Abstract:Studying the surface states of Bi2Se3 and Bi2Te3 topological insulators has proven challenging due to the high bulk carrier density that masks the surface states. Ternary compound Bi-2(SexTe1-x)(3) may present a solution to the current materials challenge by lowering the bulk carrier mobility significantly. Here, we synthesized Bi-2(SexTe1-x)(3) nanoribbons and nanoplates via vapor-liquid-solid and vapor-solid growth methods where the atomic ratio x was controlled by the molecular ratio of Bi2Se3 to Bi2Te3 in the source mixture and ranged between 0 and 1. For the whole range of x, the ternary nanostructures are single crystalline without phase segregation, and their carrier densities decrease with x. However, the lowest electron density is still high (similar to 10(19) cm(-3)) and the mobility low, suggesting that the majority of these carriers may come from impurity states. Despite the high carrier density, weak antilocalization (WAL) is clearly observed. Angle-dependent magnetoconductance study shows that an appropriate magnetic field range is critical to capture a true, two-dimensional (2D) WAL effect, and a fit to the 2D localization theory gives alpha of -0.97, suggesting its origin may be the topological surface states. The power law dependence of the dephasing length on temperature is similar to T-0.49 within the appropriate field range (similar to 0.3 T), again reflecting the 2D nature of the WAL. Careful analysis on WAL shows how the surface states and the bulk/impurity states may interact with each other.

Evidence of anisotropic three-dimensional weak-localization in TiSe$_{2}$ nanoflakes

Emerging Weak Localization Effects on A Topological Insulator-Insulating Ferromagnet (Bi2se3-Eus) Interface

Weak Localization Effects As Evidence for Bulk Quantization in Bi 2 Se 3 Thin Films

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators

Weak antilocalization in Bi2(Se(x)Te(1-x))3 nanoribbons and nanoplates.

Anomalous anisotropic magnetoresistance in topological insulator films

Transport Evidence for the Three-Dimensional Dirac Semimetal Phase Inzrte5

Crossover Between Weak Antilocalization and Weak Localization of Bulk States in Ultrathin Bi2Se3 Films

Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films

Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires

Large Negative Magnetoresistance Induced by Anionic Solid Solutions in Two-Dimensional Spin-Frustrated Transition Metal Chalcogenides.

Effects of magnetic doping on weak antilocalization in narrow Bi2Se3 nanoribbons.

Weak localization and anti-localization in rare earth doped topological insulators

Indication of novel magnetoresistance mechanism in (Bi,Sb)$_2$(Te,Se)$_3$ 3D topological insulator thin films

Crossover Between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator

Linear Positive and Negative Magnetoresistance in Topological Insulator Bi2Se3 Flakes

Weak Antilocalization in Cd3as2 Thin Films

Half-Metallic Behavior in 2d Transition Metal Dichalcogenides Nanosheets by Dual-Native-Defects Engineering

Magnetic Moments Induced by Atomic Vacancies in Transition Metal Dichalcogenide Flakes

Unconventional localization of electrons inside of a nematic electronic phase

Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2