Abstract:Quantitative diffraction contrast analysis with defined diffraction vectors is a well-established method in TEM for studying defects in crystalline materials. A comparable transmission technique is however not available in the more widely used SEM platforms. In this work, we transfer the aperture-based dark-field imaging method from the TEM to the SEM, thus enabling quantitative diffraction contrast studies at lower voltages in SEM. This is achieved in STEM mode by inserting a custom-made aperture between the sample and the STEM detector and centering the hole on a desired reflection. To select individual reflections for dark-field imaging, we use our Low Energy Nanodiffraction (LEND) setup [Schweizer et al., Ultramicroscopy 213, 112956 (2020)], which captures transmission diffraction patterns from a fluorescent screen positioned below the sample. The aperture-based dark-field STEM method is particularly useful for studying extended defects in 2D materials, where (i) stronger diffraction at the lower voltages used in SEM is advantageous, but (ii) two-beam conditions cannot be established, making quantitative diffraction contrast analysis with standard bright-field and annular dark-field detectors impossible. We demonstrate the method by studying basal plane dislocations in bilayer graphene, which have attracted considerable research interest due to their exceptional structural and electronic properties. Direct comparison of results obtained on identical dislocations by the established TEM method and by the new aperture-based dark-field STEM method in SEM shows that a reliable Burgers vector analysis is possible by applying the well-known g·b=0 invisibility criterion. We further use the LEND setup to acquire 4D-STEM data and show that the virtual dark-field images match well with those in aperture-based dark-field STEM images for reliable Burgers vector analysis.

Measuring the Burgers Vector of Dislocations with Dark-Field X-ray Microscopy

Computing virtual dark-field X-ray microscopy images of complex discrete dislocation structures from large-scale molecular dynamics simulations

Automating Dislocation Characterization in 3D Dark Field X-ray Microscopy

A method to identify dislocations in a known crystal structure by transmission electron microscopy

Formalism to Image the Dynamics of Coherent and Incoherent Phonon with Dark-Field X-ray Microscopy using Kinematic Diffraction Theory

Characterization of extended defects in 2D materials using aperture-based dark-field STEM in SEM

Computation of Burgers vectors from elastic strain and lattice rotation data

Simulations of dislocation contrast in dark‐field X‐ray microscopy

Study on Burgers Vector of Dislocations in KDP (010) Faces and Screw Dislocation Growth Mechanism of (101) Faces.

Caution in building a Burgers circuit for studying secondary dislocations

Fundamental and experimental aspects of diffraction for characterizing dislocations by electron channeling contrast imaging in scanning electron microscope

Characterizing interface dislocations by atomically informed Frank-Bilby theory

Measurements of Stress Fields Near a Grain Boundary: Exploring Blocked Arrays of Dislocations in 3D

Three-Dimensional Reconstruction of Planar Deformation Features from Single Electron Micrographs

A coherent way to image dislocations

On the Determination of Burgers Vectors of Type-B Dislocations in an Al70co15ni15 Decagonal Quasi-Crystal by Convergent-Beam Electron-Diffraction

Multiple scattering simulation of electron channelling contrast images of dislocations at interfaces

Electron Tomography of Dislocations in an Al-Cu-Mg Alloy

3D reconstruction of the spatial distribution of dislocation loops using a triangulation approach

Nano-scale imaging of the full strain tensor of specific dislocations extracted from a bulk sample