Abstract:Quantitative diffraction contrast analysis with defined diffraction vectors is a well-established method in TEM for studying defects in crystalline materials. A comparable transmission technique is however not available in the more widely used SEM platforms. In this work, we transfer the aperture-based dark-field imaging method from the TEM to the SEM, thus enabling quantitative diffraction contrast studies at lower voltages in SEM. This is achieved in STEM mode by inserting a custom-made aperture between the sample and the STEM detector and centering the hole on a desired reflection. To select individual reflections for dark-field imaging, we use our Low Energy Nanodiffraction (LEND) setup [Schweizer et al., Ultramicroscopy 213, 112956 (2020)], which captures transmission diffraction patterns from a fluorescent screen positioned below the sample. The aperture-based dark-field STEM method is particularly useful for studying extended defects in 2D materials, where (i) stronger diffraction at the lower voltages used in SEM is advantageous, but (ii) two-beam conditions cannot be established, making quantitative diffraction contrast analysis with standard bright-field and annular dark-field detectors impossible. We demonstrate the method by studying basal plane dislocations in bilayer graphene, which have attracted considerable research interest due to their exceptional structural and electronic properties. Direct comparison of results obtained on identical dislocations by the established TEM method and by the new aperture-based dark-field STEM method in SEM shows that a reliable Burgers vector analysis is possible by applying the well-known g·b=0 invisibility criterion. We further use the LEND setup to acquire 4D-STEM data and show that the virtual dark-field images match well with those in aperture-based dark-field STEM images for reliable Burgers vector analysis.

A method to identify dislocations in a known crystal structure by transmission electron microscopy

Measuring the Burgers Vector of Dislocations with Dark-Field X-ray Microscopy

Identification of Dislocations on Crystal Surfaces

TEM-based dislocation tomography: Challenges and opportunities

Computation of Burgers vectors from elastic strain and lattice rotation data

Caution in building a Burgers circuit for studying secondary dislocations

3D reconstruction of the spatial distribution of dislocation loops using a triangulation approach

Instance Segmentation of Dislocations in TEM Images

Study on the Perfect Dislocation in Cd0.9Zn0.1Te Single Crystals by HRTEM

Analysis of crystal defects by scanning transmission electron microscopy (STEM) in a modern scanning electron microscope

Electron Tomography of Dislocations in an Al-Cu-Mg Alloy

Characterization of extended defects in 2D materials using aperture-based dark-field STEM in SEM

On the Determination of Burgers Vectors of Type-B Dislocations in an Al70co15ni15 Decagonal Quasi-Crystal by Convergent-Beam Electron-Diffraction

How to Identify Dislocations in Molecular Dynamics Simulations?

Three-Dimensional Reconstruction of Planar Deformation Features from Single Electron Micrographs

Detection of dislocation motion in atomistic simulations of nanocrystalline materials

Automated detection and mapping of crystal tilt using thermal diffuse scattering in transmission electron microscopy

Dislocation Network on the Curved End Face of Α Precipitates in a Ti-8 Wt.% Fe Alloy

Elastic strain mapping of plastically deformed materials by TEM

Dislocation structures. Part II. Slip system dependence