Abstract: Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence lifetime remain unresolved, especially about whether silicon nanocrystals (Si NCs) can realize fast direct-bandgap-like optical transitions. Here, using ground-state and excited-state density functional theory (DFT), we obtained intrinsic phonon-free optical transitions at sizes from Si22 to Si705, showing that very small Si NCs can realize a strong direct optical transition. Orbital labeling results show that this rapid transition does not come from the {\Gamma}-{\Gamma} -like transition, contrary to the conclusions from the effective mass approximation (EMA) and that {\Gamma}-X mixing leads to a quasi-direct bandgap. This anomalous transition is particularly intense with decreasing size (or enhancement of quantum confinement). By investigating electron and hole distributions generated in the optical transition, localized state-induced enhanced emission (LIEE) in Si NCs was proposed. Quantum confinement (QC) distorts the excited-state electron spatial distribution by localizing Bloch waves into the NC core, resulting in increased hole and electron overlap, thus inducing a fast optical process. This work resolves important debates and proposes LIEE to explain the anomalous luminescence--a phase transition from weak (or none) luminescent state to strong optical transition, which will aid attempts at realizing high-radiative-rate NCs materials and application-level Si lasers.

Switching-on quantum size effects in silicon nanocrystals

Size-Dependent Optical Absorption of Silicon Nanocrystals Embedded in Sio2/Si3n4 Hybrid Matrix

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Quantum size effects and tunable visible photoluminescence in a-Si:H/nc-Si:H superlattices

Mechanism for the Correlated Swinging of Photoluminescence Intensity and Peak Energy Shift with Sizes of Nanoscale Si Particles

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

High Luminescence in Small Si/SiO2 Nanocrystals: A Theoretical Study

Theory on the Quantum Confinement Luminescence Center Model for Nanocrystalline and Porous Si

Breakdown Point of Quantum Confinement Photoluminescence and Space-Separation Dependent Energy Transfer from Silicon Nanocrystals

Quantum Size-Dependent Luminescence and Nonlinear Optical Properties of Silicon Quantum Dots/sio2 Multilayer

The Role of Silicon Oxide Layers in Luminescence of Ensembles of Silicon Quantum Dots

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Tuning Photoresponse Through Size Distribution Control of Silicon Quantum Dots

Dominant luminescence is not due to quantum confinement in molecular-sized silicon carbide nanocrystals

Fluorine-Passivated Silicon Nanocrystals: Surface Chemistry Versus Quantum Confinement

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Charge Storage and Electron/light Emission Properties of Silicon Nanocrystals

Size-dependent multiexciton dynamics governs scintillation from perovskite quantum dots

Growth of nearly one nanometer large silicon particles in silicon carbide and their quantum-confined photoluminescence features