Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices

Strain-engineering the Schottky barrier and electrical transport on MoS2

Electronic transport modulation on few-layers suspended MoS$_2$ under strain

Strain-Enhanced Mobility of Monolayer MoS2

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Elucidating Piezoelectricity and Strain in Monolayer MoS 2 at the Nanoscale Using Kelvin Probe Force Microscopy

Influences of Contact Metals on the Performances of MoS2 Devices under Strains

Force and light tuning vertical tunneling current in the atomic layered MoS2.

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Vertical strain engineering of Van der Waals heterostructures

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Strain Effect Engineered in Α-Al2o3/monolayer MoS2 Interface by First Principle Calculations

Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs

Synthesis of built-in highly strained monolayer MoS2 using liquid precursor chemical vapor deposition

Lateral junctions of transition metal dichalcogenides as ballistic channels for straintronic applications

Strain-Engineered Ferroelectricity in 2H Bilayer MoS 2