Abstract:A facile yet effective method is reported to prepare large‐area (centimeter‐scale), non‐close‐packed, orientation‐tunable AuNR@PS superlattice arrays through the combination of rapid liquid–liquid interfacial assembly and electric field‐assisted orientation strategy. The AuNR@PS arrays are employed as the nano‐floating gate of the field‐effect transistor memory device, tunable charge trapping, and retention characteristics in the device can be realized. In this work, it is reported that large‐area (centimeter‐scale) arrays of non‐close‐packed polystyrene‐tethered gold nanorod (AuNR@PS) can be prepared through a liquid–liquid interfacial assembly method. Most importantly, the orientation of AuNRs in the arrays can be controlled by changing the intensity and direction of electric field applied in the solvent annealing process. The interparticle distance of AuNR can be tuned by varying the length of polymer ligands. Moreover, the AuNR@PS with short PS ligand are favorited to form orientated arrays with the assistance of electric field, while long PS ligands make the orientation of AuNRs difficult. The orientated AuNR@PS arrays are employed as the nano‐floating gate of field‐effect transistor memory device. Tunable charge trapping and retention characteristics in the device can be realized by electrical pulse with visible light illumination. The memory device with orientated AuNR@PS array required less illumination time (1 s) at the same onset voltage in programming operation, compared to the control device with disordered AuNR@PS array (illumination time: 3 s). Moreover, the orientated AuNR@PS array‐based memory device can maintain the stored data for more than 9000 s, and exhibits stable endurance characteristic without significant degradation in 50 programming/reading/erasing/reading cycles.

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