attempt to address?

A 14-Bit Column-Parallel Two-Step SA ADC with On-Chip Scaled Reference Voltages Self-Calibration for CMOS Image Sensor

Jingyuan Chen,Jianxiong Xi,Lenian He,Kexu Sun,Ning Xie

DOI: https://doi.org/10.1109/edssc.2016.7785274

2016-01-01

Abstract:This paper presents a 14-bit column-parallel successive approximation analog-to-digital converter (SA ADC) for CMOS image sensor. The proposed SA ADC utilizes a 7-bit charge redistribution capacitor digital-to-analog converter (CDAC) with four column shared reference voltages to significantly reduce the area and power consumption. An on-chip self-calibration scheme is employed to calibrate the two scaled reference voltages. The calibration technique is free from comparator offset and convenient to implement. Simulation shows that the error of the scaled reference voltages after calibration is less than 0.21 LSB. The proposed SA ADC is implemented in 0.18-μm CMOS technology and achieves a DNL of +0.33/-0.33 LSB and INL of +0.39/-0.33 LSB while consumes 191 μW at a sampling rate of 600 KS/s.
CMOS Digital Temperature Sensor with Self-Correcting Technique

Hui-qiang JIANG,Xu-bin CHEN,Jiong-jiong MO,Zhi-yu WANG,Jia-rui LIU,Hua CHEN,Fa-xin YU

DOI: https://doi.org/10.3969/j.issn.0372-2112

2017-01-01

Abstract:A CMOS temperature sensor with digital output is presented,and a new self-correcting technique is proposed to solve the problem of poor consistency and low yield caused by process variations.By applying the self-correcting technique,the change of the reference voltage in the temperature sensor kernel module is effectively suppressed and the consistency among chips is obviously improved.In this paper,the reference voltage module is simulated with different process corners.By comparing the maximum deviation of the reference voltages in the open and close states of the self-correcting module,the effectiveness of self-correcting technique is validated.The complete design is fabricated in the CSMCB5212 0.5 μm CMOS process,providing an SPI digital interface with 10-bit output data.In the temperature range from-35℃ to 105℃,the inaccuracy of experiment results is merely ±1℃,and the overall power consumption is less than 0.6mW.
An Untrimmed BJT-Based Temperature Sensor with Dynamic Current-Gain Compensation in 55-Nm CMOS Process

Zhong Tang,Yun Fang,Zhenyan Huang,Xiao-Peng Yu,Zheng Shi,Nick Nianxiong Tan

DOI: https://doi.org/10.1109/tcsii.2019.2921889

2019-01-01

Abstract:This brief presents a bipolar junction transistor (BJT)-based CMOS temperature sensor without trimming. A current-mode readout scheme with dynamic current gain compensation is proposed to reduce the error caused by the low current gain beta of the substrate BJT in nanometer CMOS technologies. Combining this readout scheme with techniques, such as chopping and dynamic element matching (DEM), the sensor achieves a high untrimmed accuracy for auto-calibration in thermal management applications. Fabricated in a standard digital 55-nm CMOS process, the sensor shows a measured inaccuracy within +/- 1.7 degrees C (3 sigma) from -40 degrees C to 125 degrees C without calibration. It occupies a die area of 0.0146 mm(2) and has a power consumption of 37 mu W with an adjustable resolution from 12 to 15 bit and a conversion time of 4.1-32.8 ms.
A CMOS Temperature Sensor with Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

Zhong Tang,Yun Fang,Xiao-Peng Yu,Zheng Shi,Nianxiong Tan

DOI: https://doi.org/10.1109/tcsi.2018.2853649

2018-01-01

IEEE Transactions on Circuits and Systems I Regular Papers

Abstract:In this paper, a smart CMOS temperature sensor with a versatile readout scheme is presented. A digital-assisted readout solution is proposed to improve the compatibility of the circuit and maintain the performance of a traditional smart temperature sensor. In addition, the potential multi-operating points of the analog front-end are analyzed, and a compact start-up circuit is designed to make the analog front-end work properly. Fabricated in a standard 0.13 mu m CMOS process, the proposed temperature sensor occupies a silicon area of 0.29 mm(2) and draws a current of 95 mu A from a 2 to 3.6 V supply voltage at the room temperature. Measured results show that the proposed design has the inaccuracy of +/- 0.47 degrees C (3 sigma) from -40 degrees C to 125 degrees C after a single-point temperature calibration. It achieves a resolution of 16 mK at a conversion time of 5.12 ms and a supply sensitivity of less than 0.05 degrees C/V. Thanks to the versatile readout scheme, the proposed temperature sensor is compatible with multi-sensor systems where the readout-circuitry can be shared between different input signals.
A 14-Bit Column-Parallel Two-Step SA ADC with Digital Calibration Based on Scaled References and Redundancy for CMOS Image Sensors

Zhelu Li,Ning Xie,Wei Fan,Jianxiong Xi,Lenian He,Kexu Sun

DOI: https://doi.org/10.1007/s10470-018-1368-1

IF: 1.321

2018-01-01

Analog Integrated Circuits and Signal Processing

Abstract:A 14-bit column-parallel two-step successive approximation (SA) analog-to-digital converter (ADC) with digital calibration based on scaled references and redundancy for CMOS image sensors is presented. A 7-bit area-efficient non-binary capacitor array whose total number is same as the 6-bit one is used to meet the dimension constraints imposed by the pixel pitch of 25 μm in the CMOS image sensor. In each conversion period, 14-bit resolution is realized by 16-times comparison which provides redundancy for calibration. Capacitor mismatch and scaled-reference error both deviate the weight of each bit from its designed value. An off-chip digital calibration method based on statistics is adopted to extract the fabricated weight of each bit in the SA ADC. A tri-level switching scheme is employed for the most 8 significant times comparison to reduce switching power of the capacitor array of the SA ADC. The proposed SA ADC is implemented by using 180 nm CIS process and measured at 1 MS/s. The area of the SA ADC is 1637 × 50 μm2. It consumes 78.47 μA under 3.3 V supply voltage. The INL is improved from + 21/− 21 to + 2.3/− 2.5 LSB, SFDR from 73.56 to 85.17 dB and ENOB from 9.57 to 11.15 bit after calibration in the presence of capacitor mismatch and scaled reference errors. The figure of merit of the ADC is 118 fJ/Conv.-step.
Uniformity Correction of CMOS Image Sensor Modules for Machine Vision Cameras

Gabor Szedo Becker,Róbert Lovas

DOI: https://doi.org/10.3390/s22249733

IF: 3.9

2022-12-12

Sensors

Abstract:Flat-field correction (FFC) is commonly used in image signal processing (ISP) to improve the uniformity of image sensor pixels. Image sensor nonuniformity and lens system characteristics have been known to be temperature-dependent. Some machine vision applications, such as visual odometry and single-pixel airborne object tracking, are extremely sensitive to pixel-to-pixel sensitivity variations. Numerous cameras, especially in the fields of infrared imaging and staring cameras, use multiple calibration images to correct for nonuniformities. This paper characterizes the temperature and analog gain dependence of the dark signal nonuniformity (DSNU) and photoresponse nonuniformity (PRNU) of two contemporary global shutter CMOS image sensors for machine vision applications. An optimized hardware architecture is proposed to compensate for nonuniformities, with optional parametric lens shading correction (LSC). Three different performance configurations are outlined for different application areas, costs, and power requirements. For most commercial applications, the correction of LSC suffices. For both DSNU and PRNU, compensation with one or multiple calibration images, captured at different gain and temperature settings are considered. For more demanding applications, the effectiveness, external memory bandwidth, power consumption, implementation, and calibration complexity, as well as the camera manufacturability of different nonuniformity correction approaches were compared.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
14-Bit Column Readout Circuits with Single-to-differential PGA Using Intentional Offset and Two-Step Scaled-Reference SAR ADC for CMOS Image Sensors

Zhelu Li,Wei Fan,Jianxiong Xi,Lenian He,Ning Xie,Kexu Sun

DOI: https://doi.org/10.1007/s10470-018-1215-4

IF: 1.321

2018-01-01

Analog Integrated Circuits and Signal Processing

Abstract:This paper proposes a 14-bit fully differential Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) with a programmable gain amplifier (PGA) used in the readout circuit of CMOS image sensor (CIS). SAR ADC adopts two-step scaled-reference voltages to realize 14-bit conversion, aimed at reducing the scale of capacitor array and avoiding using calibration to mitigate the impact of offset and mismatch. However, the reference voltage self-calibration algorithm is applied on the design to guarantee the precision of reference voltages, which affects the results of conversion. The three-way PGA provides three types of gains: 3x, 4x, and 6x, and samples at the same time to get three columns of pixel signal and increase the system speed. The pixel array of the mentioned CIS is 1026 × 1024 , and the pixel pitch is 12.5 μ m × 12.5 μ m . The prototype chip is fabricated in the 180 nm CMOS process, and both digital and analog voltages are 3.3 V. The total area of the chip is 6.25 × 18.38 mm2. At 150 kS/s sampling rate, the SNR of SAR ADC is 71.72 dB and the SFDR is 82.91 dB. What is more, the single SAR ADC consumes 477.2 uW with the 4.8 V PP differential input signal and the total power consumption of the CIS is about 613 mW.
A method to reduce process-related sensitivity in sub-threshold ICs and its circuit implementation

Luo Hao,Han Yan,Ray Cheung

DOI: https://doi.org/10.1109/PRIMEASIA.2010.5604922

2010-01-01

Abstract:This paper provides a novel bulk-compensated technique used in sub-threshold integrated circuits (ICs), solving the problem that MOS transistors in the sub-threshold area are extremely sensitive to the issue of process variation. The bulk-compensated technique builds up a unique "detecting-feedback" loop, and achieves an effective compensation for the process-related fluctuation of MOS transistors through bulk potential modulation. A simple circuit implementation of the proposed technique is also presented, which is implemented in 0.13 μm CMOS mixed-signal process. With the introduction of the bulk-compensated circuit, the sensitivity of MOS transistors to process variation in the sub-threshold area is greatly reduced.
Research status of dark current in CMOS image sensor

Lei Yan,Feng Shi,Hongchang Cheng,Ye Yang,Bin Ren,Chao Xiao,Xiaohui Zhang,feng shi,hongchang cheng,ye yang,bin ren,chao xiao,xiaohui zhang

DOI: https://doi.org/10.1117/12.2586827

2021-03-12

Abstract:After more than 50 years of development, CMOS image sensor has become the most mainstream image sensor. At present, the most used solid-state imaging devices directly image optical signals through the internal photoelectric effect, while the EBCMOS(electron bombardment CMOS) is more popular in the military field. In order to achieve low illumination and high quality image detector, people put forward higher requirements for the minimum operating illumination, fixed pattern noise, dynamic working range and other indicators of CMOS image sensor, and dark current is an important factor affecting these indicators. There are many literatures about the research of dark current in CMOS image sensor, but there is no systematic report on the research of dark current in CMOS image sensor. This paper systematically summarizes the research situation of dark current in CMOS image sensor. In this paper, the mechanism of dark current generation of CMOS image sensor is summarized firstly. Secondly, the influence of structure design, fabrication process and working environment on the dark current index of CMOS image sensor is summarized respectively, and the research situation of dark current compensation method is summarized again. Finally, combining with the generation mechanism of dark current of CMOS image sensor, the formation mechanism and influencing factors of dark current of new proposed electron bombardment CMOS(EBCMOS) image detector are analyzed.
Thermo-Hygro-Mechanical Design and Reliability Analysis for CMOS Image Sensor

Hsiang-Chen Hsu,Hui-Yu Lee,Yu-Cha Hsu,Shen-Li Fu

DOI: https://doi.org/10.1080/01495730802194532

IF: 3.456

2008-09-19

Journal of Thermal Stresses

Abstract:In this paper, the characteristics of polymeric packaging materials for Pre-mold QFN type CMOS Image Sensor (CIS) have been carefully investigated. Hygro-mechanical property, the coefficient of moisture expansion (CME) for different materials was measured through Thermal Mechanical Analysis (TMA) and Thermal Gravitational analysis (TGA) at given humidity and temperature. Moisture absorption/desorption diffusivity were determined under Arrhenius behavior. The transient moisture diffusion analysis described by Fick's equation is performed to evaluate the overall moisture distribution. In accordance with the JEDEC pre-conditioning standard JESD22-A120, reliability and thermal design were carried out due to mismatch of the coefficient of thermal expansion (CTE) and CME for multi-material package of CIS. A three-dimensional solid model of CIS based on finite element ANSYS software is developed to predict the thermal-induced strain, hygroscopic swelling deformation and the residual thermo-hygro-mechanical stress distributions. A series of comprehensive parametric studies were conducted in this research.

thermodynamics,mechanics
Design and Simulation of an Application Specific CMOS Image Sensor

Syed Mudassir,Xiaoyang Cao,Shaojie Su,Hong Chen,Zhihua Wang

DOI: https://doi.org/10.1109/icecome.2018.8644733

2018-01-01

Abstract:This paper presents a design and simulation of the voltage mode CMOS image sensor (CIS) for a visual aided system, designed for a pose estimation calculation in the total hip replacement surgeries (THR). Firstly, a new imaging system architecture for the application is proposed in this manuscript then a theoretical analysis is discussed to minimize the factors causing nonlinearity in CIS. Secondly, a simulation for the proposed design is presented to give the performance analysis. The CMOS image sensor comprises a pixel array of size 200x200, which is designed in TSMC 0.18um 1-poly 6-metal standard CMOS process technology with a pixel size of 15um and a fill factor of 60%. Combinational logic with the vertical and horizontal scanning DFF chains have been designed to produce input global control signals and read the output signals generated by each pixel respectively. The simulation results depict the right output signals for each pixel within the respective row and column with the changing input signal. Finally, a complete layout for the proposed design is presented which measures 3mm x 3mm in dimension.
Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application

Le Luo

DOI: https://doi.org/10.1166/jno.2023.3454

2023-07-01

Journal of Nanoelectronics and Optoelectronics

Abstract:The integration of on-chip temperature sensors within various systems, industrial Internet of Things (IoT), and wireless sensor networks is greatly facilitated by their small size, cost-effectiveness, and capability to provide direct digital output. However, the diverse application scenarios pose challenges in designing these sensors. On one hand, real-time clock calibration demands high-precision temperature sensors, while on-chip heat management emphasizes compactness and low-voltage operation. Additionally, streamlining the calibration cost for mass production holds significant practical value. Addressing these challenges, this study systematically investigates on-chip complementary metal-oxide-semiconductor (CMOS) temperature sensors based on distinct signal domains processed by temperature readout circuits. Specifically, the research commences by analyzing the issues of several degeneracy points in the front-end circuit of a bipolar junction transistor (BJT) temperature sensor with current gain compensation technology. To address the intricate design challenges in advanced technologies and calibration complexities in industrial applications, dynamic component matching, current gain compensation, and chopper stabilization are harnessed. A novel dynamic current gain canceling technique for temperature readout is introduced, enhancing temperature measurement accuracy without incurring additional power consumption or area overhead. Ultimately, an all-digital CMOS temperature sensor is realized using the SMIC 55 nm CMOS process. Occupying a mere 0.29 mm2 of core area, the design operates efficiently across a wide supply voltage range of 1.2 V to 3.6 V. Covering a temperature spectrum from −40 °C to 125 °C, the sensor demonstrates a calibration error of just ±0.7 °C. This achievement is attributed to the incorporation of the proposed dynamic current gain compensation technique.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Jiaming Tan,B. Buttgen,A. J. P. Theuwissen,Bernhard Buttgen,Albert J. P. Theuwissen

DOI: https://doi.org/10.1109/jsen.2012.2186287

IF: 4.3

2012-06-01

IEEE Sensors Journal

Abstract:This paper presents a radiation degradation study on 4-Transistor (4T) complementary metal-oxide-semiconductor (CMOS) image sensors designed in standard 0.18-μm technology. The significant contribution of this paper is a systematic evaluation of the X-ray radiation effects on image sensors from the individual device level, to the pixel level and to the level of the entire sensor. The major degradation parameters of the sensor have been analyzed. This paper also includes test structures of varying geometries of in-pixel MOSFETs, pinned photodiodes (PPD), and transfer gates (TG). Characterization was performed during different X-ray doses up to 109 krad. The major degradation-an increase in the dark signal-is analyzed by modifying the TG charge transfer time and integration time. The PPD and the TG are the elements most sensitive to the dark signal of the sensor. The radiation-related dimensional effects on the sensors are also evaluated, which show different results compared to 3T pixels. The transfer-gate length influences the dark signal due to not only the electric field variation in the TG channel but also the local defect generations. In-pixel MOSFETs are used to identify the origin of increases in radiation-induced dark signal. Shallow trench isolation (STI) oxides are responsible for the radiation degradation of the sensor. A slight degradation of the quantum efficiency was observed after radiation in the short-wavelength region. Basic hardening-by-design techniques are also presented. The discussion results of the radiation-related dimensional effects on the sensors together with the STI effect can be used as a guideline for future layout designs of radiation-tolerant sensors. Identifying the pixel dark current origin can help to determine where and how to suppress the pixel dark current generation more effectively.

engineering, electrical & electronic,instruments & instrumentation,physics, applied
Investigation of CMOS Image Sensor Dark Current Reduction by Optimizing Interface Defect

Wuzhi Zhan,Zhengying Wei,Yansheng Wang,Wei Zhou,Chang Sun,Jun Qian,Yuhang Zhao

DOI: https://doi.org/10.1109/cstic.2017.7919742

2017-01-01

Abstract:Dark current (DC) was one of the most critical parameters of CMOS image sensors (CIS), and interface defects during semiconductor fabrication process dominate the DC performance. The research investigated Tx Negative-Bias / P-Well and P+ IMP in this paper, and achieved extreme low DC at high temperature of 60 °C. Firstly, Tx negative bias was used to restrict the Poly/Gate OX/Si substrate interface defects. The DC reduced 83.9% while −0.7 V Negative-Bias implemented on Tx. Secondly, P-Well IMP conditions were studied for reducing the Interface defects of shallow trench isolation (STI). The DC could decrease 39.8 mV/s by increasing Boron dosage of P-Well. Thirdly, photodiode surface IMP (P+) was researched. The suppression of DC induced by PD surface interface defects would decrease 20 mV/s with experimental condition.
Scene-based nonuniformity compensation for imaging sensors

P M Narendra

DOI: https://doi.org/10.1109/tpami.1982.4767196

Abstract:Multidetector imaging focal plane arrays like CCD TV cameras and infrared arrays possess large detector-to-detector dark current (offset) and responsivity (gain) variations which can completely mask the useful information. Conventional compensation techniques require temperature references of constant radiance over the entire field of view and a mechanical/electrooptical shutter to calibrate the focal plane. This detracts from the mechanical simplicity of multi-detector staring (nonscanning) focal planes. This correspondence describes a real-time offset and responsivity (gain) compensation technique which dispenses with temperature references and shutters in staring focal planes. It makes use of the scene statistics for calibration and continuously updates the compensation coefficients without interrupting the field of view. The results of real-time simulations of this technique with a number of sensors are presented. Real-time LSI/VLSI hardware architectures are addressed. The technique can be implemented with the addition of very little hardware to a conventional compensation technique requiring temperature references. The technique is also suitable for multi-detector scanning focal planes and for the removal of shading in TV sensors as well.
A Non-Linear Temperature Compensation Model for Improving the Measurement Accuracy of an Inductive Proximity Sensor and Its Application-Specific Integrated Circuit Implementation

Li Wang,Hui-Bin Tao,Hang Dong,Zhi-Biao Shao,Fei Wang

DOI: https://doi.org/10.3390/s20175010

IF: 3.9

2020-09-03

Sensors

Abstract:The non-linear characteristic of a non-contacting Inductive Proximity Sensor (IPS) with the temperature affects the computation accuracy when measuring the target distance in real time. The linear model based method for distance estimation shows a large deviation at a low temperature. Accordingly, this paper presents a non-linear measurement model, which computes the target distance accurately in real time within a wide temperature range from −55 °C to 125 °C. By revisiting the temperature effect on the IPS system, this paper considers the non-linear characteristic of the IPS measurement system due to the change of temperature. The proposed model adopts a non-linear polynomial algorithm rather than the simple linear Look-Up Table (LUT) method, which provides more accurate distance estimation compared to the previous work. The introduced model is fabricated in a 0.18 μm Complementary Metal Oxide Semiconductor (CMOS) process and packaged in a CQFN40. For the most commonly used sensing distance of 4 mm, the computed distance deviation of the Application-Specific Integrated Circuit (ASIC) chips falls within the range of [−0.2,0.2] mm. According to the test results of the ASIC chips, this non-linear temperature compensation model successfully achieves real-time and high-accuracy computation within a wide temperature range with low hardware resource consumption.

engineering, electrical & electronic,chemistry, analytical,instruments & instrumentation
Pathogenesis of diethylnitrosamine-induced tumors in the trachea of the Syrian golden hamster.

H. Reznik-Schüller

DOI: https://doi.org/10.1016/S0344-0338(80)80217-2

1980-06-01

Abstract:
Nonuniformity Compensation For Ir Focal Plane Array Sensors

ronda venkateswarlu,m h er,y h gan,yew c fong

DOI: https://doi.org/10.1117/12.280310

1997-01-01

Abstract:Recent reports indicate that cooled and uncooled IR focal plane array sensors are progressing to a field-worthy level for commercial and defence applications. They offer higher sensitivity, amenability to signal processing and mechanical simplicity. However these sensors contain large detector-to-detector dark current (offset) and responsivity (gain) variations. These variations result in a severe problem called fixed pattern noise that can mask/distort the image obtained from the sensor. The correction process is generally termed as nonuniformity compensation. Conventional two-point compensation techniques are accurate enough, but require built-in controllable temperature references along with mechanical and electrooptical shutters. Therefore this compensation technique detracts the mechanical simplicity of using IR focal plane arrays. Scene-based nonuniformity techniques dispenses with the requirement of temperature references and shutters, but are not accurate enough for certain applications.This paper discusses two-point and scene-based nonuniformity compensation algorithms and proposes an empirical formula to automatically calculate the scene constants, which is an essential step towards practical applications. This paper reports the analyzed results of testing the algorithms on a number of IR images. A practical problem of 'artifacts' which arise when using scene-based nonuniformity compensation is also discussed. A common hardware scheme to implement both the algorithms is also presented in this paper.
Noise Improvement and High Dynamic Range in a CMOS Image Sensor With Shift Biasing Structure

Yang Qu,Hongwei Liang,Shanshan Lou,Guoqiang Zhong,Yu Cheng,Qian Jiang,Yuchun Chang

DOI: https://doi.org/10.1109/ted.2024.3450650

IF: 3.1

2024-09-28

IEEE Transactions on Electron Devices

Abstract:In this article, a noise improvement and dynamic range (DR) enhanced CMOS image sensor (CIS), using a shift biasing structure, is proposed. The shift biasing pixel is constructed from a conventional 4T pixel and three additional transistors, including a bias transistor (BT) and two switch transistors. The BT works as a switch to connect the source and drain to accumulate electrons in the source follower (SF) in shift biasing mode and provides an extra capacitance to enlarge the capacity of floating diffusion (FD) in low gain (LG) mode. Electron distribution and noise performance of SF are simulated to prove the function of shift biasing pixels. A prototype sensor, with a -pixel array, is fabricated with a 180 nm CIS process. Measurement shows a temporal noise of 2 e is achieved, which is a 2 e noise improvement compared with the reference 4T readout mode of shift biasing pixel. Additionally, an over 92 dB DR is realized by combining shift biasing mode and LG mode without any specific process or complex control circuits.

engineering, electrical & electronic,physics, applied
All CMOS Temperature, Supply Voltage and Process Independent Current Reference

Wang Yi,He Lenain,Yan Xiaolang

DOI: https://doi.org/10.1109/icasic.2007.4415702

2008-01-01

Abstract:This paper describes an all CMOS current reference which generates temperature, supply voltage and process independent reference current. In such circuit, sub-threshold design and the body effect have been used to do the temperature compensation. Since only CMOS transistors are used here, the impact of process variation on reference current has been minimized. Cascode and feedback structure have been used to improve the power supply reject ratio. The Precision of reference current is +/- 5.2% when considering the process, supply voltage and temperature variation at the same time. The circuit has been designed and simulated with CSMC 0.5um mixed-signal process.

Analysis of the effects of isoxsuprine on guinea-pig atria and trachea [proceedings].

A 14-Bit Column-Parallel Two-Step SA ADC with On-Chip Scaled Reference Voltages Self-Calibration for CMOS Image Sensor

CMOS Digital Temperature Sensor with Self-Correcting Technique

An Untrimmed BJT-Based Temperature Sensor with Dynamic Current-Gain Compensation in 55-Nm CMOS Process

A CMOS Temperature Sensor with Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

A 14-Bit Column-Parallel Two-Step SA ADC with Digital Calibration Based on Scaled References and Redundancy for CMOS Image Sensors

Uniformity Correction of CMOS Image Sensor Modules for Machine Vision Cameras

14-Bit Column Readout Circuits with Single-to-differential PGA Using Intentional Offset and Two-Step Scaled-Reference SAR ADC for CMOS Image Sensors

A method to reduce process-related sensitivity in sub-threshold ICs and its circuit implementation

Research status of dark current in CMOS image sensor

Thermo-Hygro-Mechanical Design and Reliability Analysis for CMOS Image Sensor

Design and Simulation of an Application Specific CMOS Image Sensor

Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application

Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Investigation of CMOS Image Sensor Dark Current Reduction by Optimizing Interface Defect

Scene-based nonuniformity compensation for imaging sensors

A Non-Linear Temperature Compensation Model for Improving the Measurement Accuracy of an Inductive Proximity Sensor and Its Application-Specific Integrated Circuit Implementation

Pathogenesis of diethylnitrosamine-induced tumors in the trachea of the Syrian golden hamster.

Nonuniformity Compensation For Ir Focal Plane Array Sensors

Noise Improvement and High Dynamic Range in a CMOS Image Sensor With Shift Biasing Structure

All CMOS Temperature, Supply Voltage and Process Independent Current Reference