Abstract:Two-dimensional metal dichalcogenides have garnered significant interest in the realm of electronic applications on account of their tunable electronic structures and high carrier mobility. Utilizing first-principles calculations and deformation potential (DP) theory, a comprehensive investigation on the electronic, mechanical, and carrier transport properties of 1T-SnS 2 monolayer under strain engineering is investigated in this work. The 1T-SnS 2 monolayer emerges as energetically stable within an applied equal-biaxial strain interval of −8% to 8%, satisfying Born's criterion for the elastic constants and thus manifesting remarkable mechanical stability. The lattice parameter, bond length, bond angle, and bandgap dynamically respond to the applied equal-biaxial strain. The band structure calculated using generalized gradient approximation (GGA) and spin-orbit coupling (SOC) of the 1 T-SnS 2 monolayer demonstrates the characteristic of an indirect bandgap semiconductor, accompanied by tunable bandgap under strain engineering. Additionally, the carrier transport properties of 1T-SnS 2 monolayer under strain engineering are also evaluated on the basis of DP theory, and a pronounced anisotropy is discovered in the effective mass, carrier relaxation time, and carrier mobility along the x - and y -direction. Notably, the application of a strain of −4% and 4% on the 1T-SnS 2 monolayer has resulted in high electron mobility of 6233.21 cm 2 /V·s and hole mobility of 1195.62 cm 2 /V·s. Our present work not only underscores the substantial influence of strain engineering on the electronic, mechanical, and carrier transport properties of 1 T-SnS 2 monolayer but also provides critical insights into the strain-based tuning of two-dimensional metal dichalcogenides for electronics and optoelectronics.

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Strain-Enhanced Mobility of Monolayer MoS2

Strain Improving the Performance of a Flexible Monolayer MoS2 Photodetector

Uncovering the Effects of Metal Contacts on Monolayer MoS2

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Mobility Enhancement of Strained MoS2 Transistor on Flat Substrate.

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Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

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Evolution of Local Strain in Ag-deposited Monolayer MoS2 Modulated by Interface Interactions

Effective Strain Engineering of 2D Materials via Metal Deposition

Electronic transport modulation on few-layers suspended MoS$_2$ under strain

Carrier mobility tuning of MoS2 by strain engineering in CVD growth process

Improved Strain Transfer Efficiency in Large-Area Two-Dimensional MoS2 Obtained by Gold-Assisted Exfoliation

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Tailoring the electronic, mechanical, and carrier transport properties of 1T‐SnS 2 monolayer via strain engineering: A first-principles study

Tailoring the Electronic, Mechanical, and Carrier Transport Properties of 1t‐sns2 Monolayer Via Strain Engineering: A First-Principles Study

Probing Evolution Of Local Strain At Mos2-Metal Boundaries By Surface-Enhanced Raman Scattering

Giant Thermal Conductivity Enhancement in Multilayer MoS2 under Highly Compressive Strain

Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution