Wolff-Parkinson-White syndrome in the neonate.

G. Wolff,J. Han,J. Curran

DOI: https://doi.org/10.1016/0002-9149(78)90015-2

1978-03-01

Abstract:

What problem does this paper attempt to address?

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

X. Jia,D. Di,H. Xia,L. Wu,Z. Lin,G. Conibeer

DOI: https://doi.org/10.1016/j.jnoncrysol.2012.11.012

IF: 4.458

2013-01-01

Journal of Non-Crystalline Solids

Abstract:Optical constants of silicon quantum dots (Si QDs) in SiO2/Si3N4 hybrid matrix on quartz substrates have been determined in the wavelength range of 350–2500nm. Forouhi–Bloomer (F-B) dispersion model is applied to describe the optical properties of silicon nanocrystals and the mismatch due to global fitting is fixed point by point. To extract the specific optical bandgap of silicon nanocrystal samples, Tauc-plots with γ=1/2 and γ=1/3 are used and discussed for the spectral range of 2eV–3eV. The effect of quantum dot size on the optical bandgap is explored. The results from both Tauc-plot and photoluminescence show the trend that the optical bandgap increases with decreasing quantum dot size, which agrees with the prediction of quantum confinement.
Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Dawei Di,Ivan Perez-Wurfl,Gavin Conibeer,Martin A. Green

DOI: https://doi.org/10.1117/12.859715

2010-01-01

Abstract:Si quantum dots in SiO(2)/Si(3)N(4) hybrid matrix on quartz substrates were fabricated by magnetron sputtering of alternating silicon rich oxide and Si(3)N(4) layers followed by different post-deposition anneals. X-ray diffraction results indicate that the average dimension of the Si QDs ranges from 1.6 to 5.2 nm. The size and crystallisation of the Si nanocrystals are dependent on a number of factors, including the annealing condition, the SRO thickness and the Si(3)N(4) barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si(3)N(4) barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements indicate that the apparent bandgap of the samples investigated in this work is in the range 1.12-1.67 eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data reveals that the PL peak energy does not only depend on the size of the nanocrystals, but also affected by other details of the nanocrystal formation. A simple core-shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material.
Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

D. Di,I. Perez-Wurfl,G. Conibeer,M. A. Green

DOI: https://doi.org/10.1016/j.solmat.2010.07.018

IF: 6.9

2010-01-01

Solar Energy Materials and Solar Cells

Abstract:In this work, Si quantum dots in SiO2/Si3N4 hybrid matrix on quartz substrates were synthesized by magnetron sputtering of alternating silicon rich oxide and Si3N4 layers followed by different post-deposition anneals. XRD results indicate that the average dimension of the Si nanocrystals varies from 1.6 to 5.2nm. The size and crystallization of the Si nanocrystals are dependent on a number of factors, including the annealing method, the SRO thickness and the Si3N4 barrier thickness, as evidenced in XRD and Raman measurements. In particular, thicker Si3N4 barrier layers seem to be able to suppress the growth of Si nanocrystals more effectively. PL measurements suggest the apparent bandgap of the samples investigated in this work is in the range 1.12–1.67eV, which demonstrates the effect of quantum confinement. More interestingly, analysis of the PL data using the modified EMA equations clearly suggests that the PL peak energy not only depends on the size of the nanocrystals but also gets affected by other details in nanocrystal growth. A tentative core–shell model is constructed to illustrate our explanation. These findings offer a preliminary understanding of the nanocrystal growth and radiative recombination processes in this newly synthesized material for photovoltaic applications.
Quantum size effects and tunable visible photoluminescence in a-Si:H/nc-Si:H superlattices

Asha Yadav,Pratima Agarwal,Rana Biswas

DOI: https://doi.org/10.1007/s10854-019-00763-w

2019-01-24

Abstract:Quantum size effects are commonly observed in semiconductor nanocrystals and quantum dots. Here, we demonstrate unexpected quantum size effects in an unusual bulk system with multiple interfaces, consisting of alternating layers of nanocrystalline silicon (nc-Si:H) and amorphous silicon (a-Si:H) material thin films. The nc-Si:H layers consist of silicon nanocrystals embedded in an amorphous matrix, with an amorphous-crystalline interface separating the two structures. Plasma-enhanced chemical vapor deposition was utilized to grow nanocrystalline-amorphous silicon superlattices with a varying thickness of the nanocrystalline layer. Strong visible photoluminescence at room temperature was deconvoluted into individual peaks. As the nanocrystalline silicon layer thickness was increased from 5 to 20 nm, the photoluminescence spectra red-shifted with the emission wavelength varying as d2 (d is the size of the nanocrystallites), the characteristic signature underlying quantum size effects. The size d of the nanocrystals was estimated by the measured shift of the Raman peak, and could be tuned by varying the thickness of the nc-Si:H layers. High resolution transmission electron microscopy show nanocrystals with a narrow size distribution, in an amorphous matrix. We also observe long wavelength photoluminescence from interfacial states that leads to persistent photconductivity. Nanocrystalline-amorphous superlattices offer a unique pathway for synthesizing embedded nanocrystals with controlled sizes and photonic signatures.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Mechanism for the Correlated Swinging of Photoluminescence Intensity and Peak Energy Shift with Sizes of Nanoscale Si Particles

SH Wang,LK Liao,GY Qin,GG Qin

DOI: https://doi.org/10.1088/0253-6102/34/4/593

2000-01-01

Communications in Theoretical Physics

Abstract:Based on the quantum confinement-luminescence center model, we focus on the relationship between the photoluminescence (PL) spectra and sizes of nanoscale silicon particles. We find that when there are two kinds of luminescence centers (LC) in the oxide layer surrounding the silicon particles, both the integrated PL intensity and the spectral peak position swing with reducing the sizes of silicon particles, which is different from the monotonous blueshift of peak position predicted by quantum confinement model. By changing the concentrations of LC we find the correlation between the spectral peak position and the integrated PL intensity when the size of silicon particles is reduced. The effects of other parameters such as the half width of size distribution and the position of photon emission levels of LC are also found to be important.
Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Feilong Wang,Qiongrong Ou,Shuyu Zhang

DOI: https://doi.org/10.1103/physrevb.106.155425

2022-01-01

Abstract:Silicon photoluminescence and lasing have been issues critical to breaking through bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct band gap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the T-T-like transition, contrary to the conclusions from the effective mass approximation, and that T-X mixing leads to a quasidirect band gap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence-a phase transition from weak (or no) luminescent state to strong optical transition, which will aid attempts at realizing high radiative rate NC materials and application-level Si lasers.
High Luminescence in Small Si/SiO2 Nanocrystals: A Theoretical Study

Roberto Guerra,Stefano Ossicini

DOI: https://doi.org/10.1103/PhysRevB.81.245307

2010-08-31

Abstract:In recent years many experiments have demonstrated the possibility to achieve efficient photoluminescence from Si/SiO2 nanocrystals. While it is widely known that only a minor portions of the nanocrystals in the samples contribute to the observed photoluminescence, the high complexity of the Si/SiO2 interface and the dramatic sensitivity to the fabrication conditions make the identification of the most active structures at the experimental level not a trivial task. Focusing on this aspect we have addressed the problem theoretically, by calculating the radiative recombination rates for different classes of Si-nanocrystals in the diameter range of 0.2-1.5 nm, in order to identify the best conditions for optical emission. We show that the recombination rates of hydrogenated nanocrystals follow the quantum confinement feature in which the nanocrystal diameter is the principal quantity in determining the system response. Interestingly, a completely different behavior emerges from the OH-terminated or SiO2-embedded nanocrystals, where the number of oxygens at the interface seems intimately connected to the recombination rates, resulting the most important quantity for the characterization of the optical yield in such systems. Besides, additional conditions for the achievement of high rates are constituted by a high crystallinity of the nanocrystals and by high confinement energies (small diameters).

Materials Science,Mesoscale and Nanoscale Physics
Theory on the Quantum Confinement Luminescence Center Model for Nanocrystalline and Porous Si

G Qin,GG Qin

DOI: https://doi.org/10.1063/1.366068

IF: 2.877

1997-01-01

Journal of Applied Physics

Abstract:This article demonstrates, from the theoretical paint off view, chat owing to the phonon-assisted relaxation rate of the excited electron-hole pair's transiting to lower states decreases as the scale of Si particle is reduced, the optically excited electron-hole pair in the nanometer silicon particle with sufficient small scale generally tunnel inter the SiOx layers which enclose the Si particles and recombine radiatively through the luminescence centers there to emit visible Sight rather than recombine radiatively in the Si particles. It is proved also that when the density of the luminescence center is 2.5X10(22)/m(3) the upper limit of the average scale of the nanometer silicon particles in the ensemble capable of emitting red light in room temperature is around 8.7 nm, which is. much bigger than the generally estimated value of 3 nm. (C) 1997 American Institute of Physics.
Quantum Size-Dependent Luminescence and Nonlinear Optical Properties of Silicon Quantum Dots/sio2 Multilayer

Pei Zhang,Shaojun Li,Dongke Li,Linjiao Ren,Zirui Qin,Liying Jiang,Jun Xu

DOI: https://doi.org/10.1016/j.optlastec.2022.108706

2023-01-01

Abstract:The luminescence and nonlinear optical properties of silicon quantum dots (Si QDs)/SiO2 multilayers with different QDs diameters (2.5, 3 and 4 nm) were investigated by utilizing continue wave (325 nm) and picosecond laser (t(p) = 25 ps, lambda = 1064 nm), respectively. It was found that both the linear and nonlinear optical properties of Si QDs/SiO2 multilayers strongly depended on the QDs size. The photoluminescence intensity could be enhanced by similar to 32-fold, and about 17 times increase in the saturable absorption (SA) coefficient was achieved, which could be ascribed to the controllable density of interface-states as well as their coupling effect with the Si QDs core states. Moreover, a transformation from reverse saturable absorption (RSA) characteristic through two-step absorption process into the SA behavior due to the interface-state filling effect was observed when increasing the incident laser intensity. We proposed that the ultrafast free carries trapping process by the interface states would greatly influence the self-defocusing effect. In addition, the free carries absorption and SA effect should be considered in accounting for the variation of nonlinear parameters as changing the pump intensity. Our results suggest that the widely tunable SA feature through controlling the Si QDs size provides great potential to develop high-efficient Si QDs-based nonlinear optical devices such as passive mode-locking or Q-switching laser.
The Role of Silicon Oxide Layers in Luminescence of Ensembles of Silicon Quantum Dots

SH Wang,GY Qin,SF Ren,GG Qin

DOI: https://doi.org/10.1088/0253-6102/35/3/371

2001-01-01

Communications in Theoretical Physics

Abstract:Based on the quantum confinement-luminescence center model, to ensembles of spherical silicon nanocrystals (nc-Si) containing two kinds of luminescence centers (LCs) in the SiOinfinity layers surrounding the nc-Si, the relationship between the photoluminescence (PL) and the thickness of the SiOinfinity layer is studied with the excitation energy flux density as a parameter. When there is no SiOinfinity layer surrounding the nc-Si, the electron-heavy hole pair can only recombine inside the nc-Si, then the PL blueshift with reducing particle sizes roughly accords with the rule predicted by the quantum confinement model of Canham. When there presences a SiOinfinity layer, some of the carriers may tunnel into it and recombine outside the nc-Si at the LCs to emit visible light. The thicker the SiOinfinity layer is, the higher the radiative recombination rate occurred outside the nc-Si will be. When the central scale of the nc-Si is much smaller than the critical scale, the radiative recombination rate outside the nc-Si dominates, and visible PL will be possible for some nc-Si samples with big average radius, greater than 4 nm, for example. When there is only one kind of LC in, the SiOinfinity layer, the PL peak position does not shift with reducing particle sizes. All these conclusions are in accord with the experimental results. When there are two or more kinds of LCs in the SiOinfinity layer, the PL peak position energy and intensity swing with reducing particle sizes.
Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Michael Greben,Petro Khoroshyy,Xiangkai Liu,Xiaodong Pi,Jan Valenta

DOI: https://doi.org/10.1063/1.4993584

IF: 2.877

2017-01-01

Journal of Applied Physics

Abstract:A comprehensive study of the spectrally resolved photoluminescence (PL) decay kinetics of dodecyl-passivated colloidal silicon nanocrystals (Si NCs) is presented. The correct treatment of average decay lifetime is demonstrated. We report on importance to distinguish the external quantum efficiency (QE) from the internal QE. The external QE of the ensemble of Si NCs is measured to be similar to 60%, while the internal QE of Si NCs emitting around similar to 1.5 eV is evaluated to be near unity. This difference between internal and external QE is attributed to a fraction of "dark" (absorbing but non-emitting) Si NCs in the ensemble. This conclusion is based on the analysis of deconvoluted size-selected decay curves retrieved by the presented mathematical procedure. The homogeneous line-broadening is estimated to be around 180 meV by experimentally challenging single-NC PL measurements. In addition, radiative lifetimes are calculated by the envelope function approximation and confirm the observed exponential increase of lifetime with decreasing emission photon energy. Published by AIP Publishing.
Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Feilong Wang,Qiongrong Ou,Shuyu Zhang

DOI: https://doi.org/10.48550/arxiv.2209.07747

2022-01-01

Abstract: Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct-bandgap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the {\Gamma}-{\Gamma} -like transition, contrary to the conclusions from the effective mass approximation (EMA) and that {\Gamma}-X mixing leads to a quasi-direct bandgap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state-induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement (QC) distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence--a phase transition from weak (or none) luminescent state to strong optical transition, which will aid attempts at realizing high-radiative-rate NCs materials and application-level Si lasers.
Postoperative Surveillance of Differentiated Thyroid Carcinoma: A Selective Approach

M. Conrad,Keshav Pandurangi,Manesh Parikshak,E. D. Castillo,G. Talpos

DOI: https://doi.org/10.1177/000313480306900312

2003-03-01

The American Surgeon

Abstract:This review was conducted to evaluate the selective use of 131I whole-body scanning (WBS) and radioablation (RA) after thyroidectomy for patients with differentiated thyroid carcinoma (DTC). A review of patients undergoing thyroidectomy for DTC between July 1, 1980 and December 31, 1999 was performed. Postoperative surveillance involved a selective RA protocol based on a modification of the AMES criteria (age, metastases, extent of cancer, size, and multifocality of tumor). Lower-risk patients were followed by yearly thyroglobulin (Tg) levels and physical examinations (PE) whereas higher-risk patients additionally underwent WBS and RA when appropriate. Three hundred forty-three patients were identified; of these 27 per cent had positive lymph nodes or metastatic disease at their initial operation. Two hundred thirteen (64%) patients underwent postoperative WBS with 174 (82%) requiring RA. One hundred thirty (36%) low-risk patients were followed with yearly Tg and PE that when abnormal led to WBS and RA. No additional patient morbidity or mortality resulted from this protocol. Factors identified during multivariate analyses as being predictive of occult metastasis and recurrence (P < 0.05) included tumor size and lymph node status. These data support a selective approach to the postoperative surveillance of DTC using Tg and PE to monitor low-risk patients and WBS for those with a higher risk of recurrence.
Fluorine-Passivated Silicon Nanocrystals: Surface Chemistry Versus Quantum Confinement

Yeshi Ma,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1021/jp211177d

2012-01-01

Abstract:The technological importance of silicon nanocrystals (Si NCs) largely originates from their remarkable optical properties. However, the detailed mechanisms for the optical behavior of Si NCs remain controversial. The controversy mainly centers on the interplay between quantum confinement and surface chemistry. By using a model system of fluorine (F)-passivated Si NCs in the framework of density functional theory, we demonstrate how both quantum confinement and surface chemistry impact the optical properties of Si NCs with sizes (diameters) < 2 nm. It is found that the effect of surface chemistry on both the excitation energy and emission energy of a Si NC becomes more significant as F coverage at the NC surface increases. For a Si NC whose size changes from 1.7 to 1.4 nm at both ground state and excited state, high F coverage (>50%) increasingly enables the effect of surface chemistry to prevail over that of quantum confinement. For a very small Si NC (<1.4 nm) at ground state, however, the quantum confinement effect is dominant no matter how large F coverage is. At the excited state, F coverage actually helps to confine excitons inside the very small Si NC. We show that medium F coverage leads to enhanced radiative recombination for Si NCs in most cases. But, 100% F coverage weakens the radiative recombination of Si NCs. The current work urges that surface chemistry must be taken into account together with quantum confinement in the analysis of the optical behavior of Si NCs.
Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Lingbo Xu,Si Li,Lu Jin,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1186/1556-276x-9-489

2014-01-01

Nanoscale Research Letters

Abstract:The temperature dependence of sensitized Er3+ emission via localized states and silicon nanoclusters has been studied to get an insight into the excitation and de-excitation processes in silicon-rich oxynitride films. The thermal quenching of Er3+ luminescence is elucidated by terms of decay time and effective excitation cross section. The temperature quenching of Er3+ decay time demonstrates the presence of non-radiative trap states, whose density and energy gap between Er3+ (4) I (13/2) excited levels are reduced by high-temperature annealing. The effective excitation cross section initially increases and eventually decreases with temperature, indicating that the energy transfer process is phonon assisted in both samples.
Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

S. Oda,S. Y. Huang,M. A. Salem,D. Hippo,H. Mizuta

DOI: https://doi.org/10.1016/j.physe.2006.12.049

2007-01-01

Abstract:Monodispersed silicon nanocrystals show novel electrical and optical characteristics of silicon quantum dots, such as single-electron tunneling, ballistic electron transport, visible photoluminescence and high-efficiency electron emission. Single-electron memory effects have been studied using a short-channel MOSFET incorporating Si quantum dots as a floating gate. Surface nitridation of Si nanocrystal memory nodes extends the charge-retention time significantly. Single-electron storage in individual Si dots has been evaluated by Kelvin probe force microscopy.Photoluminescence and electron emission are observed for surface-oxidized silicon nanocrystals. Efficiency of the no-phonon-assisted transition increases with decreasing core Si size. Electron emission efficiency as high as 5% has been achieved for the Si-nanocrystal-based cold electron emitter devices. The non-Maxwellian energy distribution of emitted electrons suggests that the mechanism of electron emission is due to ballistic transport through arrays of surface-oxidized Si nanocrystals. Combined with the ballistic electron emission, the quasi-direct light emission properties can be used for developing Si-based lasers. (C) 2007 Elsevier B.V. All rights reserved.
Size-dependent multiexciton dynamics governs scintillation from perovskite quantum dots

Andrea Fratelli,Matteo L. Zaffalon,Emanuele Mazzola,Dmitry Dirin,Ihor Cherniukh,Clara Otero Martinez,Matteo Salomoni,Francesco Carulli,Francesco Meinardi,Luca Gironi,Liberato Manna,Maksym V. Kovalenko,Sergio Brovelli

2024-09-25

Abstract:The recent emergence of quantum confined nanomaterials in the field of radiation detection, in particular lead halide perovskite nanocrystals, offers potentially revolutionary scalability and performance advantages over conventional materials. This development raises fundamental questions about the mechanism of scintillation itself at the nanoscale and the role of particle size, arguably the most defining parameter of quantum dots. Understanding this is crucial for the design and optimisation of future nanotechnology scintillators. In this work, we address these open questions by theoretically and experimentally studying the size-dependent scintillation of CsPbBr3 nanocrystals using a combination of Monte Carlo simulations, spectroscopic, and radiometric techniques. The results reveal and unravel a complex parametric space where the fine balance between the simultaneous effects of size-dependent energy deposition, (multi-)exciton population, and light emission under ionizing excitation, typical of confined particles, combine to maximize the scintillation efficiency and time performance of larger nanocrystals due to greater stopping power and reduced Auger decay. The remarkable agreement between theory and experiment produces a fully validated descriptive model that unprecedentedly predicts the scintillation yield and kinetics of nanocrystals without free parameters, providing the first fundamental guide for the rational design of nanoscale scintillators.

Applied Physics,Mesoscale and Nanoscale Physics
Size-Dependent Electroluminescence From Si Quantum Dots Embedded In Amorphous Sic Matrix

Yunjun Rui,Shuxin Li,Jun Xu,Chao Song,Xiaofan Jiang,Wei Li,Kunji Chen,Qimin Wang,Yuhua Zuo

DOI: https://doi.org/10.1063/1.3641989

IF: 2.877

2011-01-01

Journal of Applied Physics

Abstract:Si quantum dots (QDs) were formed by thermal annealing the hydrogenated amorphous silicon carbide films (a-SiCx:H) with different C/Si ratio x, which were controlled by using a different gas ratio R of methane to silane during the deposition process. By adjusting x and post annealing temperature, the QD size can be changed from 1.4 to 4.2 nm accordingly, which was verified by the Raman spectra and transmission electron microscopy images. Size-dependent electroluminescence (EL) was observed, and the EL intensity was higher for the sample containing small-sized Si QDs due to the quantum confinement effect (QCE). The EL peak energy as a function of the Si QDs size was in good agreement with a modified effective mass approximation (EMA) model. The calculated finite barrier potential of the Si QDs embedded in SiC matrix is 0.4 and 0.8 eV for conduction and valence band, respectively. Moreover, the current-voltage properties and the linear relationship between the integrated EL intensity and injection current indicate that the carrier transport is dominated by Fowler-Nordheim tunneling and the EL mechanism is originated from the bipolar recombination of electron-hole pairs at Si QDs. Our results demonstrate Si QDs embedded in amorphous SiC matrix has the potential application in Si-based light emitting devices and the third-generation solar cells. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641989]
Nonlocal Interaction Enhanced Biexciton Emission in Large CsPbBr3 Nanocrystals

Peng Huang,Shipei Sun,Hairui Lei,Yongyou Zhang,Haiyan Qin,Haizheng Zhong

DOI: https://doi.org/10.1186/s43593-023-00045-3

2023-01-01

eLight

Abstract:Biexciton emission in quantum dots is an efficient way to generate entangled photon pairs, which are key resources in quantum informatics. Compared with epitaxial grown quantum dots, chemically synthesized colloidal quantum dots show advantages of tunable wavelength and easy integration to realize quantum light sources. However, biexciton efficiency of colloidal quantum dots has been limited by Auger recombination. In this paper, we reported nonlocal interaction enhanced biexciton emission with efficiency up to 80% in large perovskite nanocrystals (> 20 nm). The nonlocal interaction between carriers and excitons leads to the abnormal exponential decrease of Auger recombination with volume in large nanocrystals, which distinguishes with the linear scaling in small counterparts. Such an exponential decrease of Auger recombination results in long lifetime of biexcitons, responsible for the required high biexciton efficiency. The discovery of nonlocal effects in large semiconductor nanocrystals provides new strategies to achieve high efficiency multiple excitons for quantum optics and energy conversation applications.
Silicon Nanocrystals: Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals (advanced Optical Materials 5/2016)

Zhenyi Ni,Xiaodong Pi,Shu Zhou,Tomohiro Nozaki,Bruno Grandidier,Deren Yang

DOI: https://doi.org/10.1002/adom.201670025

IF: 9

2016-01-01

Advanced Optical Materials

Abstract:On page 700, size-dependent optical absorption of boron-hyperdoped silicon nanocrystals (NCs) is investigated by X. D. Pi, D. Yang, and co-workers. For small NC sizes, the quantum confinement effect and the dielectric constant of Si NCs can cause a blue shift of the infrared absorption. This blue shift is induced by the localized surface plasmon resonance (LSPR) of Si NCs. For extremely small NC sizes, the significant scattering of free carriers at the NC surface can completely damp the LSPR.

Wolff-Parkinson-White syndrome in the neonate.

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Quantum size effects and tunable visible photoluminescence in a-Si:H/nc-Si:H superlattices

Mechanism for the Correlated Swinging of Photoluminescence Intensity and Peak Energy Shift with Sizes of Nanoscale Si Particles

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

High Luminescence in Small Si/SiO2 Nanocrystals: A Theoretical Study

Theory on the Quantum Confinement Luminescence Center Model for Nanocrystalline and Porous Si

Quantum Size-Dependent Luminescence and Nonlinear Optical Properties of Silicon Quantum Dots/sio2 Multilayer

The Role of Silicon Oxide Layers in Luminescence of Ensembles of Silicon Quantum Dots

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Postoperative Surveillance of Differentiated Thyroid Carcinoma: A Selective Approach

Fluorine-Passivated Silicon Nanocrystals: Surface Chemistry Versus Quantum Confinement

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Size-dependent multiexciton dynamics governs scintillation from perovskite quantum dots

Size-Dependent Electroluminescence From Si Quantum Dots Embedded In Amorphous Sic Matrix

Nonlocal Interaction Enhanced Biexciton Emission in Large CsPbBr3 Nanocrystals

Silicon Nanocrystals: Size‐Dependent Structures and Optical Absorption of Boron‐Hyperdoped Silicon Nanocrystals (advanced Optical Materials 5/2016)